关注
Bruno Grandidier
Bruno Grandidier
IEMN-CNRS, dept. ISEN Physics
在 isen.fr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov, WH Chen, R Larde, ...
Physical Review B—Condensed Matter and Materials Physics 79 (20), 205316, 2009
2492009
Synthesis and electrical conductivity of multilayer silicene
P Vogt, P Capiod, M Berthe, A Resta, P De Padova, T Bruhn, G Le Lay, ...
Applied physics letters 104 (2), 2014
1792014
Amine-terminated silicon nanoparticles: synthesis, optical properties and their use in bioimaging
M Rosso-Vasic, E Spruijt, Z Popović, K Overgaag, B Van Lagen, ...
Journal of Materials Chemistry 19 (33), 5926-5933, 2009
1732009
High charge mobility in two-dimensional percolative networks of PbSe quantum dots connected by atomic bonds
WH Evers, JM Schins, M Aerts, A Kulkarni, P Capiod, M Berthe, ...
Nature communications 6 (1), 8195, 2015
1592015
Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires
VG Dubrovskii, T Xu, AD Álvarez, SR Plissard, P Caroff, F Glas, ...
Nano letters 15 (8), 5580-5584, 2015
1442015
Density of States Measured by Scanning-Tunneling Spectroscopy Sheds New Light<? format?> on the Optical Transitions in PbSe Nanocrystals
P Liljeroth, PAZ van Emmichoven, SG Hickey, H Weller, B Grandidier, ...
Physical review letters 95 (8), 086801, 2005
1402005
Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes
B Grandidier, YM Niquet, B Legrand, JP Nys, C Priester, D Stiévenard, ...
Physical Review Letters 85 (5), 1068, 2000
1402000
Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques
T Xu, KA Dick, S Plissard, TH Nguyen, Y Makoudi, M Berthe, JP Nys, ...
Nanotechnology 23 (9), 095702, 2012
1342012
Variable orbital coupling in a two-dimensional quantum-dot solid probed on a local scale
P Liljeroth, K Overgaag, A Urbieta, B Grandidier, SG Hickey, ...
Physical review letters 97 (9), 096803, 2006
1192006
Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots
B Legrand, B Grandidier, JP Nys, D Stievenard, JM Gérard, ...
Applied physics letters 73 (1), 96-98, 1998
1181998
Atomic-scale study of GaMnAs/GaAs layers
B Grandidier, JP Nys, C Delerue, D Stievenard, Y Higo, M Tanaka
Applied Physics Letters 77 (24), 4001-4003, 2000
1172000
Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs
G Mahieu, B Grandidier, D Deresmes, JP Nys, D Stiévenard, P Ebert
Physical review letters 94 (2), 026407, 2005
942005
Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs
B Grandidier, H Chen, RM Feenstra, DT McInturff, PW Juodawlkis, ...
Applied physics letters 74 (10), 1439-1441, 1999
811999
Can scanning tunnelling spectroscopy measure the density of states of semiconductor quantum dots?
P Liljeroth, L Jdira, K Overgaag, B Grandidier, S Speller, ...
Physical Chemistry Chemical Physics 8 (33), 3845-3850, 2006
662006
Size‐dependent structures and optical absorption of boron‐hyperdoped silicon nanocrystals
Z Ni, X Pi, S Zhou, T Nozaki, B Grandidier, D Yang
Advanced Optical Materials 4 (5), 700-707, 2016
652016
Boron distribution in the core of Si nanowire grown by chemical vapor deposition
W Chen, VG Dubrovskii, X Liu, T Xu, R Lardé, J Philippe Nys, ...
Journal of Applied Physics 111 (9), 2012
652012
Probing the carrier capture rate of a single quantum level
M Berthe, R Stiufiuc, B Grandidier, D Deresmes, C Delerue, D Stiévenard
Science 319 (5862), 436-438, 2008
642008
Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties
T Xu, JP Nys, A Addad, OI Lebedev, A Urbieta, B Salhi, M Berthe, ...
Physical Review B—Condensed Matter and Materials Physics 81 (11), 115403, 2010
632010
Narrowing the length distribution of Ge nanowires
VG Dubrovskii, T Xu, Y Lambert, JP Nys, B Grandidier, D Stievenard, ...
Physical review letters 108 (10), 105501, 2012
622012
Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires
L Lymperakis, PH Weidlich, H Eisele, M Schnedler, JP Nys, B Grandidier, ...
Applied Physics Letters 103 (15), 2013
592013
系统目前无法执行此操作,请稍后再试。
文章 1–20