Spin and charge drift-diffusion in ultra-scaled MRAM cells S Fiorentini, M Bendra, J Ender, RL de Orio, W Goes, S Selberherr, ... Scientific Reports 12 (1), 20958, 2022 | 25 | 2022 |
Finite element approach for the simulation of modern MRAM devices S Fiorentini, NP Jørstad, J Ender, RL de Orio, S Selberherr, M Bendra, ... Micromachines 14 (5), 898, 2023 | 10 | 2023 |
Temperature increase in STT-MRAM at writing: A fully three-dimensional finite element approach T Hadámek, S Fiorentini, M Bendra, J Ender, RL de Orio, W Gös, ... Solid-State Electronics 193, 108269, 2022 | 10 | 2022 |
Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling M Bendra, RL Orio, S Selberherr, W Goes, V Sverdlov Micromachines 15 (5), 568, 2024 | 4 | 2024 |
Interface effects in ultra-scaled MRAM cells M Bendra, S Fiorentini, W Goes, S Selberherr, V Sverdlov Solid-State Electronics 194, 108373, 2022 | 4 | 2022 |
Advances in modeling emerging magnetoresistive random access memories: from finite element methods to machine learning approaches J Ender, S Fiorentini, RL de Orio, T Hadámek, M Bendra, W Goes, ... International Conference on Micro-and Nano-Electronics 2021 12157, 58-71, 2022 | 3 | 2022 |
Spin torques in ultra-scaled MRAM devices S Fiorentini, M Bendra, J Ender, RL De Orio, W Goes, S Selberherr, ... ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 2 | 2022 |
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping M Bendra, S Fiorentini, S Selberherr, W Goes, V Sverdlov Solid-State Electronics 208, 108738, 2023 | 1 | 2023 |
Modeling of Ultra-Scaled Magnetoresistive Random Access Memory M Bendra, RL de Orio, W Goes, V Sverdlov, S Selberherr Microelectronic Devices and Technologies, 28, 2023 | 1 | 2023 |
The influence of interface effects on the switching behavior in ultra-scaled MRAM cells M Bendra, S Fiorentini, W Goes, S Selberherr, V Sverdlov Solid-State Electronics 201, 108590, 2023 | 1 | 2023 |
Finite Element Method Approach to MRAM Modeling M Bendra, J Ender, S Fiorentini, T Hadámek, RL de Orio, W Goes, ... 2021 44th International Convention on Information, Communication and …, 2021 | 1 | 2021 |
Temperature Increase in MRAM at Writing: A Finite Element Approach T Hadámek, M Bendra, S Fiorentini, J Ender, RL de Orio, W Goes, ... 2021 Joint International EUROSOI Workshop and International Conference on …, 2021 | 1 | 2021 |
Simulation of SAF-Enhanced Multilayered STT-MRAM Structures M Bendra, W Goes, S Selberherr, V Sverdlov 2024 Austrochip Workshop on Microelectronics (Austrochip), 1-4, 2024 | | 2024 |
Simulation of Advanced MRAM Devices for sub-ns Switching B Pruckner, NP Jorstad, M Bendra, T Hadamek, W Goes, S Selberherr, ... 2024 International Conference on Simulation of Semiconductor Processes and …, 2024 | | 2024 |
Investigating Reliability Issues in Multi-Layered STT-MRAM with Synthetic Antiferromagnets M Bendra, RL de Orio, W Goes, S Selberherr, V Sverdlov 2024 IEEE International Symposium on the Physical and Failure Analysis of …, 2024 | | 2024 |
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling M Bendra, B Pruckner, RL de Orio, S Selberherr, W Goes, V Sverdlov 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
Modeling Spin and Charge Transport in Magnetic Multilayers: From Emerging Memories to Terahertz Emitters V Sverdlov, NP Jorstad, M Bendra, B Pruckner, T Hadamek, W Goes, ... # PLACEHOLDER_PARENT_METADATA_VALUE#, 13-14, 2024 | | 2024 |
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures M Bendra, RL de Orio, S Selberherr, W Goes, V Sverdlov 2024 47th MIPRO ICT and Electronics Convention (MIPRO), 1579-1583, 2024 | | 2024 |
Unified Modeling of Ultra-Scaled STT-MRAM Cells: Harnessing Parasitic Effects for Enhanced Data Storage Dynamics M Bendra, NP Jorstad, R Lacerda de Orio, S Selberherr, W Goes, ... # PLACEHOLDER_PARENT_METADATA_VALUE#, 2023 | | 2023 |
Multi-bit Operation in an MRAM Cell with a Composite Free Layer V Sverdlov, M Bendra, NP Jorstad, B Pruckner, T Hadamek, W Goes, ... # PLACEHOLDER_PARENT_METADATA_VALUE#, 143-144, 2023 | | 2023 |