| Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers JS Li, CC Chiang, X Xia, TJ Yoo, F Ren, H Kim, SJ Pearton Applied Physics Letters 121 (4), 2022 | 79 | 2022 |
| Annealing temperature dependence of band alignment of NiO/β-Ga2O3 X Xia, JS Li, CC Chiang, TJ Yoo, F Ren, H Kim, SJ Pearton Journal of Physics D: Applied Physics 55 (38), 385105, 2022 | 40 | 2022 |
| Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV JS Li, HH Wan, CC Chiang, X Xia, TJ Yoo, H Kim, F Ren, SJ Pearton Crystals 13 (6), 886, 2023 | 25 | 2023 |
| Superior high temperature performance of 8 kV NiO/Ga 2 O 3 vertical heterojunction rectifiers JS Li, CC Chiang, X Xia, HH Wan, F Ren, SJ Pearton Journal of Materials Chemistry C 11 (23), 7750-7757, 2023 | 23 | 2023 |
| Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers JS Li, CC Chiang, X Xia, HH Wan, F Ren, SJ Pearton Journal of Vacuum Science & Technology A 41 (4), 2023 | 22 | 2023 |
| Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers JS Li, CC Chiang, X Xia, F Ren, SJ Pearton Journal of Vacuum Science & Technology A 40 (6), 2022 | 21 | 2022 |
| Radiation damage in the ultra-wide bandgap semiconductor Ga2O3 X Xia, JS Li, R Sharma, F Ren, MAJ Rasel, S Stepanoff, N Al-Mamun, ... ECS Journal of Solid State Science and Technology 11 (9), 095001, 2022 | 18 | 2022 |
| Investigating the backbone conformation and configuration effects for donor–acceptor conjugated polymers with ladder-type structures synthesized through Aldol polycondensation YW Huang, YC Lin, JS Li, WC Chen, CC Chueh Journal of Materials Chemistry C 9 (30), 9473-9483, 2021 | 15 | 2021 |
| 7.5 kV, 6.2 GW cm− 2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013 JS Li, CC Chiang, X Xia, HH Wan, F Ren, SJ Pearton Journal of Vacuum Science & Technology A 41 (3), 2023 | 14 | 2023 |
| Improving mobility–stretchability properties of polythiophene derivatives through ester-substituted, biaxially extended conjugated side chains YC Lin, YW Huang, YS Wu, JS Li, YF Yang, WC Chen, CC Chueh ACS Applied Polymer Materials 3 (3), 1628-1637, 2021 | 14 | 2021 |
| Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3 JS Li, X Xia, CC Chiang, DC Hays, BP Gila, V Craciun, F Ren, SJ Pearton Journal of Vacuum Science & Technology A 41 (1), 2023 | 12 | 2023 |
| NiO/β-(AlxGa1− x) 2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage> 7 kV HH Wan, JS Li, CC Chiang, X Xia, F Ren, HN Masten, JS Lundh, ... Journal of Vacuum Science & Technology A 41 (3), 2023 | 7 | 2023 |
| Ion energy dependence of dry etch damage depth in Ga2O3 Schottky rectifiers CC Chiang, X Xia, JS Li, F Ren, SJ Pearton Applied Surface Science 631, 157489, 2023 | 6 | 2023 |
| Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers JS Li, CC Chiang, X Xia, S Stepanoff, A Haque, DE Wolfe, F Ren, ... Journal of Applied Physics 133 (1), 2023 | 6 | 2023 |
| Thermal stability of band offsets of NiO/GaN X Xia, JS Li, CC Chiang, TJ Yoo, F Ren, H Kim, SJ Pearton Journal of Vacuum Science & Technology A 40 (5), 2022 | 6 | 2022 |
| 1 mm2, 3.6 kV, 4.8 A NiO/Ga2O3 Heterojunction Rectifiers JS Li, CC Chiang, X Xia, HH Wan, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 12 (8), 085001, 2023 | 5 | 2023 |
| Dynamic switching of 1.9 A/1.76 kV forward current NiO/β-Ga2O3 rectifiers JS Li, CC Chiang, X Xia, CT Tsai, F Ren, YT Liao, SJ Pearton ECS Journal of Solid State Science and Technology 11 (10), 105003, 2022 | 5 | 2022 |
| Selective wet and dry etching of NiO over β-Ga2O3 CC Chiang, X Xia, JS Li, F Ren, SJ Pearton ECS Journal of Solid State Science and Technology 11 (10), 104001, 2022 | 5 | 2022 |
| Structural influences of proquinoidal acceptor moieties on transistor performance and doping capability for diketopyrrolopyrrole-based dual-acceptor conjugated polymers YS Wu, JS Li, CY Chang, W He, T Michinobu, YC Lin, WC Chen, ... Journal of Materials Chemistry C 10 (47), 17936-17944, 2022 | 5 | 2022 |
| Pyrene-incorporated side chain in π-conjugated polymers for non-volatile transistor-type memory devices with improved stretchability YC Lin, CC Hung, CK Chen, YC Chiang, LC Hsu, JS Li, CC Chueh, ... ACS Applied Polymer Materials 3 (4), 2109-2119, 2021 | 5 | 2021 |
Fan RenUniversity of Florida, Bell Lab, AT&T在 che.ufl.edu 的电子邮件经过验证
