| Control of gold surface diffusion on Si nanowires MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ... Nano letters 8 (5), 1544-1550, 2008 | 137 | 2008 |
| Epitaxy Of GaN Nanowires On Graphene V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ... Nano Letters, 2016 | 130 | 2016 |
| Effect of HCl on the doping and shape control of silicon nanowires P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ... Nanotechnology 23 (21), 215702, 2012 | 90 | 2012 |
| Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory G Priante, F Glas, G Patriarche, K Pantzas, F Oehler, JC Harmand Nano letters 16 (3), 1917-1924, 2016 | 86 | 2016 |
| Measuring and modeling the growth dynamics of self-catalyzed GaP nanowire arrays F Oehler, A Cattoni, A Scaccabarozzi, G Patriarche, F Glas, JC Harmand Nano letters 18 (2), 701-708, 2018 | 73 | 2018 |
| Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ... Physical Review B 92 (23), 235419, 2015 | 73 | 2015 |
| Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires G Priante, G Patriarche, F Oehler, F Glas, JC Harmand Nano letters 15 (9), 6036-6041, 2015 | 68 | 2015 |
| The importance of the radial growth in the faceting of silicon nanowires F Oehler, P Gentile, T Baron, P Ferret, M Den Hertog, J Rouviere Nano letters 10 (7), 2335-2341, 2010 | 66 | 2010 |
| Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method O Demichel, V Calvo, A Besson, P Noé, B Salem, N Pauc, F Oehler, ... Nano letters 10 (7), 2323-2329, 2010 | 66 | 2010 |
| The effects of HCl on silicon nanowire growth: surface chlorination and existence of a'diffusion-limited minimum diameter' F Oehler, P Gentile, T Baron, P Ferret Nanotechnology 20 (47), 475307, 2009 | 66 | 2009 |
| The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ... Applied physics letters 105 (11), 2014 | 65 | 2014 |
| Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ... Applied Physics Letters 106 (7), 2015 | 64 | 2015 |
| Interface dipole and band bending in the hybrid heterojunction H Henck, Z Ben Aziza, O Zill, D Pierucci, CH Naylor, MG Silly, N Gogneau, ... Physical Review B 96 (11), 115312, 2017 | 63 | 2017 |
| Structure and strain relaxation effects of defects in InxGa1− xN epilayers SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ... Journal of Applied Physics 116 (10), 2014 | 51 | 2014 |
| Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy T Zhu, F Oehler, BPL Reid, RM Emery, RA Taylor, MJ Kappers, RA Oliver Applied Physics Letters 102, 251905, 2013 | 50 | 2013 |
| Hidden defects in silicon nanowires MI Den Hertog, C Cayron, P Gentile, F Dhalluin, F Oehler, T Baron, ... Nanotechnology 23 (2), 025701, 2011 | 50 | 2011 |
| Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges F Oehler, T Zhu, S Rhode, MJ Kappers, CJ Humphreys, RA Oliver Journal of Crystal Growth 383, 12-18, 2013 | 48 | 2013 |
| Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence HL Chen, C Himwas, A Scaccabarozzi, P Rale, F Oehler, A Lemaître, ... Nano letters 17 (11), 6667-6675, 2017 | 46 | 2017 |
| Self-induced growth of vertical GaN nanowires on silica V Kumaresan, L Largeau, F Oehler, H Zhang, O Mauguin, F Glas, ... Nanotechnology 27 (13), 135602, 2016 | 46 | 2016 |
| Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloys C Ernandes, L Khalil, H Almabrouk, D Pierucci, B Zheng, J Avila, P Dudin, ... npj 2D Materials and Applications 5 (1), 7, 2021 | 42 | 2021 |
Rachel OliverProfessor of Materials Science, Cambridge University在 cam.ac.uk 的电子邮件经过验证
