| Quantum and Coulomb effects in nano devices D Vasileska, HR Khan, SS Ahmed, G Kannan, C Ringhofer Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling, 97-181, 2011 | 53 | 2011 |
| Schred D Vasileska, SS Ahmed, M Mannino, G Klimeck, G Kannan, M Lundstrom, ... nanoHub, 2006 | 20 | 2006 |
| The impact of surface-roughness scattering on the low-field electron mobility in nano-scale Si MOSFETs G Kannan, D Vasileska Journal of Applied Physics 122 (11), 2017 | 8 | 2017 |
| Schred V2. 0: Tool to model MOS capacitors G Kannan, D Vasileska 2010 14th International Workshop on Computational Electronics, 1-4, 2010 | 7 | 2010 |
| The role of the collisional broadening of the states on the low-field mobility in silicon inversion layers GKJ Thulasingam Arizona State University, 2017 | 1 | 2017 |
| Importance of the collisional broadening of the states across MOSFET technology generations G Kannan, D Vasileska Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and …, 2012 | | 2012 |
| 2010 14th International Workshop on Computational Electronics (IWCE 2010) M Pourfath, A Yazdanpanah, M Fathipour, H Kosina | | |
Dragica VasileskaArizona State University在 asu.edu 的电子邮件经过验证
Dragica VasileskaArizona State University在 asu.edu 的电子邮件经过验证