One-dimensional steeplechase for electrons realized MT Björk, BJ Ohlsson, T Sass, AI Persson, C Thelander, MH Magnusson, ... Nano Letters 2 (2), 87-89, 2002 | 976 | 2002 |
Solid-phase diffusion mechanism for GaAs nanowire growth AI Persson, MW Larsson, S Stenström, BJ Ohlsson, L Samuelson, ... Nature materials 3 (10), 677-681, 2004 | 896 | 2004 |
Nanowire-based one-dimensional electronics C Thelander, P Agarwal, S Brongersma, J Eymery, LF Feiner, A Forchel, ... Materials today 9 (10), 28-35, 2006 | 889 | 2006 |
One-dimensional heterostructures in semiconductor nanowhiskers MT Björk, BJ Ohlsson, T Sass, AI Persson, C Thelander, MH Magnusson, ... Applied Physics Letters 80 (6), 1058-1060, 2002 | 832 | 2002 |
Nanowire resonant tunneling diodes MT Björk, BJ Ohlsson, C Thelander, AI Persson, K Deppert, ... Applied Physics Letters 81 (23), 4458-4460, 2002 | 606 | 2002 |
Single-electron transistors in heterostructure nanowires C Thelander, T Mårtensson, MT Björk, BJ Ohlsson, MW Larsson, ... Applied Physics Letters 83 (10), 2052-2054, 2003 | 565 | 2003 |
Role of surface diffusion in chemical beam epitaxy of InAs nanowires LE Jensen, MT Björk, S Jeppesen, AI Persson, BJ Ohlsson, L Samuelson Nano Letters 4 (10), 1961-1964, 2004 | 439 | 2004 |
Size-, shape-, and position-controlled GaAs nano-whiskers BJ Ohlsson, MT Björk, MH Magnusson, K Deppert, L Samuelson, ... Applied Physics Letters 79 (20), 3335-3337, 2001 | 392 | 2001 |
Nanostructures and methods for manufacturing the same LI Samuelson, BJ Ohlsson US Patent 8,772,626, 2014 | 339* | 2014 |
Monolithic GaAs/InGaP nanowire light emitting diodes on silicon CPT Svensson, T Mårtensson, J Trägårdh, C Larsson, M Rask, ... Nanotechnology 19 (30), 305201, 2008 | 338 | 2008 |
Fabrication of individually seeded nanowire arrays by vapour–liquid–solid growth T Mårtensson, M Borgström, W Seifert, BJ Ohlsson, L Samuelson Nanotechnology 14 (12), 1255, 2003 | 296 | 2003 |
Defect-free InP nanowires grown in [001] direction on InP (001) U Krishnamachari, M Borgstrom, BJ Ohlsson, N Panev, L Samuelson, ... Applied Physics Letters 85 (11), 2077-2079, 2004 | 216 | 2004 |
Growth and characterization of GaAs and InAs nano-whiskers and InAs/GaAs heterostructures BJ Ohlsson, MT Björk, AI Persson, C Thelander, LR Wallenberg, ... Physica E: Low-dimensional Systems and Nanostructures 13 (2-4), 1126-1130, 2002 | 208 | 2002 |
Nanoelectronic structure and method of producing such LI Samuelson, P Svensson, J Ohlsson, T Lowgren US Patent 8,049,203, 2011 | 124 | 2011 |
Assembly of nanoscaled field effect transistors LE Wernersson, E Lind, T Bryllert, J Ohlsson, T Löwgren, L Samuelson, ... US Patent 8,063,450, 2011 | 123 | 2011 |
Epitaxial growth of indium arsenide nanowires on silicon using nucleation templates formed by self‐assembled organic coatings T Mårtensson, JB Wagner, E Hilner, A Mikkelsen, C Thelander, J Stangl, ... Advanced materials 19 (14), 1801-1806, 2007 | 123 | 2007 |
Development of a vertical wrap-gated InAs FET C Thelander, C Rehnstedt, LE Froberg, E Lind, T Martensson, P Caroff, ... IEEE Transactions on Electron Devices 55 (11), 3030-3036, 2008 | 118 | 2008 |
LED with upstanding nanowire structure and method of producing such LI Samuelson, B Pedersen, BJ Ohlsson US Patent 8,183,587, 2012 | 107 | 2012 |
Semiconductor nanowires for novel one-dimensional devices L Samuelson, MT Björk, K Deppert, M Larsson, BJ Ohlsson, N Panev, ... Physica E: Low-dimensional Systems and Nanostructures 21 (2-4), 560-567, 2004 | 105 | 2004 |
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them LI Samuelson, BJ Ohlsson, TMI Martensson US Patent 7,608,147, 2009 | 104 | 2009 |