| Amorphous molybdenum sulfide catalysts for electrochemical hydrogen production: insights into the origin of their catalytic activity JD Benck, Z Chen, LY Kuritzky, AJ Forman, TF Jaramillo Acs Catalysis 2 (9), 1916-1923, 2012 | 1108 | 2012 |
| Light emitting diode with conformal surface electrical contacts with glass encapsulation JS Speck, CCA Weisbuch, N Pfaff, L Kuritzky, CL Keraly US Patent App. 13/623,472, 2013 | 244 | 2013 |
| Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN LY Kuritzky, JS Speck MRS Communications 5 (3), 463-473, 2015 | 88 | 2015 |
| Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells S Marcinkevičius, KM Kelchner, LY Kuritzky, S Nakamura, SP DenBaars, ... Applied Physics Letters 103 (11), 111107, 2013 | 58 | 2013 |
| Prospects for 100% wall-plug efficient III-nitride LEDs LY Kuritzky, C Weisbuch, JS Speck Optics Express 26 (13), 16600-16608, 2018 | 48 | 2018 |
| Chemical defense by the native winter ant (Prenolepis imparis) against the invasive Argentine ant (Linepithema humile) TR Sorrells, LY Kuritzky, PG Kauhanen, K Fitzgerald, SJ Sturgis, J Chen, ... PloS one 6 (4), e18717, 2011 | 42 | 2011 |
| High wall-plug efficiency blue III-nitride LEDs designed for low current density operation LY Kuritzky, AC Espenlaub, BP Yonkee, CD Pynn, SP DenBaars, ... Optics Express 25 (24), 30696-30707, 2017 | 38 | 2017 |
| Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates KM Kelchner, LY Kuritzky, K Fujito, S Nakamura, SP DenBaars, JS Speck Journal of Crystal Growth 382, 80-86, 2013 | 35 | 2013 |
| Efficient and Scalable GaInAs Thermophotovoltaic Devices EJ Tervo, RM France, DJ Friedman, MK Arulanandam, RR King, ... arXiv preprint arXiv:2207.00565, 2022 | 30 | 2022 |
| Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯ 1¯) III-nitride laser diodes with chemically assisted ion beam … DL Becerra, LY Kuritzky, J Nedy, AS Abbas, A Pourhashemi, RM Farrell, ... Applied Physics Letters 108 (9), 091106, 2016 | 28 | 2016 |
| World record demonstration of> 30% thermophotovoltaic conversion efficiency TC Narayan, LY Kuritzky, DP Nizamian, BA Johnson, EJ Tervo, AR Young, ... 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 1792-1795, 2020 | 27 | 2020 |
| Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN LY Kuritzky, DL Becerra, AS Abbas, J Nedy, S Nakamura, SP DenBaars, ... Semiconductor Science and Technology 31 (7), 075008, 2016 | 27 | 2016 |
| Stable vicinal step orientations in m-plane GaN KM Kelchner, LY Kuritzky, S Nakamura, SP DenBaars, JS Speck Journal of Crystal Growth 411, 56-62, 2015 | 25 | 2015 |
| Interwell carrier transport in InGaN/(In) GaN multiple quantum wells S Marcinkevičius, R Yapparov, LY Kuritzky, YR Wu, S Nakamura, ... Applied Physics Letters 114 (15), 151103, 2019 | 23 | 2019 |
| Light Extraction Efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs CL Keraly, L Kuritzky, M Cochet, C Weisbuch III-Nitride Based Light Emitting Diodes and Applications, 231-269, 2013 | 20 | 2013 |
| Polarization-resolved near-field spectroscopy of localized states in m-plane (In,Ga)N/GaN quantum wells DS Ivanov, S Marcinkevičius, MD Mensi, O Martinez, LY Kuritzky, ... Physical Review Applied 7, 064003, 2017 | 18 | 2017 |
| Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells R Ivanov, S Marcinkevičius, TK Uždavinys, LY Kuritzky, S Nakamura, ... Applied Physics Letters 110 (3), 031109, 2017 | 17 | 2017 |
| Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition DA Browne, MN Fireman, B Mazumder, LY Kuritzky, YR Wu, JS Speck Semiconductor Science and Technology 32 (2), 025010, 2017 | 15 | 2017 |
| Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates LY Kuritzky, DJ Myers, J Nedy, KM Kelchner, S Nakamura, SP DenBaars, ... Applied Physics Express 8 (6), 061002, 2015 | 14 | 2015 |
| Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations M Khoury, H Li, B Bonef, LY Kuritzky, AJ Mughal, S Nakamura, JS Speck, ... Applied Physics Express 11 (3), 036501, 2018 | 13 | 2018 |
Steven DenBaarsProfessor of Materials, University of California Santa Barbara在 engineering.ucsb.edu 的电子邮件经过验证
