| Work function optimization for enhancement of sensitivity of dual-material (DM), double-gate (DG), junctionless MOSFET-based biosensor M Kumari, NK Singh, M Sahoo, H Rahaman Applied Physics A 127, 1-8, 2021 | 15 | 2021 |
| 2-D analytical modeling and simulation of dual material, double gate, gate stack engineered, junctionless MOSFET based biosensor with enhanced sensitivity M Kumari, NK Singh, M Sahoo, H Rahaman Silicon, 1-12, 2022 | 14 | 2022 |
| A detailed investigation of dielectric-modulated dual-gate TMD FET based label-free biosensor via analytical modelling M Kumari, NK Singh, M Sahoo Scientific Reports 12 (1), 21115, 2022 | 13 | 2022 |
| A compact short-channel analytical drain current model of asymmetric dual-gate TMD FET in subthreshold region including fringing field effects NK Singh, M Kumari, M Sahoo IEEE Access 8, 207982-207990, 2020 | 9 | 2020 |
| Investigation on the effect of gate dielectric and other device parameters on digital performance of silicene nanoribbon tunnel FET NK Singh, M Sahoo IEEE Transactions on Electron Devices 67 (7), 2966-2973, 2020 | 9 | 2020 |
| Analytical modeling of short-channel TMD TFET considering effect of fringing field and 2-D junctions depletion regions NK Singh, M Sahoo IEEE Transactions on Electron Devices 69 (2), 843-850, 2021 | 6 | 2021 |
| Effect of carrier number in density of states and quantum capacitance of with and without disorder GNR-FET on drain current NK Singh, S Maity, CT Bhunia Superlattices and Microstructures 100, 458-467, 2016 | 3 | 2016 |
| Piecemeal Politics: Infrastructure Development in India J Wallack, NK Singh mimeo, 2007 | 3 | 2007 |
| Comparative investigation of different doping techniques in TMD Tunnel FET for Subdeca nanometer technology nodes NK Singh, M Sahoo Journal of Electronic Materials 52 (8), 5327-5336, 2023 | 1 | 2023 |
| Investigation of silicene nanoribbon tunnel FET for low power digital VLSI circuit application with variation of device parameters NK Singh, M Sahoo 2018 10th International Conference on Communications, Circuits and Systems …, 2018 | 1 | 2018 |
| Design of low-power and high-performance 10 nm SRAM using Electrostatically doped TMD TFET NK Singh, R Shankar, S Verma, M Sahoo 2023 International Symposium on Devices, Circuits and Systems (ISDCS) 1, 01-06, 2023 | | 2023 |
| All region analytical modeling of 2-D transition metal dichalcogenide FET by considering effect of fringing field and region-wise mobility NK Singh, M Kumari, M Sahoo Physica E: Low-dimensional Systems and Nanostructures 145, 115480, 2023 | | 2023 |
| Current relation of single energy level Graphene through considering defects and energy broadening NK Singh, S Maity Materials Today: Proceedings 4 (9), 10390-10394, 2017 | | 2017 |
| All Region Analytical Modeling of 2-D Transition Metal Dichalcogenide Fet by Considering Effect of Fringing Field Andregion-Wise Mobility M Sahoo, NK Singh, M Kumari Available at SSRN 4133354, 0 | | |
