| Review of polymorphous Ga2O3 materials and their solar-blind photodetector applications X Hou, Y Zou, M Ding, Y Qin, Z Zhang, X Ma, P Tan, S Yu, X Zhou, X Zhao, ... Journal of Physics D: Applied Physics 54 (4), 043001, 2020 | 159 | 2020 |
| Source-Field-Plated -Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2 Y Lv, X Zhou, S Long, X Song, Y Wang, S Liang, Z He, T Han, X Tan, ... IEEE Electron Device Letters 40 (1), 83-86, 2018 | 151 | 2018 |
| Low defect density and small I− V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2 W Hao, Q He, K Zhou, G Xu, W Xiong, X Zhou, G Jian, C Chen, X Zhao, ... Applied Physics Letters 118 (4), 2021 | 137 | 2021 |
| Enhancement-Mode -Ga2O3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio Y Qin, H Dong, S Long, Q He, G Jian, Y Zhang, X Zhou, Y Yu, X Hou, ... IEEE Electron Device Letters 40 (5), 742-745, 2019 | 65 | 2019 |
| Enhancement‐Mode β‐Ga2O3 Metal‐Oxide‐Semiconductor Field‐Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing Y Lv, X Zhou, S Long, Y Wang, X Song, X Zhou, G Xu, S Liang, Z Feng, ... physica status solidi (RRL)–Rapid Research Letters 14 (3), 1900586, 2020 | 57 | 2020 |
| Fast Switching -Ga2O3 Power MOSFET With a Trench-Gate Structure H Dong, S Long, H Sun, X Zhao, Q He, Y Qin, G Jian, X Zhou, Y Yu, ... IEEE Electron Device Letters 40 (9), 1385-1388, 2019 | 55 | 2019 |
| Realizing high-performance β-Ga₂O₃ MOSFET by using variation of lateral doping: a TCAD study X Zhou, Q Liu, G Xu, K Zhou, X Xiang, Q He, W Hao, G Jian, X Zhao, ... IEEE Transactions on Electron Devices 68 (4), 1501-1506, 2021 | 50 | 2021 |
| Over 1 GW/cm2 Vertical Ga2O3 Schottky Barrier Diodes Without Edge Termination Q He, W Hao, X Zhou, Y Li, K Zhou, C Chen, W Xiong, G Jian, G Xu, ... IEEE Electron Device Letters 43 (2), 264-267, 2021 | 49 | 2021 |
| Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current W Xiong, X Zhou, G Xu, Q He, G Jian, C Chen, Y Yu, W Hao, X Xiang, ... IEEE Electron Device Letters 42 (3), 430-433, 2021 | 45 | 2021 |
| Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing X Zhou, Y Ma, G Xu, Q Liu, J Liu, Q He, X Zhao, S Long Applied Physics Letters 121 (22), 2022 | 41 | 2022 |
| Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension W Hao, F Wu, W Li, G Xu, X Xie, K Zhou, W Guo, X Zhou, Q He, X Zhao, ... IEEE Transactions on Electron Devices 70 (4), 2129-2134, 2023 | 37 | 2023 |
| Selective high-resistance zones formed by oxygen annealing for-GaO Schottky diode applications Q He, X Zhou, Q Li, W Hao, Q Liu, Z Han, K Zhou, C Chen, J Peng, G Xu, ... IEEE Electron Device Letters 43 (11), 1933-1936, 2022 | 35 | 2022 |
| 2.6 kV NiO/Ga2O3 Heterojunction Diode with Superior High-Temperature Voltage Blocking Capability W Hao, Q He, X Zhou, X Zhao, G Xu, S Long 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 34 | 2022 |
| High-Performance β-Ga2O3 Solar-Blind Photodetector With Extremely Low Working Voltage C Chen, X Zhao, X Hou, S Yu, R Chen, X Zhou, P Tan, Q Liu, W Mu, Z Jia, ... IEEE Electron Device Letters 42 (10), 1492-1495, 2021 | 34 | 2021 |
| Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2 Y Lv, X Zhou, S Long, S Liang, X Song, X Zhou, H Dong, Y Wang, Z Feng, ... Semiconductor Science and Technology 34 (11), 11LT02, 2019 | 32 | 2019 |
| Normally-off β-Ga2O3 Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate X Zhou, Q Liu, W Hao, G Xu, S Long 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 26 | 2022 |
| High-Performance Vertical β-Ga2 O3 Schottky Barrier Diodes Featuring P-NiO JTE with Adjustable Conductivity W Hao, F Wu, W Li, G Xu, X Xie, K Zhou, W Guo, X Zhou, Q He, X Zhao, ... 2022 International Electron Devices Meeting (IEDM), 9.5. 1-9.5. 4, 2022 | 25 | 2022 |
| 702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation Y Ma, X Zhou, W Tang, X Zhang, G Xu, L Zhang, T Chen, S Dai, C Bian, ... IEEE Electron Device Letters 44 (3), 384-387, 2023 | 24 | 2023 |
| 2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination Z Han, G Jian, X Zhou, Q He, W Hao, J Liu, B Li, H Huang, Q Li, X Zhao, ... IEEE Electron Device Letters, 2023 | 21 | 2023 |
| Superior Performance β-Ga2O3 Junction Barrier Schottky Diodes Implementing p-NiO Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton … F Wu, Y Wang, G Jian, G Xu, X Zhou, W Guo, J Du, Q Liu, S Dun, Z Yu, ... IEEE Transactions on Electron Devices 70 (3), 1199-1205, 2023 | 21 | 2023 |
