| Evidence for topological type-II Weyl semimetal WTe2 P Li, Y Wen, X He, Q Zhang, C Xia, ZM Yu, SA Yang, Z Zhu, HN Alshareef, ... Nature communications 8 (1), 2150, 2017 | 393 | 2017 |
| Strain engineering in monolayer WS2, MoS2, and the WS2/MoS2 heterostructure X He, H Li, Z Zhu, Z Dai, Y Yang, P Yang, Q Zhang, P Li, ... Applied Physics Letters 109 (17), 173105, 2016 | 194 | 2016 |
| Gate‐tunable and multidirection‐switchable memristive phenomena in a van der Waals ferroelectric F Xue, X He, JRD Retamal, A Han, J Zhang, Z Liu, JK Huang, W Hu, ... Advanced Materials 31 (29), 1901300, 2019 | 168 | 2019 |
| Giant ferroelectric resistance switching controlled by a modulatory terminal for low‐power neuromorphic in‐memory computing F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ... Advanced Materials 33 (21), 2008709, 2021 | 104 | 2021 |
| Optoelectronic ferroelectric domain‐wall memories made from a single Van Der Waals ferroelectric F Xue, X He, W Liu, D Periyanagounder, C Zhang, M Chen, CH Lin, L Luo, ... Advanced Functional Materials 30 (52), 2004206, 2020 | 93 | 2020 |
| Enhancement of Dielectric Permittivity of Ti3C2Tx MXene/Polymer Composites by Controlling Flake Size and Surface Termination S Tu, Q Jiang, J Zhang, X He, MN Hedhili, X Zhang, HN Alshareef ACS applied materials & interfaces 11 (30), 27358-27362, 2019 | 89 | 2019 |
| Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS2 Z Wang, X He, XX Zhang, HN Alshareef Advanced materials 28 (41), 9133-9141, 2016 | 73 | 2016 |
| Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid J Duan, N Tang, X He, Y Yan, S Zhang, X Qin, X Wang, X Yang, F Xu, ... Scientific reports 4 (1), 4889, 2014 | 66 | 2014 |
| Integrated Memory Devices Based on 2D Materials F Xue, C Zhang, Y Ma, Y Wen, X He, B Yu, X Zhang Advanced Materials, 2201880, 2022 | 61 | 2022 |
| Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe Y Li, Y Li, P Li, B Fang, X Yang, Y Wen, D Zheng, C Zhang, X He, ... Nature communications 12 (1), 540, 2021 | 60 | 2021 |
| Large‐Area Chemical Vapor Deposited MoS2 with Transparent Conducting Oxide Contacts toward Fully Transparent 2D Electronics Z Dai, Z Wang, X He, XX Zhang, HN Alshareef Advanced Functional Materials 27 (41), 1703119, 2017 | 57 | 2017 |
| High‐Performance Monolayer MoS2 Films at the Wafer Scale by Two‐Step Growth X Xu, G Das, X He, MN Hedhili, ED Fabrizio, X Zhang, HN Alshareef Advanced Functional Materials 29 (32), 1901070, 2019 | 56 | 2019 |
| Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions F Xue, X He, Y Ma, D Zheng, C Zhang, LJ Li, JH He, B Yu, X Zhang Nature Communications 12 (1), 7291, 2021 | 50 | 2021 |
| Bio‐Inspired Carbon Monoxide Sensors with Voltage‐Activated Sensitivity S Savagatrup, V Schroeder, X He, S Lin, M He, O Yassine, KN Salama, ... Angewandte Chemie 129 (45), 14254-14258, 2017 | 46 | 2017 |
| Iontronics Using V2CTx MXene-Derived Metal–Organic Framework Solid Electrolytes X Xu, H Wu, X He, MK Hota, Z Liu, S Zhuo, H Kim, X Zhang, HN Alshareef ACS nano 14 (8), 9840-9847, 2020 | 40 | 2020 |
| Generation of Rashba spin–orbit coupling in CdSe nanowire by ionic liquid gate S Zhang, N Tang, W Jin, J Duan, X He, X Rong, C He, L Zhang, X Qin, ... Nano letters 15 (2), 1152-1157, 2015 | 40 | 2015 |
| Tuning the graphene work function by uniaxial strain X He, N Tang, X Sun, L Gan, F Ke, T Wang, F Xu, X Wang, X Yang, W Ge, ... Applied Physics Letters 106 (4), 043106, 2015 | 38 | 2015 |
| Shear strain induced modulation to the transport properties of graphene X He, L Gao, N Tang, J Duan, F Xu, X Wang, X Yang, W Ge, B Shen Applied Physics Letters 105 (8), 083108, 2014 | 38 | 2014 |
| Magnetic skyrmions with unconventional helicity polarization in a van der Waals ferromagnet C Zhang, C Liu, S Zhang, B Zhou, C Guan, Y Ma, H Algaidi, D Zheng, Y Li, ... Advanced Materials 34 (42), 2204163, 2022 | 29 | 2022 |
| Mobility-Fluctuation-Controlled Linear Positive Magnetoresistance in 2D Semiconductor Bi2O2Se Nanoplates P Li, A Han, C Zhang, X He, J Zhang, D Zheng, L Cheng, LJ Li, GX Miao, ... ACS nano 14 (9), 11319-11326, 2020 | 28 | 2020 |
