| Screening and interlayer coupling in multilayer graphene field-effect transistors Y Sui, J Appenzeller Nano letters 9 (8), 2973-2977, 2009 | 363 | 2009 |
| Top-gated graphene field-effect-transistors formed by decomposition of SiC YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ... Applied Physics Letters 92 (9), 2008 | 304 | 2008 |
| On-state characteristics of SiC power UMOSFETs on 115-μm drift layers Y Sui, T Tsuji, JA Cooper IEEE Electron Device Letters 26 (4), 255-257, 2005 | 94 | 2005 |
| Optimization of on-State and Switching Performances for 15–20-kV 4H-SiC IGBTs T Tamaki, GG Walden, Y Sui, JA Cooper IEEE transactions on electron devices 55 (8), 1920-1927, 2008 | 81 | 2008 |
| Numerical study on the impact of Mach number on the coupling effect of aerodynamic heating and aerodynamic pressure caused by a tube train J Niu, Y Sui, Q Yu, X Cao, Y Yuan Journal of Wind Engineering and Industrial Aerodynamics 190, 100-111, 2019 | 80 | 2019 |
| Substrate gating of contact resistance in graphene transistors D Berdebes, T Low, Y Sui, J Appenzeller, MS Lundstrom IEEE Transactions on Electron Devices 58 (11), 3925-3932, 2011 | 59 | 2011 |
| High-voltage self-aligned p-channel DMOS-IGBTs in 4H-SiC Y Sui, X Wang, JA Cooper IEEE electron device letters 28 (8), 728-730, 2007 | 57 | 2007 |
| 3.3 kV SiC MOSFETs designed for low on-resistance and fast switching A Bolotnikov, P Losee, K Matocha, J Glaser, J Nasadoski, L Wang, ... 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 52 | 2012 |
| 1.2 kV class SiC MOSFETs with improved performance over wide operating temperature P Losee, A Bolotnikov, L Yu, R Beaupre, Z Stum, S Kennerly, G Dunne, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 38 | 2014 |
| Signatures of disorder in the minimum conductivity of graphene Y Sui, T Low, M Lundstrom, J Appenzeller Nano letters 11 (3), 1319-1322, 2011 | 35 | 2011 |
| Numerical study of the turnoff behavior of high-voltage 4H-SiC IGBTs T Tamaki, GG Walden, Y Sui, JA Cooper IEEE transactions on electron devices 55 (8), 1928-1933, 2008 | 29 | 2008 |
| Power MOSFETs, IGBTs, and thyristors in SiC: Optimization, experimental results, and theoretical performance JA Cooper, T Tamaki, GG Walden, Y Sui, SR Wang, X Wang 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 19 | 2009 |
| Graphene nanostructures for device applications J Appenzeller, Y Sui, Z Chen 2009 Symposium on VLSI Technology, 124-126, 2009 | 14 | 2009 |
| Device options and design considerations for high-voltage (10-20 kV) SiC power switching devices Y Sui, GG Walden, XK Wang, JA Cooper Materials science forum 527, 1449-1452, 2006 | 13 | 2006 |
| On-state and switching performance of high-voltage 15–20 kV 4H-SiC DMOSFETs and IGBTs T Tamaki, GG Walden, Y Sui, JA Cooper Materials Science Forum 600, 1143-1146, 2009 | 12 | 2009 |
| Design, simulation, and characterization of high-voltage SiC p-IGBTs Y Sui, JA Cooper, X Wang, GG Walden Materials Science Forum 600, 1191-1194, 2009 | 11 | 2009 |
| General Electric uses simulation and risk analysis for silicon carbide production system design B Biller, M Hartig, RJ Olson, P Sandvik, G Trant, Y Sui, A Minnick INFORMS Journal on Applied Analytics 49 (2), 117-128, 2019 | 8 | 2019 |
| Multi-layer graphene field-effect transistors for improved device performance Y Sui, J Appenzeller 2009 Device Research Conference, 199-200, 2009 | 5 | 2009 |
| Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500 cm2/Vs and hole mobility exceeding 3400 cm2/Vs Y Wu, DY Peide, MA Capano, T Shen, Y Xuan, Y Sui, M Qi, JA Cooper 2007 International Semiconductor Device Research Symposium, 1-2, 2007 | 4 | 2007 |
| Development of High Voltage P-Channel DMOS-IGBT in 4H-SiC Y Sui Ph. D. Dissertation, School of Electrical and Computer Engineering, Purdue …, 2007 | 2 | 2007 |
