| AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low E Bahat-Treidel, F Brunner, O Hilt, E Cho, J Wurfl, G Trankle IEEE Transactions on Electron Devices 57 (11), 3050-3058, 2010 | 267 | 2010 |
| Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer O Hilt, A Knauer, F Brunner, E Bahat-Treidel, J Würfl 2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010 | 215 | 2010 |
| Fast-switching GaN-based lateral power Schottky barrier diodes with low onset voltage and strong reverse blocking E Bahat-Treidel, O Hilt, R Zhytnytska, A Wentzel, C Meliani, J Wurfl, ... IEEE Electron Device Letters 33 (3), 357-359, 2012 | 207 | 2012 |
| Punchthrough-voltage enhancement of AlGaN/GaN HEMTs using AlGaN double-heterojunction confinement E Bahat-Treidel, O Hilt, F Brunner, J Wurfl, GÜ Trankle IEEE Transactions on Electron Devices 55 (12), 3354-3359, 2008 | 188 | 2008 |
| On the fringing-field effect in liquid-crystal beam-steering devices B Apter, U Efron, E Bahat-Treidel Applied optics 43 (1), 11-19, 2004 | 180 | 2004 |
| AlGaN/GaN/AlGaN DH-HEMTs breakdown voltage enhancement using multiple grating field plates (MGFPs) E Bahat-Treidel, O Hilt, F Brunner, V Sidorov, J Würfl, G Tränkle IEEE Transactions on Electron Devices 57 (6), 1208-1216, 2010 | 171 | 2010 |
| Gate reliability investigation in normally-off p-type-GaN cap/AlGaN/GaN HEMTs under forward bias stress M Ťapajna, O Hilt, E Bahat-Treidel, J Würfl, J Kuzmik IEEE Electron Device Letters 37 (4), 385-388, 2016 | 149 | 2016 |
| Time-dependent failure of GaN-on-Si power HEMTs with p-GaN gate I Rossetto, M Meneghini, O Hilt, E Bahat-Treidel, C De Santi, S Dalcanale, ... IEEE Transactions on Electron Devices 63 (6), 2334-2339, 2016 | 147 | 2016 |
| Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer O Hilt, F Brunner, E Cho, A Knauer, E Bahat-Treidel, J Würfl 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011 | 138 | 2011 |
| Lateral 1.8 kV -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit K Tetzner, EB Treidel, O Hilt, A Popp, SB Anooz, G Wagner, A Thies, ... IEEE Electron Device Letters 40 (9), 1503-1506, 2019 | 133 | 2019 |
| Investigation of the dynamic on-state resistance of 600 V normally-off and normally-on GaN HEMTs N Badawi, O Hilt, E Bahat-Treidel, J Böcker, J Würfl, S Dieckerhoff IEEE Transactions on Industry applications 52 (6), 4955-4964, 2016 | 126 | 2016 |
| Techniques towards GaN power transistors with improved high voltage dynamic switching properties J Würfl, O Hilt, E Bahat-Treidel, R Zhytnytska, P Kotara, F Brunner, ... 2013 IEEE International Electron Devices Meeting, 6.1. 1-6.1. 4, 2013 | 77 | 2013 |
| Reliability issues of GaN based high voltage power devices J Wuerfl, E Bahat-Treidel, F Brunner, E Cho, O Hilt, P Ivo, A Knauer, ... Microelectronics Reliability 51 (9-11), 1710-1716, 2011 | 74 | 2011 |
| Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs O Hilt, E Bahat-Treidel, E Cho, S Singwald, J Würfl 2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012 | 71 | 2012 |
| Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors M Ťapajna, O Hilt, E Bahat-Treidel, J Würfl, J Kuzmík Applied Physics Letters 107 (19), 2015 | 63 | 2015 |
| AlGaN/GaN HEMT with integrated recessed Schottky-drain protection diode E Bahat-Treidel, R Lossy, J Wurfl, GÜ Trankle IEEE electron device letters 30 (9), 901-903, 2009 | 61 | 2009 |
| Fringing-field effect in liquid-crystal beam-steering devices: an approximate analytical model U Efron, B Apter, E Bahat-Treidel JOSA A 21 (10), 1996-2008, 2004 | 55 | 2004 |
| 70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates O Hilt, R Zhytnytska, J Böcker, E Bahat-Treidel, F Brunner, A Knauer, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 51 | 2015 |
| GaN-based HEMTs for high voltage operation: design, technology and characterization E Bahat-Treidel Cuvillier Verlag, 2012 | 48 | 2012 |
| High-voltage normally OFF GaN power transistors on SiC and Si substrates O Hilt, E Bahat-Treidel, A Knauer, F Brunner, R Zhytnytska, J Würfl MRS Bulletin 40 (5), 418-424, 2015 | 42 | 2015 |
