| Carrier dynamics and electro-optical characterization of high-performance GaN/InGaN core-shell nanowire light-emitting diodes M Nami, IE Stricklin, KM DaVico, S Mishkat-Ul-Masabih, ... Scientific reports 8 (1), 501, 2018 | 86 | 2018 |
| High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ... IEEE Photonics Technology Letters 29 (4), 381-384, 2017 | 80 | 2017 |
| Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors S Mishkat-Ul-Masabih, A Aragon, M Monavarian, T Luk, D Feezell Applied Physics Express 12 (3), 036504, 2019 | 64 | 2019 |
| Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ... Journal of Applied Physics 122 (3), 2017 | 61 | 2017 |
| Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ... Acs Photonics 6 (7), 1618-1625, 2019 | 56 | 2019 |
| Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN S Mishkat-Ul-Masabih, TS Luk, A Rishinaramangalam, M Monavarian, ... Applied Physics Letters 112 (4), 2018 | 42 | 2018 |
| Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs S Mishkat‐Ul‐Masabih, J Leonard, D Cohen, S Nakamura, D Feezell physica status solidi (a) 214 (8), 1600819, 2017 | 32 | 2017 |
| Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser SG Lee, S Mishkat-Ul-Masabih, JT Leonard, DF Feezell, DA Cohen, ... Applied Physics Express 10 (1), 011001, 2016 | 31 | 2016 |
| Controlled growth of ordered III-nitride core–shell nanostructure arrays for visible optoelectronic devices AK Rishinaramangalam, SM Ul Masabih, MN Fairchild, JB Wright, ... Journal of Electronic Materials 44, 1255-1262, 2015 | 31 | 2015 |
| High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth A Rashidi, AK Rishinaramangalam, AA Aragon, S Mishkat-Ul-Masabih, ... IEEE Photonics Technology Letters 32 (7), 383-386, 2020 | 15 | 2020 |
| Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors S Mishkat-Ul-Masabih, T Luk, M Monavarian, D Feezell Optics Express 27 (7), 9495-9501, 2019 | 13 | 2019 |
| Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar core-shell triangular nanostripe GaN/InGaN LEDs S Okur, AK Rishinaramangalam, S Mishkat-Ul-Masabih, M Nami, S Liu, ... Nanotechnology 29 (23), 235206, 2018 | 5 | 2018 |
| Nonpolar GaN-based superluminescent diode with 2.5 GHz modulation bandwidth AK Rishinaramangalam, A Rashidi, SMU Masabih, AA Aragon, ... 2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018 | 4 | 2018 |
| Selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes AK Rishinaramangalam, MN Fairchild, SMU Masabih, DM Shima, ... 2014 Conference on Lasers and Electro-Optics (CLEO)-Laser Science to …, 2014 | 4 | 2014 |
| Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors SM Mishkat-Ul-Masabih, AA Aragon, M Monavarian, TS Luk, DF Feezell Gallium Nitride Materials and Devices XV 11280, 54-68, 2020 | 2 | 2020 |
| Optically Pumped Polarization-Pinned GaN-Based Vertical-Cavity Surface-Emitting Lasers using Nanoporous Distributed Bragg Reflectors SM Mishkat-Ul-Masabih, TS Luk, M Monavarian, DF Feezell 2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018 | 2 | 2018 |
| Devices comprising distributed bragg reflectors and methods of making the devices T Busani, D Feezell, M Behzadirad, M Monavarian, S Mishkat-ul-masabih US Patent App. 17/780,689, 2023 | 1 | 2023 |
| Nonpolar GaN-Based VCSELs with Lattice-Matched Nanoporous Distributed Bragg Reflector Mirrors SM Mishkat-Ul-Masabih The University of New Mexico, 2019 | 1 | 2019 |
| Adaptive relay selection scheme using hybrid forwarding protocol SM Mishkat-Ul-Masabih, MS Alam, MR Hasan ICTC 2011, 46-51, 2011 | 1 | 2011 |
| Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching M Monavarian, D Feezell, A Aragon, S Mishkat-ul-masabih, A Allerman, ... US Patent 11,715,635, 2023 | | 2023 |
Daniel FeezellUniversity of New Mexico在 unm.edu 的电子邮件经过验证
