| Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit K Xia, G Niu, DC Sheridan, SL Sweeney IEEE transactions on electron devices 53 (3), 515-522, 2006 | 23 | 2006 |
| Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTs G Niu, K Xia, D Sheridan, DL Harame 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of …, 2004 | 20 | 2004 |
| A new approach to implementing high-frequency correlated noise for bipolar transistor compact modeling K Xia, G Niu, Z Xu IEEE transactions on electron devices 59 (2), 302-308, 2011 | 15 | 2011 |
| An improved on-chip 4-port parasitics de-embedding method with application to RF CMOS X Wei, K Xia, G Niu, Y Li, SL Sweeney, Q Liang, X Wang, SS Taylor 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems …, 2007 | 15 | 2007 |
| Discussions and extension of van Vliet’s noise model for high speed bipolar transistors K Xia, G Niu Solid-state electronics 53 (3), 349-354, 2009 | 13 | 2009 |
| JFETIDG: A Compact Model for Independent Dual-Gate JFETs With Junction or MOS Gates K Xia, C McAndrew IEEE Transactions on Electron Devices 65 (2), 2018 | 11 | 2018 |
| Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling K Xia, G Niu Solid-state electronics 54 (12), 1566-1571, 2010 | 11 | 2010 |
| PSPHV: A Surface-Potential-Based Model for LDMOS Transistors K Xia, CC McAndrew, R van Langevelde, GDJ Smit, S Andries J. IEEE Trans. Electron Devices 66 (12), 2019 | 10 | 2019 |
| Dual-Gate JFET Modeling II: Source Pinchoff Voltage and Complete Ids Modeling Formalism K Xia, CC McAndrew, B Grote Electron Devices, IEEE Transactions on, 2016 | 10* | 2016 |
| Ratio based direct extraction of small-signal parameters for SiGe HBTs K Xia, G Niu, D Sheridan, WE Ansley Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 …, 2004 | 10 | 2004 |
| Improved RF noise modeling for silicon-germanium heterojunction bipolar transistors K Xia | 9 | 2006 |
| Smoothing globally continuous piecewise functions based on limiting functions for device compact modeling K Xia Journal of Computational Electronics 18 (3), 2019 | 7 | 2019 |
| Impact of collector-base space charge region on rf noise in bipolar transistors K Xia, G Niu 2006 Bipolar/BiCMOS Circuits and Technology Meeting, 1-4, 2006 | 7 | 2006 |
| Input non-quasi static effect on small signal parameter extraction and noise modeling for SiGe HBTs K Xia, G Niu, D Sheridan, S Sweeney Proc. of the IEEE BCTM, 180-183, 2005 | 7 | 2005 |
| Modeling the distributive effects of RC transmission line using recursive segmentation and applications to MOSFETs and BJTs K Xia IEEE Transactions on Electron Devices 63 (9), 3385-3392, 2016 | 6 | 2016 |
| Dual-Gate JFET Modeling I: Generalization to Include MOS Gates and Efficient Method to Calculate Drain–Source Saturation Voltage K Xia, CC McAndrew, B Grote Electron Devices, IEEE Transactions on, 2016 | 6 | 2016 |
| New C^∞ functions for drain-source voltage clamping in transistor modeling K Xia IEEE Trans. on Electron Devices 67 (4), 2020 | 4 | 2020 |
| Improved modeling of LDMOS with non-uniform lateral channel doping K Xia, CC McAndrew, R van Langevelde, GDJ Smit, AJ Scholten 2019 Electron Devices Technology and Manufacturing Conference (EDTM), 35-37, 2019 | 4 | 2019 |
| JFETIDG: a compact model for independent dual-gate JFETs K Xia, CC McAndrew, H Sheng Proc. IEEE Electron Devices Technology and Manufacturing Conference (EDTM …, 2017 | 4 | 2017 |
| Input non-quasi-static effect in SiGe HBTs and its impact on noise modeling K Xia, G Niu, D Sheridan, S Sweeney Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005 …, 2005 | 4 | 2005 |
