| GaN HEMT reliability JA del Alamo, J Joh Microelectronics reliability 49 (9-11), 1200-1206, 2009 | 568 | 2009 |
| A current-transient methodology for trap analysis for GaN high electron mobility transistors J Joh, JA Del Alamo IEEE Transactions on Electron Devices 58 (1), 132-140, 2010 | 478 | 2010 |
| Critical voltage for electrical degradation of GaN high-electron mobility transistors J Joh, JA Del Alamo IEEE Electron Device Letters 29 (4), 287-289, 2008 | 402 | 2008 |
| Mechanisms for electrical degradation of GaN high-electron mobility transistors J Joh, JA del Alamo 2006 International Electron Devices Meeting, 1-4, 2006 | 272 | 2006 |
| Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors P Makaram, J Joh, JA del Alamo, T Palacios, CV Thompson Applied Physics Letters 96 (23), 2010 | 216 | 2010 |
| TEM observation of crack-and pit-shaped defects in electrically degraded GaN HEMTs U Chowdhury, JL Jimenez, C Lee, E Beam, P Saunier, T Balistreri, ... IEEE Electron Device Letters 29 (10), 1098-1100, 2008 | 204 | 2008 |
| Measurement of channel temperature in GaN high-electron mobility transistors J Joh, JA Del Alamo, U Chowdhury, TM Chou, HQ Tserng, JL Jimenez IEEE Transactions on Electron Devices 56 (12), 2895-2901, 2009 | 190 | 2009 |
| A model for the critical voltage for electrical degradation of GaN high electron mobility transistors J Joh, F Gao, T Palacios, JA Del Alamo Microelectronics reliability 50 (6), 767-773, 2010 | 142 | 2010 |
| Gate current degradation mechanisms of GaN high electron mobility transistors J Joh, L Xia, JA del Alamo 2007 IEEE International Electron Devices Meeting, 385-388, 2007 | 128 | 2007 |
| A simple current collapse measurement technique for GaN high-electron mobility transistors J Joh, JA Del Alamo, J Jimenez IEEE Electron Device Letters 29 (7), 665-667, 2008 | 92 | 2008 |
| Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors J Joh, JA del Alamo 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 80 | 2008 |
| Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications J Joh, N Tipirneni, S Pendharkar, S Krishnan 2014 IEEE International Reliability Physics Symposium, 6C. 5.1-6C. 5.4, 2014 | 68 | 2014 |
| Role of stress voltage on structural degradation of GaN high-electron-mobility transistors J Joh, JA Del Alamo, K Langworthy, S Xie, T Zheleva Microelectronics Reliability 51 (2), 201-206, 2011 | 67 | 2011 |
| Application reliability validation of GaN power devices SR Bahl, J Joh, L Fu, A Sasikumar, T Chatterjee, S Pendharkar 2016 IEEE International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2016 | 56 | 2016 |
| High voltage degradation of GaN high electron mobility transistors on silicon substrate S Demirtas, J Joh, JA Del Alamo Microelectronics Reliability 50 (6), 758-762, 2010 | 49 | 2010 |
| GaN HEMT reliability JA Alamo, J Joh Microelectron. Reliab 49 (9-11), 1200-1206, 2009 | 49 | 2009 |
| Progress in GaN performances and reliability P Saunier, C Lee, A Balistreri, D Dumka, J Jimenez, HQ Tserng, MY Kao, ... 2007 65th Annual Device Research Conference, 35-36, 2007 | 49 | 2007 |
| RF power degradation of GaN high electron mobility transistors J Joh, JA del Alamo 2010 International Electron Devices Meeting, 20.2. 1-20.2. 4, 2010 | 46 | 2010 |
| Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors CH Lin, TA Merz, DR Doutt, MJ Hetzer, J Joh, JA del Alamo, UK Mishra, ... Applied Physics Letters 95 (3), 2009 | 45 | 2009 |
| Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors L Li, J Joh, JA Del Alamo, CV Thompson Applied Physics Letters 100 (17), 2012 | 36 | 2012 |
Jesus A. del AlamoMIT在 mit.edu 的电子邮件经过验证
Jesus A. del AlamoMIT在 mit.edu 的电子邮件经过验证
Sameer PendharkarTexas Instruments Inc.在 ti.com 的电子邮件经过验证
Tomás PalaciosMIT在 mit.edu 的电子邮件经过验证