| Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs W Tang, J Zhou, G Yu, X Wei, W Tang, L Zhang, W Liu, T Chen, Z Yu, ... Applied Physics Express 15 (7), 076502, 2022 | 7 | 2022 |
| Implementation of recessed gate normally off GaN metal–insulator–semiconductor high electron mobility transistors by electrodeless photoelectrochemical etching W Liu, G Yu, J Zhou, Z Yu, X Wei, W Tang, L Zhang, B Zhang ACS Applied Electronic Materials 4 (3), 897-902, 2022 | 4 | 2022 |
| Study of enhancement-mode GaN pFET with H plasma treated gate recess X Gao, G Yu, J Zhou, Z Wang, Y Li, J Zhang, X Liang, Z Zeng, B Zhang Journal of Semiconductors 44 (11), 112801, 2023 | 3 | 2023 |
| Comparative analysis of the GaN nonpolar plane morphology by wet treatment and its effect on electrical properties in trench MOSFET J Zhou, W Tang, T Ju, H Wang, G Yu, X Zhou, L Zhang, K Xu, X Zhang, ... ACS Applied Materials & Interfaces 15 (21), 26159-26165, 2023 | 3 | 2023 |
| Highly reliable temperature sensor based on p-GaN/AlGaN/GaN hybrid anode diode with wide operation temperature from 73 K to 573 K A Yang, X Wei, W Shen, Y Hu, T Chen, H Wang, J Zhou, R Xing, X Zhang, ... Crystals 13 (4), 620, 2023 | 3 | 2023 |
| Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching Y Li, G Yu, H Wang, J Zhou, Z Wang, R Xing, S Lu, A Yang, B Zhang, ... Applied Physics Express 17 (1), 011004, 2023 | 2 | 2023 |
| Investigation of temperature-dependent polarization properties in grating-gate AlGaN/GaN heterostructures by Drude conductivity at THz frequency R Xing, H Wang, J Zhou, A Yang, Y Li, G Yu, Z Zeng, X Zhang, B Zhang Optical Engineering 62 (6), 065108-065108, 2023 | 2 | 2023 |
| Polarization properties in GaN double-channel HEMTs at mid-infrared frequencies R Xing, H Guo, G Yu, J Zhou, A Yang, S Dai, Z Zeng, X Zhang, B Zhang Plasmonics 19 (3), 1121-1130, 2024 | 1 | 2024 |
| High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing … B Guo, G Yu, L Zhang, J Zhou, Z Wang, R Xing, A Yang, Y Li, B Liu, ... Crystals 14 (3), 253, 2024 | | 2024 |
| Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by … Y Li, J Zhou, R Xing, S Lu, A Yang, B Guo, B Liu, Z Du, G Yu, Z Zeng, ... ACS Applied Electronic Materials 6 (1), 150-154, 2024 | | 2024 |
| Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate R Xing, P Zhang, H Guo, G Yu, J Zhou, A Yang, S Dai, Z Zeng, X Zhang, ... Plasmonics, 1-8, 2024 | | 2024 |
| Comparing Electrical Performance of Lateral GaN Schottky Barrier Diode with A-Plane () and M-Plane () Nonpolar Sidewall Contact J Zhou, G Yu, C Hao, X Zhang 2023 20th China International Forum on Solid State Lighting & 2023 9th …, 2023 | | 2023 |
| Annealing Process on MOS channel Properties for Quasi‐Vertical GaN‐on‐Sapphire Trench MOSFET J Zhou, A Yang, G Yu, R Xing, B Guo, C Hao, Y Li, B Liu, H Yue, J Jiang, ... physica status solidi (RRL)–Rapid Research Letters, 0 | | |
