| Self-accelerated thermal dissolution model for reset programming in unipolar resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita IEEE Transactions on Electron Devices 56 (2), 193-200, 2009 | 521 | 2009 |
| Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices U Russo, D Ielmini, C Cagli, AL Lacaita IEEE Transactions on Electron Devices 56 (2), 186-192, 2009 | 432 | 2009 |
| Study of multilevel programming in programmable metallization cell (PMC) memory U Russo, D Kamalanathan, D Ielmini, AL Lacaita, MN Kozicki IEEE transactions on electron devices 56 (5), 1040-1047, 2009 | 378 | 2009 |
| Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ... 2007 IEEE International Electron Devices Meeting, 775-778, 2007 | 261 | 2007 |
| Modeling of programming and read performance in phase-change memories—Part I: Cell optimization and scaling U Russo, D Ielmini, A Redaelli, AL Lacaita IEEE Transactions on Electron Devices 55 (2), 506-514, 2008 | 147 | 2008 |
| Intrinsic data retention in nanoscaled phase-change memories—Part I: Monte Carlo model for crystallization and percolation U Russo, D Ielmini, A Redaelli, AL Lacaita IEEE Transactions on Electron Devices 53 (12), 3032-3039, 2006 | 104 | 2006 |
| Analytical modeling of chalcogenide crystallization for PCM data-retention extrapolation U Russo, D Ielmini, AL Lacaita IEEE transactions on electron devices 54 (10), 2769-2777, 2007 | 98 | 2007 |
| Voltage-driven on–off transition and tradeoff with program and erase current in programmable metallization cell (PMC) memory D Kamalanathan, U Russo, D Ielmini, MN Kozicki IEEE Electron Device Letters 30 (5), 553-555, 2009 | 81 | 2009 |
| Intrinsic data retention in nanoscaled phase-change memories—Part II: Statistical analysis and prediction of failure time A Redaelli, D Ielmini, U Russo, AL Lacaita IEEE Transactions on Electron Devices 53 (12), 3040-3046, 2006 | 81 | 2006 |
| Modeling of programming and read performance in phase-change memories—Part II: Program disturb and mixed-scaling approach U Russo, D Ielmini, A Redaelli, AL Lacaita IEEE Transactions on Electron Devices 55 (2), 515-522, 2008 | 64 | 2008 |
| Impact of electrode materials on resistive-switching memory programming U Russo, C Cagli, S Spiga, E Cianci, D Ielmini IEEE Electron Device Letters 30 (8), 817-819, 2009 | 44 | 2009 |
| Micron Semiconductor Italia srl R&D, Via C. Olivetti 2, 20864, Agrate Brianza, Italy A Redaelli, M Boniardi, A Ghetti, U Russo, C Cupeta, S Lavizzari, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 30.4. 1-30.4. 4, 2013 | 30* | 2013 |
| Memory cells and integrated devices A Redaelli, U Russo, A Pirovano, S Lavizzari US Patent 8,723,155, 2014 | 28 | 2014 |
| Memory cells and integrated devices A Redaelli, U Russo, A Pirovano, S Lavizzari US Patent 8,723,155, 2014 | 27 | 2014 |
| Void formation in charge trap structures CM Carlson, U Russo US Patent 10,453,855, 2019 | 26 | 2019 |
| IEDM Tech. Dig. U Russo, D Ielmini, C Cagli, AL Lacaita, S Spiga, C Wiemer, M Perego, ... IEDM Tech. Dig, 775, 2007 | 19 | 2007 |
| Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories S Spiga, G Congedo, U Russo, A Lamperti, O Salicio, F Driussi, ... Solid-State Device Research Conference, Proceedings of the European, 408, 2010 | 15 | 2010 |
| Memory cells having a plurality of resistance variable materials U Russo, A Redaelli, F Pellizzer US Patent 9,449,683, 2016 | 14 | 2016 |
| Memory cells, integrated devices, and methods of forming memory cells A Redaelli, U Russo, A Pirovano, S Lavizzari US Patent 9,299,930, 2016 | 13 | 2016 |
| Memory cells having a plurality of resistance variable materials U Russo, A Redaelli, F Pellizzer US Patent 9,449,683, 2016 | 12 | 2016 |
Daniele IelminiProfessor of Electronics在 elet.polimi.it 的电子邮件经过验证
