| Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs BB Upadhyay, K Takhar, J Jha, S Ganguly, D Saha Solid-State Electronics 141, 1-6, 2018 | 16 | 2018 |
| Impact of relative gate position on DC and RF characteristics of high performance AlGaN/GaN HEMTs YK Yadav, BB Upadhyay, J Jha, S Ganguly, D Saha IEEE Transactions on Electron Devices 67 (10), 4141-4146, 2020 | 14 | 2020 |
| Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates S Emekar, J Jha, S Mukherjee, M Meer, K Takhar, D Saha, S Ganguly 2017 International Conference on Simulation of Semiconductor Processes and …, 2017 | 13 | 2017 |
| Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement S Surapaneni, J Jha, V Pendem, YK Yadav, S Ganguly, D Saha Nanotechnology 32 (45), 455202, 2021 | 7 | 2021 |
| Improvements from SiC substrate thinning in AlGaN/GaN HEMTs: disparate effects on contacts, access and channel regions B Parvez, J Jha, P Upadhyay, N Bhardwaj, Y Yadav, B Upadhyay, ... IEEE Electron Device Letters 42 (5), 684-687, 2021 | 6 | 2021 |
| Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors J Jha, BB Upadhyay, K Takhar, N Bhardwaj, S Ganguly, D Saha Journal of Applied Physics 124 (16), 2018 | 3 | 2018 |
| Geometric contribution leading to anomalous estimation of two-dimensional electron gas density in GaN based heterostructures BB Upadhyay, J Jha, K Takhar, S Ganguly, D Saha Journal of Applied Physics 123 (20), 2018 | 3 | 2018 |
| Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology J Jha, S Surapaneni, AS Kumar, S Ganguly, D Saha Solid-State Electronics 186, 108138, 2021 | 2 | 2021 |
| Off-state degradation and recovery in Oxide/AlGaN/GaN heterointerfaces: importance of band offset, electron, and hole trapping J Jha, M Meer, S Ganguly, D Saha ACS Applied Electronic Materials 2 (7), 2071-2077, 2020 | 2 | 2020 |
| GaN-based complementary inverter logic gate using InGaN/GaN superlattice capped enhancement-mode field-effect-transistors J Jha, S Ganguly, D Saha Nanotechnology 32 (31), 315206, 2021 | 1 | 2021 |
| High Power Broad C-band Amplifier Using AlGan/GaN Based High Electron Mobility Transistors J Jha, Y Yadav, B Upadhyay, S Surapaneni, N Bhardwaj, S Ganguly, ... 2021 8th International Conference on Electrical and Electronics Engineering …, 2021 | 1 | 2021 |
| A mixer architecture using GaN-based split-gate nanowire transistor J Jha, S Surapaneni, S Ganguly, D Saha Nanotechnology, 2024 | | 2024 |
| Rapid LUT Modelling Technique for GaN HEMT Based MMIC Technology P Chandra, R Saini, J Jha, Y Yadav, S Mukherjee, R Gandhi, R Laha, ... 2021 IEEE MTT-S International Microwave and RF Conference (IMARC), 1-4, 2021 | | 2021 |
| Multi-Finger High Power Gallium Nitride Based High Electron Mobility Transistors J Jha, S Surapaneni, A Kumar, S Ganguly, D Saha 2019 6th International Conference on Electrical and Electronics Engineering …, 2019 | | 2019 |
Bhanu B. UpadhyayGaN Device Characterization and Modelling, Infineon Technologies, Munich在 iitb.ac.in 的电子邮件经过验证
