| Thermodynamically metastable α -, ε - (or κ -), and γ -Ga 2 O 3 : From material growth to device applications M Biswas, H Nishinaka APL Materials 10, 060701, 2022 | 37 | 2022 |
| Passivation of Surface States of AlGaN Nanowires Using H3PO4 Treatment To Enhance the Performance of UV-LEDs and Photoanodes M Biswas, V Chavan, S Zhao, Z Mi, S Chakrabarti ACS Applied Nano Materials 1 (4), 1968-1975, 2018 | 14 | 2018 |
| Engineering of carrier localization in BGaAs SQW for novel intermediate band solar cells: Thermal annealing effect T Hidouri, M Biswas, I Mal, S Nasr, S Chakrabarti, DP Samajdar, F Saidi Solar Energy 199, 183-191, 2020 | 13 | 2020 |
| Ultrathin GaAsN matrix-induced reduced full width at half maximum of GaAsN/InAs/GaAsN dot-in-a-well heterostructures with extended emission wavelength M Biswas, A Balgarkashi, RL Makkar, A Bhatnagar, S Chakrabarti Journal of Luminescence 194, 341-345, 2018 | 7 | 2018 |
| Varying nitrogen background pressure; an efficient approach to improve electrical properties of MBE-grown GaAs1− xNx thin films with less atomic disorder M Biswas, N Shinde, RL Makkar, A Bhatnagar, S Chakrabarti Journal of Alloys and Compounds 695, 3163-3169, 2017 | 7 | 2017 |
| Growth of high quality (In, Ga) N films on O-face ZnO substrates by plasma-assisted molecular beam epitaxy K Khan, M Biswas, E Ahmadi AIP Advances 10 (7), 2020 | 6 | 2020 |
| Vertical strain-induced dot size uniformity and thermal stability of InAs/GaAsN/GaAs coupled quantum dots M Biswas, S Singh, A Balgarkashi, R Makkar, A Bhatnagar, S Sreedhara, ... Journal of Alloys and Compounds 748, 601-607, 2018 | 6 | 2018 |
| Defect annihilation-mediated enhanced activation energy of GaAs0. 979N0. 021-capped InAs/GaAs quantum dots by H− ion implantation M Biswas, S Singh, A Balgarkashi, RL Makkar, A Bhatnagar, ... Thin Solid Films 639, 73-77, 2017 | 4 | 2017 |
| Effects of rapid thermal annealing in InGaN/GaN quantum disk-in-GaN nanowire arrays M Biswas, R Kumar, A Chatterjee, Y Wu, Z Mi, P Bhattacharya, SK Pal, ... Journal of Luminescence 222, 117123, 2020 | 2 | 2020 |
| High nitrogen composition–induced low interfacial roughness of GaAs0. 978N0. 022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy M Biswas, B Tongbram, N Shinde, RL Makkar, A Bhatnagar, ... Materials Research Bulletin 88, 242-247, 2017 | 2 | 2017 |
| Impact of annealing temperature on structural, electrical and optical properties of epitaxial GaN thin films grown on sapphire substrates by PA-MBE M Biswas arXiv preprint arXiv:1509.00416, 2015 | 2 | 2015 |
| CAD model to predict the effect of radome on the characteristics of rectangular patch antenna M Biswas, S Banik, M Biswas, A Sukla Microwave and Optical Technology Letters 55 (10), 2460-2468, 2013 | 2 | 2013 |
| Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H-ion implantation and UV ozone treatment R Kumar, R Kumar, D Panda, M Biswas, S Upadhyay, D Das, S Zhao, ... Gallium Nitride Materials and Devices XIV 10918, 109180A, 2019 | 1 | 2019 |
| Annihilation of arsenic-nitrogen bonding defects in annealed InAs1− xNx quantum dots grown through nitrogen background pressure–controlled SS-MBE M Biswas, RL Makkar, A Bhatnagar, S Chakrabarti Journal of Alloys and Compounds 722, 287-292, 2017 | 1 | 2017 |
| A low temperature investigation of the optical properties of coupled InAs quantum dots with GaAsN/GaAs spacers A Balgarkashi, M Biswas, S Singh, D Das, A Bhatnagar, R Makkar, ... Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV …, 2017 | 1 | 2017 |
| Impact of rapid thermal annealing on dilute nitride (GaAsN) capped InAs/GaAs quantum dots exhibiting optical emission beyond~ 1.5 µm M Biswas, A Balgarkashi, S Singh, N Shinde, RL Makkar, A Bhatnagar, ... Nanophotonic Materials XIII 9919, 136-140, 2016 | 1 | 2016 |
| Epitaxial growth of monoclinic gallium oxide using molecular beam epitaxy M Biswas, E Ahmadi IOP Publishing Ltd., 2020 | | 2020 |
| Lattice Dynamics and Electron Transport in α-Ga2O3 A Sharma, M Biswas, E Ahmadi, U Singisetti Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Low-temperature photoluminescence studies in epitaxially-grown GaAsN/InAs/GaAsN quantum-dot-in-well structures emitting at 1.31 um A Balgarkashi, M Biswas, S Singh, D Das, N Shinde, RL Makkar, ... Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV …, 2017 | | 2017 |
| A low-temperature photoluminescence study of GaAs1-xNx/GaAs multiple quantum-wells M Biswas, A Balgarkashi, S Singh, N Shinde, RL Makkar, A Bhatnagar, ... Quantum Sensing and Nano Electronics and Photonics XIV 10111, 536-542, 2017 | | 2017 |
Subhananda (Subho) ChakrabartiProfessor, Indian Institute of Technology Bombay在 ee.iitb.ac.in 的电子邮件经过验证
