| A near-threshold 7T SRAM cell with high write and read margins and low write time for sub-20 nm FinFET technologies M Ansari, H Afzali-Kusha, B Ebrahimi, Z Navabi, A Afzali-Kusha, ... Integration 50, 91-106, 2015 | 78 | 2015 |
| A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement M Saremi, B Ebrahimi, A Afzali-Kusha, S Mohammadi Microelectronics Reliability 51 (12), 2069-2076, 2011 | 49 | 2011 |
| Statistical design optimization of FinFET SRAM using back-gate voltage B Ebrahimi, M Rostami, A Afzali-Kusha, M Pedram IEEE Transactions on Very Large Scale Integration (VLSI) Systems 19 (10 …, 2010 | 38 | 2010 |
| Process variation study of ground plane SOI MOSFET M Saremi, B Ebrahimi, AA Kusha, M Saremi 2nd Asia symposium on quality electronic design (ASQED), 66-69, 2010 | 37 | 2010 |
| A single-ended low leakage and low voltage 10T SRAM cell with high yield N Eslami, B Ebrahimi, E Shakouri, D Najafi | 36 | 2020 |
| Ground plane SOI MOSFET based SRAM with consideration of process variation M Saremi, B Ebrahimi, A Afzali-Kusha 2010 IEEE international conference of electron devices and solid-state …, 2010 | 30 | 2010 |
| Low standby power and robust FinFET based SRAM design B Ebrahimi, S Zeinolabedinzadeh, A Afzali-Kusha 2008 IEEE Computer Society Annual Symposium on VLSI, 185-190, 2008 | 28 | 2008 |
| Single-Ended 10T SRAM Cell with High Yield and Low Standby Power E Shakouri, B Ebrahimi, N Eslami, M Chahardori Circuits, Systems, and Signal Processing, 1-21, 2021 | 24 | 2021 |
| A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology S Sayyah Ensan, MH Moaiyeri, B Ebrahimi, S Hessabi, A Afzali-Kusha Journal of Computational Electronics 18, 519-526, 2019 | 23 | 2019 |
| A robust and low power 7T SRAM cell design K Mehrabi, B Ebrahimi, A Afzali-Kusha 2015 18th CSI International Symposium on Computer Architecture and Digital …, 2015 | 23 | 2015 |
| Robust FinFET SRAM design based on dynamic back-gate voltage adjustment B Ebrahimi, A Afzali-Kusha, H Mahmoodi Microelectronics Reliability 54 (11), 2604-2612, 2014 | 23 | 2014 |
| G4-FET modeling for circuit simulation by adaptive neuro-fuzzy training systems H Aghababa, B Ebrahimi, M Saremi, V Moalemi, B Forouzandeh IEICE Electronics Express 9 (10), 881-887, 2012 | 21 | 2012 |
| Probability calculation of read failures in nano-scaled SRAM cells under process variations H Aghababa, B Ebrahimi, A Afzali-Kusha, M Pedram Microelectronics Reliability 52 (11), 2805-2811, 2012 | 18 | 2012 |
| Low power and robust 8T/10T subthreshold SRAM cells B Ebrahimi, H Afzali-Kusha, A Afzali-Kusha 2012 International Conference on Synthesis, Modeling, Analysis and …, 2012 | 15 | 2012 |
| A high speed subthreshold SRAM cell design AR Ahmadimehr, B Ebrahimi, A Afzali-Kusha 2009 1st Asia Symposium on Quality Electronic Design, 9-13, 2009 | 15 | 2009 |
| Realistic CNFET based SRAM cell design for better write stability B Ebrahimi, A Afzali-Kusha 2009 1st Asia Symposium on Quality Electronic Design, 14-18, 2009 | 13 | 2009 |
| Ultra-low power FinFET based SRAM cell employing sharing current concept M Imani, M Jafari, B Ebrahimi, TS Rosing Microelectronics Reliability, 2015 | 11 | 2015 |
| A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages B Ebrahimi, R Asadpour, A Afzali‐Kusha, M Pedram International Journal of Circuit Theory and Applications 43 (12), 2011-2024, 2015 | 9 | 2015 |
| Low‐power data encoding/decoding for energy‐efficient static random access memory design G Pasandi, K Mehrabi, B Ebrahimi, SM Fakhraei, A Afzali‐Kusha, ... IET Circuits, Devices & Systems 13 (8), 1152-1159, 2019 | 8 | 2019 |
| An accurate analytical I–V model for sub-90-nm MOSFETs and its application to read static noise margin modeling B Afzal, B Ebrahimi, A Afzali-Kusha, M Pedram Journal of Zhejiang University SCIENCE C 13, 58-70, 2012 | 7 | 2012 |
Ali Afzali-KushaUniversity of Tehran在 ut.ac.ir 的电子邮件经过验证
