| High performance raised source/drain InAs/In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer S Lee, CY Huang, D Cohen-Elias, JJM Law, V Chobpattanna, S Krämer, ... Applied Physics Letters 103 (23), 2013 | 58 | 2013 |
| Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION= 482 µ A/µ m at IOFF= 100 nA/µ m and VDD= 0.5 V S Lee, CY Huang, D Cohen-Elias, BJ Thibeault, W Mitchell, ... IEEE Electron Device Lett 35 (6), 621-623, 2014 | 45 | 2014 |
| Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed-L Valleys SR Mehrotra, M Povolotskyi, DC Elias, T Kubis, JJM Law, MJW Rodwell, ... IEEE electron device letters 34 (9), 1196-1198, 2013 | 40 | 2013 |
| InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection Y Uliel, D Cohen-Elias, N Sicron, I Grimberg, N Snapi, Y Paltiel, M Katz Infrared Physics & Technology 84, 63-71, 2017 | 39 | 2017 |
| Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector D Cohen-Elias, Y Uliel, O Klin, N Snapi, E Weiss, I Shafir, O Westreich, ... Infrared Physics & Technology 84, 82-86, 2017 | 31 | 2017 |
| Record extrinsic transconductance (2.45 mS/µm at VDS= 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth S Lee, CY Huang, AD Carter, DC Elias, JJM Law, V Chobpattana, ... 2013 Symposium on VLSI Technology, T246-T247, 2013 | 26 | 2013 |
| Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode D Cohen-Elias, N Snapi, O Klin, E Weiss, S Shusterman, T Meir, M Katz Applied Physics Letters 111 (20), 2017 | 23 | 2017 |
| Controlling graphene work function by doping in a MOCVD reactor C Klein, D Cohen-Elias, G Sarusi Heliyon 4 (12), 2018 | 18 | 2018 |
| Improved performances InAs/AlSb Type-II superlattice photodiodes for eSWIR with Ldiff of 2.4 µm and QE of 38% at 300 K I Shafir, D Cohen-Elias, N Snapi, O Klin, E Weiss, N Sicron, M Katz Infrared Physics & Technology 105, 103210, 2020 | 16 | 2020 |
| Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector D Cohen-Elias, Y Uliel, N Cohen, I Shafir, O Westreich, M Katz Infrared Physics & Technology 85, 81-85, 2017 | 16 | 2017 |
| An Abrupt InP-GaInAs-InP DHBT DC Elias, S Kraus, A Gavrilov, S Cohen, N Buadana, V Sidorov, D Ritter IEEE electron device letters 26 (1), 14-16, 2004 | 15 | 2004 |
| Nanometer InP electron devices for VLSI and THz applications MJW Rodwell, S Lee, CY Huang, D Elias, V Chobpattanna, J Rode, ... 72nd Device Research Conference, 215-216, 2014 | 14 | 2014 |
| High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching S Lee, CY Huang, AD Carter, JJM Law, DC Elias, V Chobpattana, ... 2013 International Conference on Indium Phosphide and Related Materials …, 2013 | 14 | 2013 |
| Compound Semiconductor Devices-Kirk Effect in Bipolar Transistors With a Nonuniform Dopant Profile in the Collector DC Elias, D Ritter IEEE Electron Device Letters 27 (1), 25-27, 2006 | 14* | 2006 |
| High responsivity InGaAsSb p–n photodetector for extended SWIR detection I Shafir, N Snapi, D Cohen-Elias, A Glozman, O Klin, E Weiss, ... Applied Physics Letters 118 (6), 2021 | 13 | 2021 |
| Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy V Garbe, B Abendroth, H Stöcker, A Gavrilov, D Cohen‐Elias, S Mehari, ... Crystal Research and Technology 50 (6), 425-431, 2015 | 13 | 2015 |
| A fast avalanche Si diode with a 517 μm low-doped region AS Kesar, A Raizman, G Atar, S Zoran, S Gleizer, Y Krasik, D Cohen-Elias Applied Physics Letters 117 (1), 2020 | 11 | 2020 |
| Reduction of leakage current in In0. 53Ga0. 47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0. 56Sb0. 44 confinement layers CY Huang, S Lee, D Cohen-Elias, JJM Law, AD Carter, V Chobpattana, ... Applied Physics Letters 103 (20), 2013 | 11 | 2013 |
| An InP HBT-based oscillator monolithically integrated with a photodiode E Shumakher, T Magrisso, S Kraus, D Cohen-Elias, A Gavrilov, S Cohen, ... Journal of lightwave technology 26 (15), 2679-2683, 2008 | 11 | 2008 |
| Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy D Cohen-Elias, JJM Law, HW Chiang, A Sivananthan, C Zhang, ... 71st Device Research Conference, 1-2, 2013 | 7 | 2013 |
