| InGaN/GaN light-emitting diode with a polarization tunnel junction ZH Zhang, S Tiam Tan, Z Kyaw, Y Ji, W Liu, Z Ju, N Hasanov, X Wei Sun, ... Applied Physics Letters 102 (19), 2013 | 125 | 2013 |
| Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers ZH Zhang, W Liu, Z Ju, S Tiam Tan, Y Ji, Z Kyaw, X Zhang, L Wang, ... Applied Physics Letters 104 (24), 2014 | 84 | 2014 |
| On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes ZH Zhang, ST Tan, Z Ju, W Liu, Y Ji, Z Kyaw, Y Dikme, XW Sun, HV Demir Journal of Display Technology 9 (4), 226-233, 2012 | 64 | 2012 |
| Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer ZH Zhang, ST Tan, W Liu, Z Ju, K Zheng, Z Kyaw, Y Ji, N Hasanov, ... Optics express 21 (4), 4958-4969, 2013 | 61 | 2013 |
| Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, ZB Kyaw, XL Zhang, SP Lu, ... Applied Physics Letters 102 (24), 2013 | 50 | 2013 |
| Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering ZH Zhang, Z Ju, W Liu, ST Tan, Y Ji, Z Kyaw, X Zhang, N Hasanov, ... Optics letters 39 (8), 2483-2486, 2014 | 47 | 2014 |
| Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier Y Ji, ZH Zhang, ST Tan, ZG Ju, Z Kyaw, N Hasanov, W Liu, XW Sun, ... Optics letters 38 (2), 202-204, 2013 | 47 | 2013 |
| InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination ZH Zhang, W Liu, Z Ju, ST Tan, Y Ji, Z Kyaw, X Zhang, L Wang, XW Sun, ... Applied Physics Letters 105 (3), 2014 | 46 | 2014 |
| On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer ZG Ju, ST Tan, ZH Zhang, Y Ji, Z Kyaw, Y Dikme, XW Sun, HV Demir Applied Physics Letters 100 (12), 2012 | 46 | 2012 |
| Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency ZH Zhang, W Liu, Z Ju, S Tiam Tan, Y Ji, X Zhang, L Wang, Z Kyaw, ... Applied Physics Letters 104 (25), 2014 | 41 | 2014 |
| Advantages of the blue InGaN/GaN light-emitting diodes with an AlGaN/GaN/AlGaN quantum well structured electron blocking layer ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, Z Kyaw, XL Zhang, SP Lu, ... Acs Photonics 1 (4), 377-381, 2014 | 41 | 2014 |
| p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas ZH Zhang, S Tiam Tan, Z Kyaw, W Liu, Y Ji, Z Ju, X Zhang, X Wei Sun, ... Applied Physics Letters 103 (26), 2013 | 41 | 2013 |
| On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes ZH Zhang, W Liu, ST Tan, Z Ju, Y Ji, Z Kyaw, X Zhang, N Hasanov, B Zhu, ... Optics Express 22 (103), A779-A789, 2014 | 37 | 2014 |
| On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer ZH Zhang, Y Ji, W Liu, S Tiam Tan, Z Kyaw, Z Ju, X Zhang, N Hasanov, ... Applied Physics Letters 104 (7), 2014 | 37 | 2014 |
| Nonradiative recombination—critical in choosing quantum well number for InGaN/GaN light-emitting diodes YP Zhang, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, LC Wang, ... Optics Express 23 (3), A34-A42, 2015 | 31 | 2015 |
| Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes Y Ji, ZH Zhang, Z Kyaw, S Tiam Tan, Z Gang Ju, X Liang Zhang, W Liu, ... Applied Physics Letters 103 (5), 2013 | 28 | 2013 |
| A PN-type quantum barrier for InGaN/GaN light emitting diodes ZH Zhang, ST Tan, Y Ji, W Liu, Z Ju, Z Kyaw, XW Sun, HV Demir Optics express 21 (13), 15676-15685, 2013 | 26 | 2013 |
| A hole modulator for InGaN/GaN light-emitting diodes ZH Zhang, Z Kyaw, W Liu, Y Ji, L Wang, ST Tan, XW Sun, HV Demir Applied Physics Letters 106 (6), 2015 | 25 | 2015 |
| Low thermal-mass LEDs: size effect and limits S Lu, W Liu, ZH Zhang, ST Tan, Z Ju, Y Ji, X Zhang, Y Zhang, B Zhu, ... Optics Express 22 (26), 32200-32207, 2014 | 23 | 2014 |
| Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes Z Kyaw, ZH Zhang, W Liu, S Tiam Tan, Z Gang Ju, X Liang Zhang, Y Ji, ... Applied Physics Letters 104 (16), 2014 | 18 | 2014 |
