Room Temperature Electrically Injected Polariton Laser P Bhattacharya, T Frost, S Deshpande, MZ Baten, A Hazari, A Das Physical Review Letters 112 (23), 236802, 2014 | 259 | 2014 |
Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon T Frost, S Jahangir, E Stark, S Deshpande, A Hazari, C Zhao, BS Ooi, ... Nano letters 14 (8), 4535-4541, 2014 | 173 | 2014 |
Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot S Deshpande, T Frost, A Hazari, P Bhattacharya Applied Physics Letters 105 (14), 141109, 2014 | 113 | 2014 |
An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ... Nanoscale 7 (40), 16658-16665, 2015 | 106 | 2015 |
InGaN/GaN Quantum Dot RedLaser T Frost, A Banerjee, K Sun, SL Chuang, P Bhattacharya IEEE Journal of Quantum Electronics 49 (11), 923-931, 2013 | 90 | 2013 |
High Performance InAs//InP Quantum Dot 1.55 Tunnel Injection Laser S Bhowmick, MZ Baten, T Frost, BS Ooi, P Bhattacharya IEEE Journal of Quantum Electronics 50 (1), 7-14, 2013 | 89 | 2013 |
Formation and Nature of InGaN Quantum Dots in GaN Nanowires S Deshpande, T Frost, L Yan, S Jahangir, A Hazari, X Liu, ... Nano letters 15 (3), 1647-1653, 2015 | 81 | 2015 |
Digital subcarrier multiplexing: enabling software-configurable optical networks D Welch, A Napoli, J Bäck, S Buggaveeti, C Castro, A Chase, X Chen, ... Journal of Lightwave Technology 41 (4), 1175-1191, 2022 | 63 | 2022 |
Room-Temperature Spin Polariton Diode Laser A Bhattacharya, MZ Baten, I Iorsh, T Frost, A Kavokin, P Bhattacharya Physical Review Letters 119 (6), 067701, 2017 | 43 | 2017 |
Small signal modulation characteristics of red-emitting (λ= 610 nm) III-nitride nanowire array lasers on (001) silicon S Jahangir, T Frost, A Hazari, L Yan, E Stark, T LaMountain, ... Applied Physics Letters 106 (7), 071108, 2015 | 39 | 2015 |
High performance red-emitting multiple layer InGaN/GaN quantum dot lasers T Frost, A Hazari, A Aiello, MZ Baten, L Yan, J Mirecki-Millunchick, ... Japanese Journal of Applied Physics 55 (3), 032101, 2016 | 37 | 2016 |
Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ= 420 nm) on c-plane GaN substrate A Banerjee, T Frost, E Stark, P Bhattacharya Applied Physics Letters 101 (4), 041108, 2012 | 37 | 2012 |
1.6 Tbps Coherent 2-Channel Transceiver Using a Monolithic Tx/Rx InP PIC and Single SiGe ASIC V Lal, P Studenkov, T Frost, H Tsai, B Behnia, J Osenbach, S Wolf, ... Optical Fiber Communication Conference, M3A. 2, 2020 | 34 | 2020 |
Room Temperature GaN-Based Edge-Emitting Spin-Polarized Light Emitting Diode A Bhattacharya, Z Baten, T Frost, P Bhattacharya IEEE Photonics Technology Letters 29 (3), 338-341, 2017 | 23 | 2017 |
Small-signal modulation and differential gain of red-emitting (λ= 630 nm) InGaN/GaN quantum dot lasers T Frost, A Banerjee, P Bhattacharya Applied Physics Letters 103 (21), 211111, 2013 | 22 | 2013 |
Quantum dot rolled-up microtube optoelectronic integrated circuit S Bhowmick, T Frost, P Bhattacharya Optics Letters 38 (10), 1685-1687, 2013 | 22 | 2013 |
Characteristics of a high speed tunnel injection p-doped quantum dot excited state laser CS Lee, P Bhattacharya, T Frost, W Guo Applied Physics Letters 98 (1), 011103, 2011 | 20 | 2011 |
Characteristics of a high speed tunnel injection p-doped quantum dot excited state laser CS Lee, P Bhattacharya, T Frost, W Guo Applied Physics Letters 98 (1), 011103, 2011 | 20 | 2011 |
GaAs-based high temperature electrically pumped polariton laser MZ Baten, P Bhattacharya, T Frost, S Deshpande, A Das, D Lubyshev, ... Applied Physics Letters 104 (23), 231119, 2014 | 18 | 2014 |
Output polarization characteristics of a GaN microcavity diode polariton laser A Bhattacharya, MZ Baten, I Iorsh, T Frost, A Kavokin, P Bhattacharya Physical Review B 94 (3), 035203, 2016 | 17 | 2016 |