Metallic nanowire networks: effects of thermal annealing on electrical resistance DP Langley, M Lagrange, G Giusti, C Jiménez, Y Bréchet, ND Nguyen, ... Nanoscale 6 (22), 13535-13543, 2014 | 302 | 2014 |
Determination of charge-carrier transport in organic devices by admittance spectroscopy: Application to hole mobility in α-NPD ND Nguyen, M Schmeits, HP Loebl Physical Review B 75 (7), 075307, 2007 | 149 | 2007 |
Stability enhancement of silver nanowire networks with conformal ZnO coatings deposited by atmospheric pressure spatial atomic layer deposition A Khan, VH Nguyen, D Muñoz-Rojas, S Aghazadehchors, C Jiménez, ... ACS applied materials & interfaces 10 (22), 19208-19217, 2018 | 108 | 2018 |
Advances in flexible metallic transparent electrodes VH Nguyen, DT Papanastasiou, J Resende, L Bardet, T Sannicolo, ... Small 18 (19), 2106006, 2022 | 92 | 2022 |
ZnO/CuCrO2 Core–Shell Nanowire Heterostructures for Self‐Powered UV Photodetectors with Fast Response T Cossuet, J Resende, L Rapenne, O Chaix‐Pluchery, C Jiménez, ... Advanced Functional Materials 28 (43), 1803142, 2018 | 86 | 2018 |
Transparent Electrodes Based on Silver Nanowire Networks: From Physical Considerations towards Device Integration D Bellet, M Lagrange, T Sannicolo, S Aghazadehchors, VH Nguyen, ... Materials 10 (6), 570, 2017 | 84 | 2017 |
Integration of III-V on Si for High-Mobility CMOS N Waldron, G Wang, ND Nguyen, T Orzali, C Merckling, G Brammertz, ... Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International, 1-2, 2012 | 74* | 2012 |
Physical routes for the synthesis of kesterite T Ratz, G Brammertz, R Caballero, M León, S Canulescu, J Schou, ... Journal of Physics: Energy 1 (4), 042003, 2019 | 62 | 2019 |
High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors S Wirths, D Stange, MA Pampillón, AT Tiedemann, G Mussler, A Fox, ... ACS applied materials & interfaces 7 (1), 62-67, 2014 | 60 | 2014 |
Direct Imaging of the Onset of Electrical Conduction in Silver Nanowire Networks by Infrared Thermography: Evidence of Geometrical Quantized Percolation T Sannicolo, D Muñoz-Rojas, ND Nguyen, S Moreau, C Celle, ... Nano Letters 16 (11), 7046-7053, 2016 | 51 | 2016 |
Selective area growth of InP in shallow-trench-isolated structures on off-axis Si (001) substrates G Wang, MR Leys, ND Nguyen, R Loo, G Brammertz, O Richard, ... Journal of the Electrochemical Society 157 (11), H1023, 2010 | 48 | 2010 |
Note on the numerical solution of the scalar Helmholtz equation in a nanotorus with uniform Dirichlet boundary conditions ND Nguyen, R Evrard, MA Stroscio arXiv preprint arXiv:1603.06213, 2016 | 45* | 2016 |
Versatility of bilayer metal oxide coatings on silver nanowire networks for enhanced stability with minimal transparency loss S Aghazadehchors, VH Nguyen, D Muñoz-Rojas, C Jiménez, L Rapenne, ... Nanoscale 11 (42), 19969-19979, 2019 | 42 | 2019 |
Magnetic flux penetration in Nb superconducting films with lithographically defined microindentations J Brisbois, OA Adami, JI Avila, M Motta, WA Ortiz, ND Nguyen, ... Physical Review B 93 (5), 054521, 2016 | 42 | 2016 |
Percolation in networks of 1-dimensional objects: comparison between Monte Carlo simulations and experimental observations DP Langley, M Lagrange, ND Nguyen, D Bellet Nanoscale horizons 3 (5), 545-550, 2018 | 39 | 2018 |
Numerical simulation of impedance and admittance of OLEDs ND Nguyen, M Schmeits physica status solidi (a) 203 (8), 1901-1914, 2006 | 38 | 2006 |
Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes ND Nguyen, M Germain, M Schmeits, B Schineller, M Heuken Journal of Applied Physics 90 (2), 985-993, 2001 | 36 | 2001 |
Si/SiGe Resonant Interband Tunneling Diodes Incorporating -Doping Layers Grown by Chemical Vapor Deposition SY Park, R Anisha, PR Berger, R Loo, ND Nguyen, S Takeuchi, ... IEEE Electron Device Letters 30 (11), 1173-1175, 2009 | 35 | 2009 |
Imprinting superconducting vortex footsteps in a magnetic layer J Brisbois, M Motta, JI Avila, G Shaw, T Devillers, NM Dempsey, ... Scientific reports 6, 27159, 2016 | 33 | 2016 |
A 400GHz fMAX fully self-aligned SiGe:C HBT architecture S Van Huylenbroeck, A Sibaja-Hernandez, R Venegas, S You, ... 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 5-8, 2009 | 33 | 2009 |