| A 90 nm CMOS low-power 60 GHz transceiver with integrated baseband circuitry C Marcu, D Chowdhury, C Thakkar, JD Park, LK Kong, M Tabesh, Y Wang, ... IEEE journal of solid-state circuits 44 (12), 3434-3447, 2009 | 458 | 2009 |
| A 260 GHz fully integrated CMOS transceiver for wireless chip-to-chip communication JD Park, S Kang, SV Thyagarajan, E Alon, AM Niknejad 2012 Symposium on VLSI Circuits (VLSIC), 48-49, 2012 | 219 | 2012 |
| Negative capacitance in organic/ferroelectric capacitor to implement steep switching MOS devices J Jo, WY Choi, JD Park, JW Shim, HY Yu, C Shin Nano letters 15 (7), 4553-4556, 2015 | 202 | 2015 |
| Vertical tunnel FET: Design optimization with triple metal-gate layers E Ko, H Lee, JD Park, C Shin IEEE Transactions on Electron Devices 63 (12), 5030-5035, 2016 | 106 | 2016 |
| A compact circularly polarized MIMO dielectric resonator antenna over electromagnetic band-gap surface for 5G applications HN Chen, JM Song, JD Park IEEE Access 7, 140889-140898, 2019 | 83 | 2019 |
| A 0.38 THz fully integrated transceiver utilizing a quadrature push-push harmonic circuitry in SiGe BiCMOS JD Park, S Kang, AM Niknejad IEEE Journal of Solid-State Circuits 47 (10), 2344-2354, 2012 | 81 | 2012 |
| A compact multiple notched ultra-wide band antenna with an analysis of the CSRR-TO-CSRR coupling for portable UWB applications MU Rahman, DS Ko, JD Park Sensors 17 (10), 2174, 2017 | 69 | 2017 |
| Isolation enhancement of wide-band MIMO array antennas utilizing resistive loading JD Park, M Rahman, HN Chen IEEE Access 7, 81020-81026, 2019 | 63 | 2019 |
| The smallest form factor UWB antenna with quintuple rejection bands for IoT applications utilizing RSRR and RCSRR MU Rahman, JD Park Sensors 18 (3), 911, 2018 | 58 | 2018 |
| Study of random variation in germanium-source vertical tunnel FET H Lee, JD Park, C Shin IEEE Transactions on Electron Devices 63 (5), 1827-1834, 2016 | 48 | 2016 |
| Study of Work-Function Variation in High-/Metal-Gate Gate-All-Around Nanowire MOSFET H Nam, Y Lee, JD Park, C Shin IEEE Transactions on Electron Devices 63 (8), 3338-3341, 2016 | 41 | 2016 |
| An efficient method of eliminating the range ambiguity for a low-cost FMCW radar using VCO tuning characteristics JD Park, WJ Kim IEEE transactions on microwave theory and techniques 54 (10), 3623-3629, 2006 | 38 | 2006 |
| A compact tri-band bandpass filter using two stub-loaded dual mode resonators MU Rahman, JD Park Progress In Electromagnetics Research M 64, 201-209, 2018 | 35 | 2018 |
| A 0.38 THz fully integrated transceiver utilizing quadrature push-push circuitry JD Park, S Kang, AM Niknejad 2011 Symposium on VLSI Circuits-Digest of Technical Papers, 22-23, 2011 | 34 | 2011 |
| Study of Work-Function Variation for High- /Metal-Gate Ge-Source Tunnel Field-Effect Transistors Y Lee, H Nam, JD Park, C Shin IEEE Transactions on Electron Devices 62 (7), 2143-2147, 2015 | 26 | 2015 |
| A 16.3 dBm 14.1% PAE 28-dB Gain -Band Power Amplifier With Inductive Feedback in 65-nm CMOS VS Trinh, JD Park IEEE Microwave and Wireless Components Letters 30 (2), 193-196, 2020 | 24 | 2020 |
| A compact tri‐band bandpass filter utilizing double mode resonator with 6 transmission zeros MU Rahman, DS Ko, JD Park Microwave and Optical Technology Letters 60 (7), 1767-1771, 2018 | 24 | 2018 |
| A full X-band phased-array transmit/receive module chip in 65-nm CMOS technology H Nam, VV Nguyen, VS Trinh, JM Song, BH Lee, JD Park IEEE Access 8, 76182-76192, 2020 | 19 | 2020 |
| A 20.5-dBm -Band Power Amplifier With a 1.2-V Supply in 65-nm CMOS Technology VS Trinh, H Nam, JD Park IEEE Microwave and Wireless Components Letters 29 (3), 234-236, 2018 | 19 | 2018 |
| Performance Booster for Vertical Tunnel Field-Effect Transistor: Field-Enhanced High- Layer H Lee, JD Park, C Shin IEEE Electron Device Letters 37 (11), 1383-1386, 2016 | 19 | 2016 |
Ali M NIKNEJADUC Berkeley在 berkeley.edu 的电子邮件经过验证
