| Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation K Tachiki, M Kaneko, T Kimoto Applied Physics Express 14 (3), 031001, 2021 | 53 | 2021 |
| High-temperature operation of n-and p-channel JFETs fabricated by ion implantation into a high-purity semi-insulating SiC substrate M Kaneko, T Kimoto IEEE Electron Device Letters 39 (5), 723-726, 2018 | 42 | 2018 |
| Normally-off 400° C operation of n-and p-JFETs with a side-gate structure fabricated by ion implantation into a high-purity semi-insulating SiC substrate M Nakajima, M Kaneko, T Kimoto IEEE Electron Device Letters 40 (6), 866-869, 2019 | 33 | 2019 |
| Formation of high-quality SiC (0001)/SiO2 structures by excluding oxidation process with H2 etching before SiO2 deposition and high-temperature N2 annealing K Tachiki, M Kaneko, T Kobayashi, T Kimoto Applied Physics Express 13 (12), 121002, 2020 | 31 | 2020 |
| Experimental determination of impact ionization coefficients along< 1120> in 4H-SiC D Stefanakis, X Chi, T Maeda, M Kaneko, T Kimoto IEEE Transactions on Electron Devices 67 (9), 3740-3744, 2020 | 18 | 2020 |
| Optical properties of highly strained AlN coherently grown on 6H-SiC (0001) M Kaneko, H Okumura, R Ishii, M Funato, Y Kawakami, T Kimoto, J Suda Applied physics express 6 (6), 062604, 2013 | 17 | 2013 |
| SiC complementary junction field-effect transistor logic gate operation at 623 K M Kaneko, M Nakajima, Q Jin, T Kimoto IEEE Electron Device Letters 43 (7), 997-1000, 2022 | 16 | 2022 |
| Electron mobility along< 0001> and< 11̅00> directions in 4H-SiC over a wide range of donor concentration and temperature R Ishikawa, M Hara, H Tanaka, M Kaneko, T Kimoto Applied Physics Express 14 (6), 061005, 2021 | 15 | 2021 |
| Mobility enhancement in heavily doped 4H-SiC (0001),(112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process K Tachiki, K Mikami, K Ito, M Kaneko, T Kimoto Applied Physics Express 15 (7), 071001, 2022 | 14 | 2022 |
| Tunneling current in 4H-SiC pn junction diodes M Kaneko, X Chi, T Kimoto IEEE Transactions on Electron Devices 67 (8), 3329-3334, 2020 | 14 | 2020 |
| Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures M Hara, M Kaneko, T Kimoto Japanese Journal of Applied Physics 60 (SB), SBBD14, 2021 | 11 | 2021 |
| SiC vertical-channel n-and p-JFETs fully fabricated by ion implantation M Kaneko, U Grossner, T Kimoto Materials Science Forum 963, 841-844, 2019 | 11 | 2019 |
| Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes M Hara, H Tanaka, M Kaneko, T Kimoto Applied Physics Letters 120 (17), 2022 | 9 | 2022 |
| Experimental study on short-channel effects in double-gate silicon carbide JFETs M Kaneko, M Nakajima, Q Jin, T Kimoto IEEE Transactions on Electron Devices 67 (10), 4538-4540, 2020 | 9 | 2020 |
| Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy M Kaneko, T Kimoto, J Suda Applied Physics Express 9 (2), 025502, 2016 | 9 | 2016 |
| Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC (112¯) M Kaneko, S Ueta, M Horita, T Kimoto, J Suda Applied Physics Letters 112 (1), 2018 | 8 | 2018 |
| Lateral spreads of ion-implanted Al and P atoms in silicon carbide Q Jin, M Nakajima, M Kaneko, T Kimoto Japanese Journal of Applied Physics 60 (5), 051001, 2021 | 7 | 2021 |
| Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC M Hara, M Kaneko, T Kimoto Applied Physics Express 16 (2), 021003, 2023 | 5 | 2023 |
| Carrier trapping effects on forward characteristics of SiC pin diodes fabricated on high-purity semi-insulating substrates K Takahashi, H Tanaka, M Kaneko, T Kimoto IEEE Transactions on Electron Devices 69 (4), 1989-1994, 2022 | 5 | 2022 |
| Physics and Innovative technologies in SiC power devices T Kimoto, M Kaneko, K Tachiki, K Ito, R Ishikawa, X Chi, D Stefanakis, ... 2021 IEEE International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 2021 | 5 | 2021 |
