| An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel Z Ji, X Zhang, J Franco, R Gao, M Duan, JF Zhang, WD Zhang, B Kaczer, ... IEEE Transactions on Electron Devices 62 (11), 3633-3639, 2015 | 31 | 2015 |
| A test-proven As-grown-Generation (AG) model for predicting NBTI under use-bias Z Ji, JF Zhang, L Lin, M Duan, W Zhang, X Zhang, R Gao, B Kaczer, ... 2015 Symposium on VLSI Technology (VLSI Technology), T36-T37, 2015 | 20 | 2015 |
| A single device based Voltage Step Stress (VSS) Technique for fast reliability screening Z Ji, JF Zhang, W Zhang, X Zhang, B Kaczer, S De Gendt, G Groeseneken, ... 2014 IEEE International Reliability Physics Symposium, GD. 2.1-GD. 2.4, 2014 | 12 | 2014 |
| CMOS-compatible MESFETs for high power RF integrated circuits P Mehr, S Moallemi, X Zhang, W Lepkowski, J Kitchen, TJ Thornton IEEE Transactions on Semiconductor Manufacturing 32 (1), 14-22, 2018 | 7 | 2018 |
| SOI MESFETs on high-resistivity, trap-rich substrates P Mehr, X Zhang, W Lepkowski, C Li, TJ Thornton Solid-State Electronics 142, 47-51, 2018 | 7 | 2018 |
| Self-Heating in 40 nm SOI MOSFETs on high resistivity, trap-rich substrates X Zhang, P Mehr, TJ Thornton IEEE Transactions on Nanotechnology 19, 42-46, 2019 | 4 | 2019 |
| Enhanced voltage silicon NFET-MESFET cascode amplifiers integrated on a 45nm SOI CMOS technology for RFIC applications: Topic/category: 3D and power technologies PH Mehr, W Lepkowski, X Zhang, S Moallemi, J Kitchen, TJ Thornton 2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC …, 2017 | 4 | 2017 |
| Measurements and simulation of self-heating in 40 nm SOI MOSFETs X Zhang, P Mehr, D Vasileska, T Thornton 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 3 | 2021 |
| Self-heating in SOI MOSFETs at the 45nm node X Zhang, P Mehr, D Vasileska, T Thornton 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2018 | 2 | 2018 |
| ESD characterization of planar InGaAs devices Z Ji, D Linten, R Boschke, G Hellings, SH Chen, A Alian, D Zhou, Y Mols, ... 2015 IEEE International Reliability Physics Symposium, 3F. 1.1-3F. 1.7, 2015 | 1 | 2015 |
| Understanding lifetime prediction methodology for In0.53Ga0.47As nFETs under Positive Bias Temperature Instability (PBTI) condition Z Ji, X Zhang, J Zhang 2019 IEEE 26th International Symposium on Physical and Failure Analysis of …, 2019 | | 2019 |
zhigang jiShanghai Jiaotong University在 sjtu.edu.cn 的电子邮件经过验证
