| Strain-induced band gap shrinkage in Ge grown on Si substrate Y Ishikawa, K Wada, DD Cannon, J Liu, HC Luan, LC Kimerling Applied Physics Letters 82 (13), 2044-2046, 2003 | 512 | 2003 |
| Tensile strained Ge pin photodetectors on Si platform for C and L band telecommunications J Liu, DD Cannon, K Wada, Y Ishikawa, S Jongthammanurak, ... Applied Physics Letters 87 (1), 2005 | 286 | 2005 |
| Deformation potential constants of biaxially tensile stressed epitaxial films on J Liu, DD Cannon, K Wada, Y Ishikawa, DT Danielson, ... Physical Review B—Condensed Matter and Materials Physics 70 (15), 155309, 2004 | 218 | 2004 |
| Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate Y Ishikawa, K Wada, J Liu, DD Cannon, HC Luan, J Michel, LC Kimerling Journal of applied physics 98 (1), 2005 | 217 | 2005 |
| Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications DD Cannon, J Liu, Y Ishikawa, K Wada, DT Danielson, ... Applied Physics Letters 84 (6), 906-908, 2004 | 211 | 2004 |
| Ge photodetectors K Wada, LC Kimerling, Y Ishikawa, DD Cannon, J Liu US Patent 6,812,495, 2004 | 133 | 2004 |
| Enhanced direct bandgap emission in germanium by micromechanical strain engineering PH Lim, S Park, Y Ishikawa, K Wada Optics Express 17 (18), 16358-16365, 2009 | 127 | 2009 |
| Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators S Park, T Tsuchizawa, T Watanabe, H Shinojima, H Nishi, K Yamada, ... Optics express 18 (8), 8412-8421, 2010 | 116 | 2010 |
| High-performance silicon photonics technology for telecommunications applications K Yamada, T Tsuchizawa, H Nishi, R Kou, T Hiraki, K Takeda, H Fukuda, ... Science and Technology of Advanced Materials 15 (2), 024603, 2014 | 96 | 2014 |
| Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver H Nishi, T Tsuchizawa, R Kou, H Shinojima, T Yamada, H Kimura, ... Optics Express 20 (8), 9312-9321, 2012 | 85 | 2012 |
| Comparative study on skin-necrotizing effect of scirpene metabolites of Fusaria. Y Ueno, Y Ishikawa, K Amakai, M Nakajima, M Saito, M Enomoto, ... | 78 | 1970 |
| Silicidation-induced band gap shrinkage in Ge epitaxial films on Si J Liu, DD Cannon, K Wada, Y Ishikawa, S Jongthammanurak, ... Applied Physics Letters 84 (5), 660-662, 2004 | 76 | 2004 |
| Towards monolithic integration of germanium light sources on silicon chips S Saito, AZ Al-Attili, K Oda, Y Ishikawa Semiconductor Science and Technology 31 (4), 043002, 2016 | 75 | 2016 |
| Thermal agglomeration of single-crystalline Si layer on buried in ultrahigh vacuum R Nuryadi, Y Ishikawa, Y Ono, M Tabe Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 75 | 2002 |
| Formation and ordering of self-assembled Si islands by ultrahigh vacuum annealing of ultrathin bonded silicon-on-insulator structure R Nuryadi, Y Ishikawa, M Tabe Applied surface science 159, 121-126, 2000 | 75 | 2000 |
| Germanium for silicon photonics Y Ishikawa, K Wada Thin Solid Films 518 (6), S83-S87, 2010 | 74 | 2010 |
| Toxicological approaches to the metabolites of Fusaria. I. Screening of toxic strains. Y Ueno, Y Ishikawa, M Nakajima, K Sakai, K Ishii, H Tsunoda, M Saito, ... | 67 | 1971 |
| Kink defects and Fermi level pinning on (2× 4) reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy … Y Ishikawa, T Fukui, H Hasegawa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1997 | 64 | 1997 |
| Strain induced bandgap and refractive index variation of silicon J Cai, Y Ishikawa, K Wada Optics express 21 (6), 7162-7170, 2013 | 63 | 2013 |
| Ambipolar Coulomb blockade characteristics in a two-dimensional Si multidot device R Nuryadi, H Ikeda, Y Ishikawa, M Tabe IEEE transactions on nanotechnology 2 (4), 231-235, 2003 | 55 | 2003 |
