| Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses IG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 775 | 2004 |
| Electrical observations of filamentary conductions for the resistive memory switching in NiO films DC Kim, S Seo, SE Ahn, DS Suh, MJ Lee, BH Park, IK Yoo, IG Baek, ... Applied physics letters 88 (20), 2006 | 681 | 2006 |
| A novel cell technology using N-doped GeSbTe films for phase change RAM H Horii, JH Yi, JH Park, YH Ha, IG Baek, SO Park, YN Hwang, SH Lee, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 442 | 2003 |
| Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application IG Baek, DC Kim, MJ Lee, HJ Kim, EK Yim, MS Lee, JE Lee, SE Ahn, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 333 | 2005 |
| Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier JS Bae, J Lee, HJ Kim, IG Baek, Y Ha US Patent 7,352,021, 2008 | 322 | 2008 |
| 2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications MJ Lee, Y Park, BS Kang, SE Ahn, C Lee, K Kim, W Xianyu, G Stefanovich, ... 2007 IEEE International Electron Devices Meeting, 771-774, 2007 | 278 | 2007 |
| A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ... Advanced Materials 19 (1), 73-76, 2007 | 276 | 2007 |
| Improvement of resistive memory switching in NiO using IrO2 DC Kim, MJ Lee, SE Ahn, S Seo, JC Park, IK Yoo, IG Baek, HJ Kim, ... Applied physics letters 88 (23), 2006 | 247 | 2006 |
| Write current reduction in transition metal oxide based resistance-change memory SE Ahn, MJ Lee, Y Park, BS Kang, CB Lee, KH Kim, S Seo, DS Suh, ... Advanced materials 20 (5), 924-928, 2008 | 194 | 2008 |
| Realization of vertical resistive memory (VRRAM) using cost effective 3D process IG Baek, CJ Park, H Ju, DJ Seong, HS Ahn, JH Kim, MK Yang, SH Song, ... 2011 International Electron Devices Meeting, 31.8. 1-31.8. 4, 2011 | 187 | 2011 |
| Semiconductor devices and methods of driving the same JH Oh, KC Ryoo, B Park, K Oh, IG Baek US Patent 8,472,237, 2013 | 170 | 2013 |
| Semiconductor memory devices H Yu, HS Hwang, K Oh, IG Baek, K Jin-Hyoung US Patent 8,619,490, 2013 | 158 | 2013 |
| High-current-density CuOx/InZnOx thin-film diodes for cross-point memory applications BS Kang, SE Ahn, MJ Lee, G Stefanovich, KH Kim, WX Xianyu, CB Lee, ... Adv. Mater 20 (16), 3066-3069, 2008 | 147 | 2008 |
| Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same IG Baek, MS Lee US Patent 7,420,198, 2008 | 130 | 2008 |
| 23.6 Highly Scalable Non-volatile Resistive Memory Using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses IG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ... INTERNATIONAL ELECTRON DEVICES MEETING 1 (2004), 587-590, 2004 | 129 | 2004 |
| Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates MJ Lee, CB Lee, S Kim, H Yin, J Park, SE Ahn, BS Kang, KH Kim, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 123 | 2008 |
| Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same IG Baek, HS Hwang, H Yu, CW Park US Patent 8,553,445, 2013 | 106 | 2013 |
| Resistance-type random access memory device having three-dimensional bit line and word line patterning HS Yoon, I Baek, H Sim, JS Zhao, M Park US Patent 8,338,224, 2012 | 106 | 2012 |
| A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM) SG Park, MK Yang, H Ju, DJ Seong, JM Lee, E Kim, S Jung, L Zhang, ... 2012 International Electron Devices Meeting, 20.8. 1-20.8. 4, 2012 | 101 | 2012 |
| Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier JS Bae, J Lee, HJ Kim, IG Baek, Y Ha US Patent 7,351,594, 2008 | 101 | 2008 |
