| Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕ MgO∕ CoFeB pseudo-spin-valves annealed at high temperature S Ikeda, J Hayakawa, Y Ashizawa, YM Lee, K Miura, H Hasegawa, ... Applied Physics Letters 93 (8), 2008 | 1981 | 2008 |
| Magnetic tunnel junctions for spintronic memories and beyond S Ikeda, J Hayakawa, YM Lee, F Matsukura, Y Ohno, T Hanyu, H Ohno IEEE Transactions on Electron Devices 54 (5), 991-1002, 2007 | 646 | 2007 |
| Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier YM Lee, J Hayakawa, S Ikeda, F Matsukura, H Ohno Applied physics letters 90 (21), 2007 | 478 | 2007 |
| Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB∕ MgO∕ CoFeB magnetic tunnel junctions J Hayakawa, S Ikeda, YM Lee, F Matsukura, H Ohno Applied Physics Letters 89 (23), 2006 | 317 | 2006 |
| 2Mb spin-transfer torque RAM (SPRAM) with bit-by-bit bidirectional current write and parallelizing-direction current read T Kawahara, R Takemura, K Miura, J Hayakawa, S Ikeda, Y Lee, R Sasaki, ... 2007 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2007 | 311 | 2007 |
| 2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read T Kawahara, R Takemura, K Miura, J Hayakawa, S Ikeda, YM Lee, ... IEEE Journal of Solid-State Circuits 43 (1), 109-120, 2008 | 277 | 2008 |
| Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions J Hayakawa, S Ikeda, YM Lee, R Sasaki, T Meguro, F Matsukura, ... Japanese Journal of Applied Physics 44 (9L), L1267, 2005 | 271 | 2005 |
| Giant tunnel magnetoresistance and high annealing stability in CoFeB∕ MgO∕ CoFeB magnetic tunnel junctions with synthetic pinned layer YM Lee, J Hayakawa, S Ikeda, F Matsukura, H Ohno Applied Physics Letters 89 (4), 2006 | 251 | 2006 |
| Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer J Hayakawa, S Ikeda, YM Lee, R Sasaki, T Meguro, F Matsukura, ... Japanese journal of applied physics 45 (10L), L1057, 2006 | 190 | 2006 |
| Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering S Ikeda, J Hayakawa, YM Lee, R Sasaki, T Meguro, F Matsukura, H Ohno Japanese journal of applied physics 44 (11L), L1442, 2005 | 162 | 2005 |
| Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB-based synthetic ferrimagnetic free layers J Hayakawa, S Ikeda, K Miura, M Yamanouchi, YM Lee, R Sasaki, ... IEEE Transactions on Magnetics 44 (7), 1962-1967, 2008 | 121 | 2008 |
| Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe (B) and fcc-CoFe free layers S Ikeda, J Hayakawa, YM Lee, T Tanikawa, F Matsukura, H Ohno Journal of applied physics 99 (8), 2006 | 74 | 2006 |
| Magnetoresistive element, magnetic memory cell and magnetic random access memory using the same H Ohno, S Ikeda, YM Lee, J Hayakawa US Patent 8,274,818, 2012 | 62 | 2012 |
| A study of dielectric breakdown mechanism in CoFeB/MgO/CoFeB magnetic tunnel junction C Yoshida, M Kurasawa, YM Lee, K Tsunoda, M Aoki, Y Sugiyama 2009 IEEE International Reliability Physics Symposium, 139-142, 2009 | 60 | 2009 |
| Unipolar resistive switching in CoFeB∕ MgO∕ CoFeB magnetic tunnel junction C Yoshida, M Kurasawa, YM Lee, M Aoki, Y Sugiyama Applied Physics Letters 92 (11), 2008 | 41 | 2008 |
| Highly scalable STT-MRAM with MTJs of top-pinned structure in 1T/1MTJ cell YM Lee, C Yoshida, K Tsunoda, S Umehara, M Aoki, T Sugii 2010 Symposium on VLSI Technology, 49-50, 2010 | 35 | 2010 |
| Magnetoresistive element K Sawada, T Nagase, EEH Youngmin, K Ueda, D Watanabe, ... US Patent 9,184,374, 2015 | 26 | 2015 |
| Magnetoresistive memory device with different write pulse patterns T Kishi, T Inaba, D Watanabe, M Nakayama, N Ogata, T Masaru, ... US Patent 10,325,640, 2019 | 25 | 2019 |
| Tunnel magnetic resistance device, and magnetic memory cell and magnetic random access memory using the same J Hayakawa, H Ohno, S Ikeda, YM Lee US Patent 7,894,244, 2011 | 19 | 2011 |
| Magnetic memory and method of manufacturing the same M Nakayama, Y Sonoda, H Yoda, M Nagamine, M Yoshikawa, T Masaru, ... US Patent App. 14/201,263, 2015 | 18 | 2015 |
Shoji IkedaTohoku University在 cies.tohoku.ac.jp 的电子邮件经过验证
