Magnetoelectric coupling effects in multiferroic complex oxide composite structures CAF Vaz, J Hoffman, CH Ahn, R Ramesh Advanced Materials 22 (26‐27), 2900-2918, 2010 | 969 | 2010 |
Magnetoelectric effects in complex oxides with competing ground states HJA Molegraaf, J Hoffman, CAF Vaz, S Gariglio, D van der Marel, CH Ahn, ... Advanced Materials 21 (34), 3470-3474, 2009 | 503 | 2009 |
Origin of the Magnetoelectric Coupling Effect in Pb (Zr_ {0.2} Ti_ {0.8}) O_ {3}/La_ {0.8} Sr_ {0.2} MnO_ {3} Multiferroic Heterostructures CAF Vaz, J Hoffman, Y Segal, JW Reiner, RD Grober, Z Zhang, CH Ahn, ... Physical review letters 104 (12), 127202, 2010 | 400 | 2010 |
Ferroelectric field effect transistors for memory applications J Hoffman, X Pan, JW Reiner, FJ Walker, JP Han, CH Ahn, TP Ma Advanced Materials 22 (26‐27), 2957-2961, 2010 | 316 | 2010 |
Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011) M Liu, J Hoffman, J Wang, J Zhang, B Nelson-Cheeseman, ... Scientific reports 3 (1), 1876, 2013 | 182 | 2013 |
Unusual resistance hysteresis in< equation> n</equation>-layer graphene field effect transistors fabricated on ferroelectric< equation>< font face='verdana'> Pb</font>(< font … X Hong, J Hoffman, A Posadas, K Zou, CH Ahn, J Zhu Applied Physics Letters 97 (3), 033114-033114-3, 2010 | 159* | 2010 |
Interface-induced nonswitchable domains in ferroelectric thin films MG Han, MSJ Marshall, L Wu, MA Schofield, T Aoki, R Twesten, ... Nature communications 5 (1), 4693, 2014 | 150 | 2014 |
Charge transfer and interfacial magnetism in (LaNiO3)n/(LaMnO3)2 superlattices J Hoffman, IC Tung, BB Nelson-Cheeseman, M Liu, JW Freeland, ... Physical Review B 88, 144411, 2013 | 121 | 2013 |
Temperature dependence of the magnetoelectric effect in Pb (ZrTi) O/LaSrMnO multiferroic heterostructures CAF Vaz, Y Segal, J Hoffman, RD Grober, FJ Walker, CH Ahn Applied Physics Letters 97, 042506, 2010 | 96* | 2010 |
Magnetic anisotropy modulation of magnetite in Fe3O4/BaTiO3 (100) epitaxial structures CAF Vaz, J Hoffman, AB Posadas, CH Ahn Applied Physics Letters 94, 022504, 2009 | 91 | 2009 |
Image registration of low signal-to-noise cryo-STEM data BH Savitzky, I El Baggari, CB Clement, E Waite, BH Goodge, DJ Baek, ... Ultramicroscopy 191, 56-65, 2018 | 84 | 2018 |
Examining graphene field effect sensors for ferroelectric thin film studies A Rajapitamahuni, J Hoffman, CH Ahn, X Hong Nano letters 13 (9), 4374-4379, 2013 | 78 | 2013 |
Monodomain to polydomain transition in ferroelectric PbTiO3 thin films with La0. 67Sr0. 33MnO3 electrodes C Lichtensteiger, M Dawber, N Stucki, JM Triscone, J Hoffman, JB Yau, ... Applied Physics Letters 90 (5), 2007 | 70 | 2007 |
Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications J Hoffman, X Hong, CH Ahn Nanotechnology 22 (25), 254014, 2011 | 64 | 2011 |
Planar Hall-effect magnetic random access memory Y Bason, L Klein, JB Yau, X Hong, J Hoffman, CH Ahn Journal of applied physics 99 (8), 08R701-08R701-3, 2006 | 64 | 2006 |
Oscillatory noncollinear magnetism induced by interfacial charge transfer in superlattices composed of metallic oxides JD Hoffman, BJ Kirby, J Kwon, G Fabbris, D Meyers, JW Freeland, I Martin, ... Physical Review X 6 (4), 041038, 2016 | 62 | 2016 |
Control of magnetism in Pb (Zr0. 2Ti0. 8) O3/La0. 8Sr0. 2MnO3 multiferroic heterostructures CAF Vaz, J Hoffman, Y Segal, MSJ Marshall, JW Reiner, Z Zhang, ... Journal of Applied Physics 109 (7), 2011 | 59 | 2011 |
Effect of electric field doping on the anisotropic magnetoresistance in doped manganites X Hong, JB Yau, JD Hoffman, CH Ahn, Y Bason, L Klein Physical Review B 74 (17), 174406, 2006 | 59 | 2006 |
Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect SM Wu, J Hoffman, JE Pearson, A Bhattacharya Applied Physics Letters 105 (9), 2014 | 57 | 2014 |
Magnetoresistance tensor of La_ {0.8} Sr_ {0.2} MnO_ {3} Y Bason, J Hoffman, CH Ahn, L Klein Physical Review B 79 (9), 092406, 2009 | 57 | 2009 |