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Atharv Jog
Atharv Jog
IBM Research
在 ibm.com 的电子邮件经过验证
标题
引用次数
引用次数
年份
Epitaxial metals for interconnects beyond Cu
K Barmak, S Ezzat, R Gusley, A Jog, S Kerdsongpanya, A Khaniya, ...
Journal of Vacuum Science & Technology A 38 (3), 2020
392020
Resistivity size effect in epitaxial Rh (001) and Rh (111) layers
A Jog, T Zhou, D Gall
IEEE Transactions on Electron Devices 68 (1), 257-263, 2020
302020
Depinning dynamics of crack fronts
J Chopin, A Bhaskar, A Jog, L Ponson
Physical Review Letters 121 (23), 235501, 2018
272018
Resistivity size effect in epitaxial iridium layers
A Jog, D Gall
Journal of Applied Physics 130 (11), 2021
262021
First-principles prediction of electron grain boundary scattering in fcc metals
T Zhou, A Jog, D Gall
Applied Physics Letters 120 (24), 2022
192022
Narrow interconnects: The most conductive metals
D Gall, A Jog, T Zhou
2020 IEEE International Electron Devices Meeting (IEDM), 32.3. 1-32.3. 4, 2020
162020
Effect of electronegativity on electron surface scattering in thin metal layers
A Jog, E Milosevic, P Zheng, D Gall
Applied Physics Letters 120 (4), 2022
152022
Anisotropic resistivity size effect in epitaxial Mo (001) and Mo (011) layers
A Jog, P Zheng, T Zhou, D Gall
Nanomaterials 13 (6), 957, 2023
122023
Electron scattering at surfaces and grain boundaries in Rh layers
A Jog, D Gall
IEEE Transactions on Electron Devices 69 (7), 3854-3860, 2022
92022
Ultrathin Ruthenium Films on Graphene Buffered SiO2 via Quasi Van der Waals Epitaxy
Z Lu, L Zhang, X Wen, A Jog, K Kisslinger, L Gao, J Shi, D Gall, ...
ACS Applied Electronic Materials 4 (12), 5775-5788, 2022
62022
Dominant energy carrier transitions and thermal anisotropy in epitaxial iridium thin films
C Perez, A Jog, H Kwon, D Gall, M Asheghi, S Kumar, W Park, ...
Advanced Functional Materials 32 (45), 2207781, 2022
62022
Resistivity size effect in epitaxial face-centered cubic Co (001) layers
A Thakral, A Jog, D Gall
Applied Physics Letters 124 (12), 2024
2024
Electron Scattering at Transition Metal Surfaces and Grain Boundaries
A Jog
Rensselaer Polytechnic Institute, 2022
2022
PLEASE CITE THIS ARTICLE AS DOI: 10.1063/5.0098822
T Zhou, A Jog, D Galla
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