| Substrate RF losses and non-linearities in GaN-on-Si HEMT technology S Yadav, P Cardinael, M Zhao, K Vondkar, A Khaled, R Rodriguez, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.2. 1-8.2. 4, 2020 | 16 | 2020 |
| Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions H Yu, B Parvais, U Peralagu, RY ElKashlan, R Rodriguez, A Khaled, ... 2022 International Electron Devices Meeting (IEDM), 30.6. 1-30.6. 4, 2022 | 8 | 2022 |
| III-V/III-N technologies for next generation high-capacity wireless communication N Collaert, A Alian, A Banerjee, G Boccardi, P Cardinael, V Chauhan, ... 2022 International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2022 | 8 | 2022 |
| Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates P Cardinael, S Yadav, M Zhao, M Rack, D Lederer, N Collaert, B Parvais, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 7 | 2021 |
| Time Dependence of RF Losses in GaN-on-Si Substrates P Cardinael, S Yadav, M Zhao, M Rack, D Lederer, N Collaert, B Parvais, ... IEEE Microwave and Wireless Components Letters 32 (6), 688-691, 2022 | 6 | 2022 |
| Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity P Cardinael, S Yadav, M Rack, U Peralagu, A Alian, B Parvais, N Collaert, ... IEEE Microwave and Wireless Technology Letters, 2024 | 2 | 2024 |
| AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates P Cardinael, S Yadav, H Hahn, M Zhao, S Banerjee, BK Esfeh, C Mauder, ... arXiv preprint arXiv:2404.02707, 2024 | 1 | 2024 |
| High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications Q Courte, M Rack, M Nabet, P Cardinael, JP Raskin ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 1 | 2021 |
| Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates M Perrosé, PA Alba, S Reboh, J Lugo, C Plantier, P Cardinael, M Rack, ... 2024 IEEE/MTT-S International Microwave Symposium-IMS 2024, 944-947, 2024 | | 2024 |
| Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates P Cardinael, S Yadav, B Parvais, JP Raskin IEEE Journal of the Electron Devices Society, 2024 | | 2024 |
| SEMICONDUCTOR SUBSTRATES AND METHODS OF PRODUCING THE SAME B Parvais, S Yadav, M Zhao, P Cardinael US Patent App. 18/324,752, 2023 | | 2023 |
| GaN-on-Porous Silicon for RF Applications G Scheen, R Tuyaerts, P Cardinael, E Ekoga, K Aouadi, C Pavageau, ... 2023 53rd European Microwave Conference (EuMC), 842-845, 2023 | | 2023 |
| (Digital Presentation) Substrate Effects in GaN-on-Si Hemt Technology for RF FEM Applications S Yadav, P Cardinael, M Zhao, K Vondkar, U Peralagu, A Alian, ... Electrochemical Society Meeting Abstracts 242, 1208-1208, 2022 | | 2022 |
| High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications Q Courte, M Rack, M Nabet, P Cardinael, JP Raskin IEEE Journal of the Electron Devices Society 10, 620-626, 2022 | | 2022 |
| Transistor modelling for mm-Wave technology pathfinding B Parvais, R ElKashlan, H Yu, A Sibaja-Hernandez, B Vermeersch, ... 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | | 2021 |
| Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs H Hahn, C Mauder, M Marx, Z Gao, P Lauffer, O Schön, PT John, S Yadav, ... | | |
| " High quality substrate for high frequency FD SOI technology P Cardinael, JP Raskin | | |
