| Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser IEEE Electron Device Letters 37 (1), 84-87, 2015 | 85 | 2015 |
| Modeling of hot-carrier degradation in nLDMOS devices: Different approaches to the solution of the Boltzmann transport equation P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ... IEEE Transactions on Electron Devices 62 (6), 1811-1818, 2015 | 42 | 2015 |
| The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n-and p-channel LDMOS devices P Sharma, S Tyaginov, M Jech, Y Wimmer, F Rudolf, H Enichlmair, ... Solid-State Electronics 115, 185-191, 2016 | 17 | 2016 |
| Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach P Sharma, S Tyaginov, SE Rauch, J Franco, A Makarov, MI Vexler, ... IEEE Electron Device Letters 38 (2), 160-163, 2016 | 9 | 2016 |
| Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approach P Sharma, M Jech, S Tyaginov, F Rudolf, K Rupp, H Enichlmair, JM Park, ... 2015 International Conference on Simulation of Semiconductor Processes and …, 2015 | 8 | 2015 |
| Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, H Enichlmair, ... Microelectronics Reliability 55 (9-10), 1427-1432, 2015 | 4 | 2015 |
| Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices P Sharma, S Tyaginov, Y Wimmer, F Rudolf, K Rupp, M Bina, ... 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 3 | 2015 |
| On the effect of interface traps on the carrier distribution function during hot-carrier degradation SE Tyaginov, A Makarov, M Jech, J Franco, P Sharma, B Kaczer, ... 2016 IEEE International Integrated Reliability Workshop (IIRW), 95-98, 2016 | 2 | 2016 |
| On the limits of applicability of drift-diffusion based hot carrier degradation modeling M Jech, P Sharma, S Tyaginov, F Rudolf, T Grasser Japanese Journal of Applied Physics 55 (4S), 04ED14, 2016 | 2 | 2016 |
| A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion scheme P Sharma, S Tyaginov, Y Wimmer, F Rudolf, H Enichlmair, JM Park, ... EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015 | 1 | 2015 |
| Predictive and efficient modeling of hot carrier degradation with drift-diffusion based carrier transport models P Sharma Technische Universität Wien, 2020 | | 2020 |
| A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs P Sharma, S Tyaginov, SE Rauch, J Franco, B Kaczer, A Makarov, ... 2016 46th European Solid-State Device Research Conference (ESSDERC), 428-431, 2016 | | 2016 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEE在 iue.tuwien.ac.at 的电子邮件经过验证
