| Luminescence properties and energy transfer of Ce3+/Tb3+ co-doped Ca9La (PO4) 5 (SiO4) F2 phosphor L Mei, J Xie, H Liu, L Liao, Y Zhang, M Li Optics Communications 335, 90-93, 2015 | 28 | 2015 |
| Synthesis and up-conversion luminescence properties of Ho3+, Yb3+ co-doped BaLa2ZnO5 J Xie, L Mei, L Liao, M Guan, H Liu Journal of Physics and Chemistry of Solids 83, 152-156, 2015 | 26 | 2015 |
| Up-conversion luminescence properties and energy transfer of Tm3+/Yb3+ co-doped BaLa2ZnO5 J Xie, L Mei, J Deng, H Liu, B Ma, M Guan, L Liao, G Lv Journal of Solid State Chemistry 231, 212-216, 2015 | 25 | 2015 |
| Preparation, Structure, and Up‐Conversion Luminescence of Yb3+/Er3+ Codoped SrIn2O4 Phosphors M Guan, H Zheng, L Mei, MS Molokeev, J Xie, T Yang, X Wu, S Huang, ... Journal of the American Ceramic Society 98 (4), 1182-1187, 2015 | 23 | 2015 |
| Synergistic effects of charge transport engineering and passivation enabling efficient inverted perovskite quantum-dot light-emitting diodes J Pan, F Fang, J Xie, L Wang, J Chen, J Chang, W Lei, W Zhang, D Zhao Journal of Materials Chemistry C 8 (16), 5572-5579, 2020 | 22 | 2020 |
| Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2 field-effect-transistors J Xie, NM Patoary, G Zhou, MY Sayyad, S Tongay, IS Esqueda Nanotechnology 33 (22), 225702, 2022 | 21 | 2022 |
| Hydrothermal synthesis and upconversion luminescent properties of Sr2LaF7 doped with Yb3+ and Er3+ nanophosphors J Xie, J Bin, M Guan, H Liu, D Yang, J Xue, L Liao, L Mei Journal of Luminescence 200, 133-140, 2018 | 21 | 2018 |
| Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling NH Patoary, J Xie, G Zhou, F Al Mamun, M Sayyad, S Tongay, IS Esqueda Scientific reports 13 (1), 3304, 2023 | 17 | 2023 |
| Hexagonal boron nitride (h-BN) memristor arrays for analog-based machine learning hardware J Xie, S Afshari, I Sanchez Esqueda npj 2D Materials and Applications 6 (1), 50, 2022 | 16 | 2022 |
| Tunable Upconversion Luminescence and Energy Transfer Process in BaLa2ZnO5:Er3+/Yb3+ Phosphors L Mei, J Xie, L Liao, M Guan, H Liu Advances in Materials Science and Engineering 2015 (1), 380936, 2015 | 9 | 2015 |
| Quantum conductance in vertical hexagonal boron nitride memristors with graphene-edge contacts J Xie, MN Patoary, MA Rahman Laskar, ND Ignacio, X Zhan, U Celano, ... Nano Letters 24 (8), 2473-2480, 2024 | 5 | 2024 |
| Dot-product computation and logistic regression with 2D hexagonal-boron nitride (h-BN) memristor arrays S Afshari, S Radhakrishnan, J Xie, M Musisi-Nkambwe, J Meng, W He, ... 2D Materials 10 (3), 035031, 2023 | 5 | 2023 |
| Preparation of N‐Doped TiO2‐ZrO2 Composite Films under Electric Field and Heat Treatment and Assessment of Their Removal of Methylene Blue from Solution L Mei, R Zuo, J Xie, L Liao, H Ding Advances in Materials Science and Engineering 2014 (1), 129540, 2014 | 4 | 2014 |
| Unsupervised learning in hexagonal boron nitride memristor-based spiking neural networks S Afshari, J Xie, M Musisi-Nkambwe, S Radhakrishnan, IS Esqueda Nanotechnology 34 (44), 445703, 2023 | 3 | 2023 |
| Analysis and EOT Scaling on Top‐and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs NH Patoary, FA Mamun, J Xie, T Grasser, I Sanchez Esqueda Advanced Electronic Materials, 2400152, 2024 | | 2024 |
| A Study on h‐BN Resistive Switching Temporal Response M Musisi‐Nkambwe, S Afshari, J Xie, H Warner, I Sanchez Esqueda Advanced Electronic Materials, 2400022, 2024 | | 2024 |
| Trapping effects on charge transport in graphene field-effect transistors with high-K gate dielectrics G Zhou, NH Patoary, J Xie, FA Mamun, I Sanchez Esqueda Journal of Applied Physics 134 (14), 2023 | | 2023 |
| Two Dimensional Materials Based Memristors for In-memory Computing and Neuromorphic Computing J Xie Arizona State University, 2023 | | 2023 |
