| Fabrication of a Cu‐cone‐shaped cation source inserted conductive bridge random access memory and its improved switching reliability HJ Kim, TH Park, KJ Yoon, WM Seong, JW Jeon, YJ Kwon, Y Kim, ... Advanced Functional Materials 29 (8), 1806278, 2019 | 67 | 2019 |
| Time-varying data processing with nonvolatile memristor-based temporal kernel YH Jang, W Kim, J Kim, KS Woo, HJ Lee, JW Jeon, SK Shim, J Han, ... Nature communications 12 (1), 5727, 2021 | 64 | 2021 |
| Atomic layer deposition of chalcogenides for next-generation phase change memory YK Lee, C Yoo, W Kim, JW Jeon, CS Hwang Journal of Materials Chemistry C 9 (11), 3708-3725, 2021 | 36 | 2021 |
| Atomic Layer Deposition of GexSe1–x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage C Yoo, W Kim, JW Jeon, ES Park, M Ha, YK Lee, CS Hwang ACS applied materials & interfaces 12 (20), 23110-23118, 2020 | 30 | 2020 |
| Atomic layer deposition of GeSe films using HGeCl3 and [(CH3) 3Si] 2Se with the discrete feeding method for the ovonic threshold switch W Kim, S Yoo, C Yoo, ES Park, J Jeon, YJ Kwon, KS Woo, HJ Kim, ... Nanotechnology 29 (36), 365202, 2018 | 27 | 2018 |
| Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory ES Park, C Yoo, W Kim, M Ha, JW Jeon, T Eom, YK Lee, CS Hwang Chemistry of Materials 31 (21), 8752-8763, 2019 | 23 | 2019 |
| Matrix mapping on crossbar memory arrays with resistive interconnects and its use in in-memory compression of biosignals YK Lee, JW Jeon, ES Park, C Yoo, W Kim, M Ha, CS Hwang Micromachines 10 (5), 306, 2019 | 20 | 2019 |
| Electroforming-free bipolar resistive switching in GeSe thin films with a Ti-containing electrode W Kim, C Yoo, ES Park, M Ha, JW Jeon, GS Kim, KS Woo, YK Lee, ... ACS applied materials & interfaces 11 (42), 38910-38920, 2019 | 19 | 2019 |
| Developing precursor chemistry for atomic layer deposition of high-density, conformal GeTe films for phase-change memory ES Park, C Yoo, W Kim, M Ha, JW Jeon, YK Lee, CS Hwang Chemistry of Materials 31 (21), 8663-8672, 2019 | 19 | 2019 |
| Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory C Yoo, JW Jeon, S Yoon, Y Cheng, G Han, W Choi, B Park, G Jeon, ... Advanced Materials 34 (50), 2207143, 2022 | 18 | 2022 |
| Kernel application of the stacked crossbar array composed of self‐rectifying resistive switching memory for convolutional neural networks Y Kim, J Kim, SS Kim, YJ Kwon, GS Kim, JW Jeon, DE Kwon, JH Yoon, ... Advanced Intelligent Systems 2 (2), 1900116, 2020 | 15 | 2020 |
| Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Coinjection YK Lee, ES Park, C Yoo, W Kim, JW Jeon, M Ha, CS Hwang Crystal Growth & Design 20 (7), 4649-4656, 2020 | 6 | 2020 |
| Fully CMOS‐Based p‐Bits with a Bistable Resistor for Probabilistic Computing J Kim, JK Han, HY Maeng, J Han, JW Jeon, YH Jang, KS Woo, YK Choi, ... Advanced Functional Materials, 2307935, 2024 | 5 | 2024 |
| Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks JW Jeon, B Park, YH Jang, SH Lee, S Jeon, J Han, SK Ryoo, KD Kim, ... ACS Applied Materials & Interfaces 16 (12), 15032-15042, 2024 | 3 | 2024 |
| Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor W Choi, G Kim, HY Kim, C Yoo, JW Jeon, B Park, G Jeon, S Jeon, S Kang, ... ACS Applied Electronic Materials 5 (3), 1721-1729, 2023 | 3 | 2023 |
| Atomic layer deposition of SnSe x thin films using Sn (N (CH 3) 2) 4 and Se (Si (CH 3) 3) 2 with NH 3 co-injection JW Jeon, C Yoo, W Kim, W Choi, B Park, YK Lee, CS Hwang Dalton Transactions 51 (2), 594-601, 2022 | 3 | 2022 |
| A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory C Yoo, JW Jeon, B Park, W Choi, G Jeon, S Jeon, S Kim, CS Hwang ACS Applied Electronic Materials 5 (11), 5794-5808, 2023 | 1 | 2023 |
| 2Memristor‐1Capacitor Integrated Temporal Kernel for High‐Dimensional Data Mapping SK Shim, YH Jang, J Han, JW Jeon, DH Shin, YR Kim, JK Han, KS Woo, ... Small, 2306585, 2024 | | 2024 |
| Atomic Layer Deposition of Sn-doped Germanium Diselenide for As-free Ovonic Threshold Switch with Low Off-current B Park, JW Jeon, W Kim, W Choi, G Jeon, S Jeon, S Kim, C Yoo, J Lim, ... Dalton Transactions, 2024 | | 2024 |
| Fabrication of Ultrathin Ferroelectric Al0.7Sc0.3N Films under Complementary‐Metal‐Oxide‐Semiconductor Compatible Conditions by using HfN0.4 Electrode SK Ryoo, KD Kim, W Choi, P Sriboriboon, S Heo, H Seo, YH Jang, ... Advanced Materials, 2413295, 2024 | | 2024 |
