| MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering R Ma, H Zhang, Y Yoo, ZP Degregorio, L Jin, P Golani, ... ACS nano 13 (7), 8035-8046, 2019 | 97 | 2019 |
| High-Performance Dual-Gated Single-Layer WS2 MOSFETs With Bi Contacts L Jin, SJ Koester IEEE Electron Device Letters 43 (4), 639-642, 2022 | 18 | 2022 |
| Modularly constructed polyhedral oligomeric silsesquioxane-based giant molecules for unconventional nanostructure fabrication J Jiang, Y Wang, L Jin, CH Hsu, S Zhang, J Mao, W Yin, T Li, B Ni, Z Su, ... ACS Applied Nano Materials 3 (3), 2952-2958, 2020 | 17 | 2020 |
| Contact Gating in Dual-Gated WS2 MOSFETs With Semi-Metallic Bi Contacts L Jin, SJ Koester IEEE Electron Device Letters 43 (9), 1575-1578, 2022 | 6 | 2022 |
| Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts JJPM Schulpen, CHX Lam, RA Dawley, R Li, L Jin, T Ma, WMM Kessels, ... ACS Applied Nano Materials 7 (7), 7395-7407, 2024 | 1 | 2024 |
| High-Performance WS2 MOSFETs with Bilayer WS2 Contacts L Jin, J Wen, M Odlyzko, N Seaton, R Li, N Haratipour, SJ Koester ACS omega 9 (29), 32159-32166, 2024 | | 2024 |
| Correction to Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalysts JJPM Schulpen, CHX Lam, RA Dawley, R Li, L Jin, T Ma, WMM Kessels, ... ACS Applied Nano Materials 7 (10), 12205-12206, 2024 | | 2024 |
