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Aniruddhan Gowrisankar
Aniruddhan Gowrisankar
PhD scholar
在 iisc.ac.in 的电子邮件经过验证 - 首页
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Compensation dopant-free GaN-on-Si HEMTs with a polarization engineered buffer for RF applications
A Gowrisankar, VS Charan, H Chandrasekar, A Venugopalarao, ...
IEEE Transactions on Electron Devices 70 (4), 1622-1627, 2023
52023
Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor
A Venugopalarao, S Kanta, H Chandrasekar, A Gowrisankar, ...
physica status solidi (a), 2400050, 2024
2024
AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF Applications
A Gowrisankar, SC Vanjari, A Bardhan, A Venugopalarao, ...
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022
2022
Relaxation to equilibrium of quantized chaotic states
G ANIRUDDHAN
2017
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