| Schottky Barrier Gate N-Polar GaN-on-Sapphire Deep Recess HEMT With Record 10.5 dB Linear Gain and 50.2% PAE at 94 GHz E Akso, H Collins, K Khan, B Wang, W Li, C Clymore, E Kayede, W Liu, ... IEEE Microwave and Wireless Technology Letters, 2024 | 3 | 2024 |
| Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate N Hatui, H Collins, E Kayede, SS Pasayat, W Li, S Keller, UK Mishra Crystals 12 (7), 989, 2022 | 3 | 2022 |
| Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42: 1 Selectivity to Al0. 24Ga0. 76N E Kayede, E Akso, B Romanczyk, N Hatui, I Sayed, K Khan, H Collins, ... Crystals 14 (6), 485, 2024 | | 2024 |
| N-polar iii-n semiconductor device structures B Romanczyk, E Kayede, W Liu, I Sayed, UK Mishra US Patent App. 17/352,139, 2022 | | 2022 |
