| High-efficiency broadband meta-hologram with polarization-controlled dual images WT Chen, KY Yang, CM Wang, YW Huang, G Sun, ID Chiang, CY Liao, ... Nano letters 14 (1), 225-230, 2014 | 818 | 2014 |
| Aluminum plasmonic multicolor meta-hologram YW Huang, WT Chen, WY Tsai, PC Wu, CM Wang, G Sun, DP Tsai Nano letters 15 (5), 3122-3127, 2015 | 609 | 2015 |
| Active dielectric metasurface based on phase‐change medium CH Chu, ML Tseng, J Chen, PC Wu, YH Chen, HC Wang, TY Chen, ... Laser & Photonics Reviews 10 (6), 986-994, 2016 | 421 | 2016 |
| Versatile polarization generation with an aluminum plasmonic metasurface PC Wu, WY Tsai, WT Chen, YW Huang, TY Chen, JW Chen, CY Liao, ... Nano letters 17 (1), 445-452, 2017 | 394 | 2017 |
| Advances in optical metasurfaces: fabrication and applications VC Su, CH Chu, G Sun, DP Tsai Optics express 26 (10), 13148-13182, 2018 | 295 | 2018 |
| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016 | 242 | 2016 |
| Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 2014 | 225 | 2014 |
| Metalenses: advances and applications ML Tseng, HH Hsiao, CH Chu, MK Chen, G Sun, AQ Liu, DP Tsai Advanced Optical Materials 6 (18), 1800554, 2018 | 215 | 2018 |
| Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure mid-infrared laser G Sun, RA Soref, HH and Cheng Journal of Applied Physics 108, 033107, 2010 | 204 | 2010 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 196 | 2017 |
| Electrically injected GeSn lasers on Si operating up to 100 K Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ... Optica 7 (8), 924-928, 2020 | 182 | 2020 |
| Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... ACS Photonics 6 (11), 2807-2815, 2019 | 182 | 2019 |
| GeSn-based pin photodiodes with strained active layer on a Si wafer HH Tseng, H Li, V Mashanov, YJ Yang, HH Cheng, GE Chang, RA Soref, ... Applied Physics Letters 103 (23), 2013 | 172 | 2013 |
| Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode G Sun, RA Soref, HH Cheng Optics express 18 (19), 19957-19965, 2010 | 169 | 2010 |
| In search of the elusive lossless metal JB Khurgin, G Sun Applied Physics Letters 96 (18), 2010 | 164 | 2010 |
| Practical enhancement of photoluminescence by metal nanoparticles G Sun, JB Khurgin, RA Soref Applied Physics Letters 94 (10), 2009 | 163 | 2009 |
| Comparative analysis of spasers, vertical-cavity surface-emitting lasers and surface-plasmon-emitting diodes JB Khurgin, G Sun Nature Photonics 8 (6), 468-473, 2014 | 161 | 2014 |
| Practicable enhancement of spontaneous emission using surface plasmons G Sun, JB Khurgin, RA Soref Applied physics letters 90 (11), 2007 | 155 | 2007 |
| Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016 | 145 | 2016 |
| Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016 | 143 | 2016 |
