| A smart gate driver IC for GaN power HEMTs with dynamic ringing suppression WJ Zhang, J Yu, WT Cui, Y Leng, J Liang, YT Hsieh, HH Tsai, YZ Juang, ... IEEE Transactions on Power Electronics 36 (12), 14119-14132, 2021 | 42 | 2021 |
| A smart IGBT gate driver IC with temperature compensated collector current sensing J Chen, WJ Zhang, A Shorten, J Yu, M Sasaki, T Kawashima, H Nishio, ... IEEE Transactions on Power Electronics 34 (5), 4613-4627, 2018 | 34 | 2018 |
| A smart gate driver IC for GaN power transistors J Yu, WJ Zhang, A Shorten, R Li, WT Ng 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 26 | 2018 |
| Scaled submicron field-plated enhancement mode high-K gallium nitride transistors on 300mm Si (111) wafer with power FoM (R ON xQ GG) of 3.1 mohm-nC at 40V and f T/f MAX of 130 … HW Then, M Radosavljevic, P Koirala, M Beumer, S Bader, A Zubair, ... 2022 International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2022 | 23 | 2022 |
| An integrated gate driver for E-mode GaN HEMTs with active clamping for reverse conduction detection WJ Zhang, Y Leng, J Yu, YS Lu, CY Cheng, WT Ng 2019 31st international symposium on power semiconductor devices and ics …, 2019 | 20 | 2019 |
| Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review N Kim, J Yu, W Zhang, R Li, M Wang, WT Ng Journal of Electronic Materials 49, 6829-6843, 2020 | 19 | 2020 |
| A segmented gate driver for E-mode GaN HEMTs with simple driving strength pattern control WJ Zhang, J Yu, Y Leng, WT Cui, GQ Deng, WT Ng 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 19 | 2020 |
| A 32-A, 5-V-input, 94.2% peak efficiency high-frequency power converter module featuring package-integrated low-voltage GaN nMOS power transistors N Desai, HW Then, J Yu, HK Krishnamurthy, WJ Lambert, N Butzen, ... IEEE Journal of Solid-State Circuits 57 (4), 1090-1099, 2022 | 17 | 2022 |
| A segmented output stage H-bridge IC with tunable gate driver JS Yu, WJ Zhang, WT Ng 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 16 | 2014 |
| Digital dead-time control for an integrated tri-mode buck-boost DC-DC converter JS Yu, G Jin, SL Cheng, WT Ng 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE …, 2015 | 11 | 2015 |
| Design trends in smart gate driver ICs for power GaN HEMTs WT Ng, J Yu, M Wang, R Li, W Zhang 2018 14th ieee international conference on solid-state and integrated …, 2018 | 10 | 2018 |
| Gate driver IC for enhancement mode GaN power transistors with senseFET reverse conduction detection circuit WJ Zhang, Y Leng, J Yu, X Jiang, CY Cheng, WT Ng IET Power Electronics 12 (15), 3928-3935, 2019 | 7 | 2019 |
| An IGBT gate driver IC with collector current sensing J Chen, W Zhang, A Shorten, J Yu, WT Ng, M Sasaki, T Kawashima, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 6 | 2017 |
| A smart gate driver IC for GaN power transistors J Yu University of Toronto (Canada), 2019 | 3 | 2019 |
| 14.9 A Monolithic 10.5W/mm2600 MHz Top-Metal and C4 Planar Spiral Inductor-Based Integrated Buck Voltage Regulator on 16nm-Class CMOS S Kim, HK Krishnamurthy, Z Ahmed, N Desai, S Weng, A Augustine, ... 2024 IEEE International Solid-State Circuits Conference (ISSCC) 67, 270-272, 2024 | 2 | 2024 |
| 28.4 A Monolithic 12.7W/mm2 Pmax, 92% Peak-Efficiency CSCR-First Switched-Capacitor DC-DC Converter N Butzen, H Krishnamurthy, J Yu, ZK Ahmed, S Weng, K Ravichandran, ... 2024 IEEE International Solid-State Circuits Conference (ISSCC) 67, 462-464, 2024 | 2 | 2024 |
| An Intelligent IGBT Gate Driver IC with Temperature Compensated Gate Side Collector Current Sensing R Li, M Wang, J Yu, W Zhang, WT Ng, M Sasaki, T Kawashima, H Nishio, ... PCIM Asia 2020; International Exhibition and Conference for Power …, 2020 | 2 | 2020 |
| A Gate Driver IC for Enhancement Mode GaN Power Transistors with Precise Dead-time Correction W Zhang, Y Leng, J Yu, J Xiaoxue, C Chuyao, WT Ng 14th International Seminar on Power Semiconductors (ISPS), Prague, Czech …, 2018 | 2 | 2018 |
| An integrated tri-mode DC-DC converter with segmented power devices and power transmission gate JS Yu, G Jin, WT Ng, SL Cheng 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 1 | 2015 |
| A Monolithic 12.7 W/mm2, 92% Peak-Efficiency Switched-Capacitor DC–DC Converter Using CSCR-First Topology N Butzen, HK Krishnamurthy, J Yu, ZK Ahmed, S Weng, K Ravichandran, ... IEEE Journal of Solid-State Circuits, 2024 | | 2024 |
