| Susceptor for a device for epitaxially growing objects and such a device O Kordina, JO Fornell, R Berge, R Nilsson US Patent 5,695,567, 1997 | 476 | 1997 |
| Deep level defects in electron-irradiated SiC epitaxial layers C Hemmingsson, NT Son, O Kordina, JP Bergman, E Janzén, ... Journal of applied physics 81 (9), 6155-6159, 1997 | 375 | 1997 |
| Silicon vacancy related defect in 4H and 6H SiC E Sörman, NT Son, WM Chen, O Kordina, C Hallin, E Janzén Physical Review B 61 (4), 2613, 2000 | 303 | 2000 |
| Growth of SiC by “Hot‐Wall” CVD and HTCVD O Kordina, C Hallin, A Henry, JP Bergman, I Ivanov, A Ellison, NT Son, ... physica status solidi (b) 202 (1), 321-334, 1997 | 196 | 1997 |
| High temperature chemical vapor deposition of SiC O Kordina, C Hallin, A Ellison, AS Bakin, IG Ivanov, A Henry, R Yakimova, ... Applied physics letters 69 (10), 1456-1458, 1996 | 180 | 1996 |
| In situ substrate preparation for high-quality SiC chemical vapour deposition C Hallin, F Owman, P Mårtensson, A Ellison, A Konstantinov, O Kordina, ... Journal of crystal growth 181 (3), 241-253, 1997 | 161 | 1997 |
| A 4.5 kV 6H silicon carbide rectifier O Kordina, JP Bergman, A Henry, E Janzen, S Savage, J Andre, ... Applied physics letters 67 (11), 1561-1563, 1995 | 161 | 1995 |
| Electron effective masses in 4H SiC NT Son, WM Chen, O Kordina, AO Konstantinov, B Monemar, E Janzén, ... Applied physics letters 66 (9), 1074-1076, 1995 | 154 | 1995 |
| Progress in SiC: from material growth to commercial device development CH Carter Jr, VF Tsvetkov, RC Glass, D Henshall, M Brady, M St G, ... Materials Science and Engineering: B 61, 1-8, 1999 | 152 | 1999 |
| Chloride-based CVD growth of silicon carbide for electronic applications H Pedersen, S Leone, O Kordina, A Henry, S Nishizawa, Y Koshka, ... Chemical reviews 112 (4), 2434-2453, 2012 | 138 | 2012 |
| Determination of the electron effective-mass tensor in 4H SiC D Volm, BK Meyer, DM Hofmann, WM Chen, NT Son, C Persson, ... Physical Review B 53 (23), 15409, 1996 | 123 | 1996 |
| Nitrogen doping concentration as determined by photoluminescence in 4H–and 6H–SiC IG Ivanov, C Hallin, A Henry, O Kordina, E Janzén Journal of applied physics 80 (6), 3504-3508, 1996 | 119 | 1996 |
| Electron effective masses and mobilities in high‐purity 6H–SiC chemical vapor deposition layers NT Son, O Kordina, AO Konstantinov, WM Chen, E Sörman, B Monemar, ... Applied physics letters 65 (25), 3209-3211, 1994 | 116 | 1994 |
| Fast chemical sensing with metal-insulator silicon carbide structures P Tobias, A Baranzahi, AL Spetz, O Kordina, E Janzén, I Lundstrom IEEE Electron Device Letters 18 (6), 287-289, 1997 | 111 | 1997 |
| The minority carrier lifetime of n‐type 4H‐ and 6H‐SiC epitaxial layers O Kordina, JP Bergman, C Hallin, E Janzen Applied physics letters 69 (5), 679-681, 1996 | 110 | 1996 |
| Silicon carbide for power devices JW Palmour, R Singh, RC Glass, O Kordina, CH Carter Proceedings of 9th International Symposium on Power Semiconductor Devices …, 1997 | 109 | 1997 |
| A GaN–SiC hybrid material for high-frequency and power electronics JT Chen, J Bergsten, J Lu, E Janzén, M Thorsell, L Hultman, N Rorsman, ... Applied Physics Letters 113 (4), 2018 | 100 | 2018 |
| Time resolved spectroscopy of defects in SiC JP Bergman, O Kordina, E Janzén physica status solidi (a) 162 (1), 65-77, 1997 | 80 | 1997 |
| Capture cross sections of electron irradiation induced defects in 6H–SiC C Hemmingsson, NT Son, O Kordina, E Janzén, JL Lindström Journal of applied physics 84 (2), 704-708, 1998 | 79 | 1998 |
| High growth rates (> 30 μm/h) of 4H–SiC epitaxial layers using a horizontal hot-wall CVD reactor RL Myers, Y Shishkin, O Kordina, SE Saddow Journal of Crystal Growth 285 (4), 486-490, 2005 | 75 | 2005 |
