| Fundamental variability limits of filament-based RRAM A Grossi, E Nowak, C Zambelli, C Pellissier, S Bernasconi, G Cibrario, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2016 | 137 | 2016 |
| Light harvesting by planar photonic crystals in solar cells: the case of amorphous silicon G Gomard, X Meng, E Drouard, K El Hajjam, E Gerelli, R Peretti, A Fave, ... Journal of Optics 14 (2), 024011, 2012 | 62 | 2012 |
| Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme R Vallat, R Gassilloud, O Salicio, K El Hajjam, G Molas, B Pelissier, ... Journal of Vacuum Science & Technology A 37 (2), 2019 | 39 | 2019 |
| Sub-pJ consumption and short latency time in RRAM arrays for high endurance applications G Sassine, C Nail, L Tillie, DA Robayo, A Levisse, C Cagli, KE Hajjam, ... 2018 IEEE International Reliability Physics Symposium (IRPS), P-MY. 2-1-P-MY …, 2018 | 32 | 2018 |
| Study of the energy consumption optimization on RRAM memory array for SCM applications C Cagli, G Molas, M Harrand, S Bernasconi, C Charpin, K El Hajjam, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 19 | 2017 |
| Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering K El Hajjam, N Baboux, F Calmon, A Souifi, O Poncelet, LA Francis, ... Journal of Vacuum Science & Technology A 32 (1), 2014 | 16 | 2014 |
| Tunnel junction engineering for optimized metallic single-electron transistor KG El Hajjam, MA Bounouar, N Baboux, S Ecoffey, M Guilmain, E Puyoo, ... IEEE Transactions on Electron Devices 62 (9), 2998-3003, 2015 | 15 | 2015 |
| Room temperature double gate single electron transistor based standard cell library MA Bounouar, A Beaumont, K El Hajjam, F Calmon, D Drouin Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale …, 2012 | 12 | 2012 |
| Integration of Ruthenium-based wordline in a 3-D NAND memory devices L Breuil, GK El Hajjam, S Ramesh, A Ajaykumar, A Arreghini, L Zhang, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 9 | 2020 |
| Study of forming impact on 4Kbit RRAM array performances and reliability C Nguyen, C Cagli, G Molas, B Sklenard, C Nail, K El Hajjam, JF Nodin, ... 2017 IEEE International Memory Workshop (IMW), 1-4, 2017 | 6 | 2017 |
| Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories S Ramesh, A Ajaykumar, LÅ Ragnarsson, L Breuil, GK El Hajjam, ... Micromachines 12 (9), 1084, 2021 | 3 | 2021 |
| IEEE Int. Electron Devices Meet A Grossi, E Nowak, C Zambelli, C Pellissier, S Bernasconi, G Cibrario, ... IEEE, San Francisco, CA, 4-7, 2016 | 2 | 2016 |
| Three dimensional resistive random access memory and method enabling such a memory to be obtained K El Hajjam, G Molas, J Nodin US Patent 11,393,876, 2022 | 1 | 2022 |
| Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector A Haider, S Deng, W Devulder, JW Maes, JM Girard, GK El Hajjam, ... Materials Advances 2 (5), 1635-1643, 2021 | 1 | 2021 |
| Ingénierie de jonctions tunnel pour améliorer les performances du transistor mono-électronique métallique K El Hajjam INSA de Lyon; Université de Sherbrooke (Québec, Canada), 2015 | 1 | 2015 |
| Three-dimensional resistive random access memory and method making it possible to obtain such a memory K El Hajjam US Patent 11,985,833, 2024 | | 2024 |
| Van den bosch, G.; et al. Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories. Micromachines 2021, 12, 1084 S Ramesh, A Ajaykumar, LÅ Ragnarsson, L Breuil, GK El Hajjam, ... Flash Memory Devices, 107, 2021 | | 2021 |
| Pulsed CVD of amorphous GeSe for application as OTS selector A Haider, S Deng, E Schapmans, J Maes, JM Girard, GK El Hajjam, ... | | 2019 |
| Pulsed CVD/ALD of Amorphous GeSe for Application as OTS Selector A Haiderő | | 2019 |
| Integration and Electrical Characterization of Indium-Oxide Nanoparticles in Oxide Resistive Random-Access Memories A Souifi, E Cossec, K Hamga, PV Guenery, M Troudi, K El Hajjam, ... CMOS Emerging Technologies, 2016 | | 2016 |
Francis CalmonINL - INSA Lyon在 insa-lyon.fr 的电子邮件经过验证
