Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ... Physical Review B—Condensed Matter and Materials Physics 79 (20), 205316, 2009 | 249 | 2009 |
Synthesis and electrical conductivity of multilayer silicene P Vogt, P Capiod, M Berthe, A Resta, P De Padova, T Bruhn, G Le Lay, ... Applied physics letters 104 (2), 2014 | 179 | 2014 |
Amine-terminated silicon nanoparticles: synthesis, optical properties and their use in bioimaging M Rosso-Vasic, E Spruijt, Z Popović, K Overgaag, B Van Lagen, ... Journal of Materials Chemistry 19 (33), 5926-5933, 2009 | 173 | 2009 |
High charge mobility in two-dimensional percolative networks of PbSe quantum dots connected by atomic bonds WH Evers, JM Schins, M Aerts, A Kulkarni, P Capiod, M Berthe, ... Nature communications 6 (1), 8195, 2015 | 159 | 2015 |
Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires VG Dubrovskii, T Xu, AD Álvarez, SR Plissard, P Caroff, F Glas, ... Nano letters 15 (8), 5580-5584, 2015 | 144 | 2015 |
Density of States Measured by Scanning-Tunneling Spectroscopy Sheds New Light<? format?> on the Optical Transitions in PbSe Nanocrystals P Liljeroth, PAZ van Emmichoven, SG Hickey, H Weller, B Grandidier, ... Physical review letters 95 (8), 086801, 2005 | 140 | 2005 |
Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes B Grandidier, YM Niquet, B Legrand, JP Nys, C Priester, D Stiévenard, ... Physical Review Letters 85 (5), 1068, 2000 | 140 | 2000 |
Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques T Xu, KA Dick, S Plissard, TH Nguyen, Y Makoudi, M Berthe, JP Nys, ... Nanotechnology 23 (9), 095702, 2012 | 134 | 2012 |
Variable orbital coupling in a two-dimensional quantum-dot solid probed on a local scale P Liljeroth, K Overgaag, A Urbieta, B Grandidier, SG Hickey, ... Physical review letters 97 (9), 096803, 2006 | 119 | 2006 |
Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots B Legrand, B Grandidier, JP Nys, D Stievenard, JM Gérard, ... Applied physics letters 73 (1), 96-98, 1998 | 118 | 1998 |
Atomic-scale study of GaMnAs/GaAs layers B Grandidier, JP Nys, C Delerue, D Stievenard, Y Higo, M Tanaka Applied Physics Letters 77 (24), 4001-4003, 2000 | 117 | 2000 |
Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs G Mahieu, B Grandidier, D Deresmes, JP Nys, D Stiévenard, P Ebert Physical review letters 94 (2), 026407, 2005 | 94 | 2005 |
Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs B Grandidier, H Chen, RM Feenstra, DT McInturff, PW Juodawlkis, ... Applied physics letters 74 (10), 1439-1441, 1999 | 81 | 1999 |
Can scanning tunnelling spectroscopy measure the density of states of semiconductor quantum dots? P Liljeroth, L Jdira, K Overgaag, B Grandidier, S Speller, ... Physical Chemistry Chemical Physics 8 (33), 3845-3850, 2006 | 66 | 2006 |
Size‐dependent structures and optical absorption of boron‐hyperdoped silicon nanocrystals Z Ni, X Pi, S Zhou, T Nozaki, B Grandidier, D Yang Advanced Optical Materials 4 (5), 700-707, 2016 | 65 | 2016 |
Boron distribution in the core of Si nanowire grown by chemical vapor deposition W Chen, VG Dubrovskii, X Liu, T Xu, R Lardé, J Philippe Nys, ... Journal of Applied Physics 111 (9), 2012 | 65 | 2012 |
Probing the carrier capture rate of a single quantum level M Berthe, R Stiufiuc, B Grandidier, D Deresmes, C Delerue, D Stiévenard Science 319 (5862), 436-438, 2008 | 64 | 2008 |
Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties T Xu, JP Nys, A Addad, OI Lebedev, A Urbieta, B Salhi, M Berthe, ... Physical Review B—Condensed Matter and Materials Physics 81 (11), 115403, 2010 | 63 | 2010 |
Narrowing the length distribution of Ge nanowires VG Dubrovskii, T Xu, Y Lambert, JP Nys, B Grandidier, D Stievenard, ... Physical review letters 108 (10), 105501, 2012 | 62 | 2012 |
Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires L Lymperakis, PH Weidlich, H Eisele, M Schnedler, JP Nys, B Grandidier, ... Applied Physics Letters 103 (15), 2013 | 59 | 2013 |