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Mario Bendra
Mario Bendra
其他姓名M. Bendra, Bendra M., Bendra Mario
Institute for Microelectronics, TU Wien
在 iue.tuwien.ac.at 的电子邮件经过验证 - 首页
标题
引用次数
引用次数
年份
Spin and charge drift-diffusion in ultra-scaled MRAM cells
S Fiorentini, M Bendra, J Ender, RL de Orio, W Goes, S Selberherr, ...
Scientific Reports 12 (1), 20958, 2022
252022
Finite element approach for the simulation of modern MRAM devices
S Fiorentini, NP Jørstad, J Ender, RL de Orio, S Selberherr, M Bendra, ...
Micromachines 14 (5), 898, 2023
102023
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach
T Hadámek, S Fiorentini, M Bendra, J Ender, RL de Orio, W Gös, ...
Solid-State Electronics 193, 108269, 2022
102022
Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling
M Bendra, RL Orio, S Selberherr, W Goes, V Sverdlov
Micromachines 15 (5), 568, 2024
42024
Interface effects in ultra-scaled MRAM cells
M Bendra, S Fiorentini, W Goes, S Selberherr, V Sverdlov
Solid-State Electronics 194, 108373, 2022
42022
Advances in modeling emerging magnetoresistive random access memories: from finite element methods to machine learning approaches
J Ender, S Fiorentini, RL de Orio, T Hadámek, M Bendra, W Goes, ...
International Conference on Micro-and Nano-Electronics 2021 12157, 58-71, 2022
32022
Spin torques in ultra-scaled MRAM devices
S Fiorentini, M Bendra, J Ender, RL De Orio, W Goes, S Selberherr, ...
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
22022
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping
M Bendra, S Fiorentini, S Selberherr, W Goes, V Sverdlov
Solid-State Electronics 208, 108738, 2023
12023
Modeling of Ultra-Scaled Magnetoresistive Random Access Memory
M Bendra, RL de Orio, W Goes, V Sverdlov, S Selberherr
Microelectronic Devices and Technologies, 28, 2023
12023
The influence of interface effects on the switching behavior in ultra-scaled MRAM cells
M Bendra, S Fiorentini, W Goes, S Selberherr, V Sverdlov
Solid-State Electronics 201, 108590, 2023
12023
Finite Element Method Approach to MRAM Modeling
M Bendra, J Ender, S Fiorentini, T Hadámek, RL de Orio, W Goes, ...
2021 44th International Convention on Information, Communication and …, 2021
12021
Temperature Increase in MRAM at Writing: A Finite Element Approach
T Hadámek, M Bendra, S Fiorentini, J Ender, RL de Orio, W Goes, ...
2021 Joint International EUROSOI Workshop and International Conference on …, 2021
12021
Simulation of SAF-Enhanced Multilayered STT-MRAM Structures
M Bendra, W Goes, S Selberherr, V Sverdlov
2024 Austrochip Workshop on Microelectronics (Austrochip), 1-4, 2024
2024
Simulation of Advanced MRAM Devices for sub-ns Switching
B Pruckner, NP Jorstad, M Bendra, T Hadamek, W Goes, S Selberherr, ...
2024 International Conference on Simulation of Semiconductor Processes and …, 2024
2024
Investigating Reliability Issues in Multi-Layered STT-MRAM with Synthetic Antiferromagnets
M Bendra, RL de Orio, W Goes, S Selberherr, V Sverdlov
2024 IEEE International Symposium on the Physical and Failure Analysis of …, 2024
2024
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling
M Bendra, B Pruckner, RL de Orio, S Selberherr, W Goes, V Sverdlov
2024 Device Research Conference (DRC), 1-2, 2024
2024
Modeling Spin and Charge Transport in Magnetic Multilayers: From Emerging Memories to Terahertz Emitters
V Sverdlov, NP Jorstad, M Bendra, B Pruckner, T Hadamek, W Goes, ...
# PLACEHOLDER_PARENT_METADATA_VALUE#, 13-14, 2024
2024
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures
M Bendra, RL de Orio, S Selberherr, W Goes, V Sverdlov
2024 47th MIPRO ICT and Electronics Convention (MIPRO), 1579-1583, 2024
2024
Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics
M Bendra, NP Jorstad, R Lacerda de Orio, S Selberherr, W Goes, ...
# PLACEHOLDER_PARENT_METADATA_VALUE#, 2023
2023
Multi-bit Operation in an MRAM Cell with a Composite Free Layer
V Sverdlov, M Bendra, NP Jorstad, B Pruckner, T Hadamek, W Goes, ...
# PLACEHOLDER_PARENT_METADATA_VALUE#, 143-144, 2023
2023
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