| Current-voltage characteristics and barrier parameters of Pd2Si/p-Si (111) Schottky diodes in a wide temperature range S Chand, J Kumar Semiconductor science and technology 10 (12), 1680, 1995 | 238 | 1995 |
| Evidence for the double distribution of barrier heights in Schottky diodes from I-V-T measurements S Chand, J Kumar Semiconductor science and technology 11 (8), 1203, 1996 | 227 | 1996 |
| On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes S Chand, J Kumar Journal of applied physics 80 (1), 288-294, 1996 | 204 | 1996 |
| Current transport in Pd2Si/n-Si(100) Schottky barrier diodes at low temperatures S Chand, J Kumar Applied Physics A 63, 171-178, 1996 | 199 | 1996 |
| Effects of barrier height distribution on the behavior of a Schottky diode S Chand, J Kumar Journal of Applied Physics 82 (10), 5005-5010, 1997 | 193 | 1997 |
| Analysis of current–voltage characteristics of inhomogeneous Schottky diodes at low temperatures S Chand, S Bala Applied surface science 252 (2), 358-363, 2005 | 132 | 2005 |
| On the intersecting behaviour of current–voltage characteristics of inhomogeneous Schottky diodes at low temperatures S Chand Semiconductor science and technology 19 (1), 82, 2003 | 101 | 2003 |
| Green synthesis of zinc oxide nano-sized spherical particles using Terminalia chebula fruits extract for their photocatalytic applications N Rana, S Chand, AK Gathania International Nano Letters 6 (2), 91-98, 2016 | 95 | 2016 |
| Electron transport and barrier inhomogeneities in palladium silicide Schottky diodes S Chand, J Kumar Applied physics A 65 (4), 497-503, 1997 | 83 | 1997 |
| An accurate approach for analysing an inhomogeneous Schottky diode with a Gaussian distribution of barrier heights S Chand Semiconductor science and technology 17 (7), L36, 2002 | 80 | 2002 |
| Simulation and analysis of the I-V characteristics of a Schottky diode containing barrier inhomogeneities S Chand, J Kumar Semiconductor science and technology 12 (7), 899, 1997 | 65 | 1997 |
| Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes S Chand, S Bala Physica B: Condensed Matter 390 (1-2), 179-184, 2007 | 61 | 2007 |
| Fabrication and electrical characterization of nickel/p-Si Schottky diode at low temperature R Kumar, S Chand Solid State Sciences 58, 115-121, 2016 | 53 | 2016 |
| Tailoring the structural and optical properties of ZnO by doping with Cd N Rana, S Chand, AK Gathania Ceramics International 41 (9), 12032-12037, 2015 | 50 | 2015 |
| Preparation and charge transport studies of chemically synthesized polyaniline A Kapil, M Taunk, S Chand Journal of Materials Science: Materials in Electronics 21, 399-404, 2010 | 47 | 2010 |
| Synthesis and characterization of flower-like ZnO structures and their applications in photocatalytic degradation of Rhodamine B dye N Rana, S Chand, AK Gathania Journal of Materials Science: Materials in Electronics 27, 2504-2510, 2016 | 44 | 2016 |
| Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range A Kumar, A Kumar, KK Sharma, S Chand Superlattices and Microstructures 128, 373-381, 2019 | 43 | 2019 |
| Current–voltage characteristics of Schottky diode simulated using semiconductor device equations P Kaushal, S Chand, J Osvald International Journal of Electronics 100 (5), 686-698, 2013 | 40 | 2013 |
| Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes N Kumar, S Chand Journal of Alloys and Compounds 817, 153294, 2020 | 38 | 2020 |
| Hopping and tunneling transport over a wide temperature range in chemically synthesized doped and undoped polypyrrole M Taunk, A Kapil, S Chand Solid state communications 150 (37-38), 1766-1769, 2010 | 33 | 2010 |
Manish TaunkAssociate Professor of Physics, Chandigarh University Punjab, India.在 mau.edu.in 的电子邮件经过验证
