| Deep-level impurities: A possible guide to prediction of band-edge discontinuities in semiconductor heterojunctions JM Langer, H Heinrich Physical review letters 55 (13), 1414, 1985 | 432 | 1985 |
| Transition-metal impurities in semiconductors and heterojunction band lineups JM Langer, C Delerue, M Lannoo, H Heinrich Physical Review B 38 (11), 7723, 1988 | 244 | 1988 |
| Shallow versus deep In donors in CdF2 crystals U Piekara, JM Langer, B Krukowska-Fulde Solid State Communications 23 (8), 583-587, 1977 | 143 | 1977 |
| Shallow donor states in semiconducting CdF2 JM Langer, T Langer, GL Pearson, B Krukowska‐Fulde, U Piekara physica status solidi (b) 66 (2), 537-545, 1974 | 100 | 1974 |
| Recombination processes in erbium-doped MBE silicon H Efeoglu, JH Evans, TE Jackman, B Hamilton, DC Houghton, JM Langer, ... Semiconductor science and technology 8 (2), 236, 1993 | 96 | 1993 |
| CdF2:In: A novel material for optically written storage of information AI Ryskin, AS Shcheulin, B Koziarska, JM Langer, A Suchocki, ... Applied physics letters 67 (1), 31-33, 1995 | 91 | 1995 |
| Electron trapping by metastable effective-mass states of DX donors in indirect-band-gap Al x Ga 1− x As: Te JE Dmochowski, L Dobaczewski, JM Langer, W Jantsch Physical Review B 40 (14), 9671, 1989 | 87 | 1989 |
| Auger effect in the Mn 2+ luminescence of CdF 2:(Mn, Y) crystals A Suchocki, JM Langer Physical Review B 39 (11), 7905, 1989 | 79 | 1989 |
| Deep-shallow transformation of bistable centers in semiconducting CdF2 crystals AS Shcheulin, AI Ryskin, K Swiatek, JM Langer Physics Letters A 222 (1-2), 107-112, 1996 | 65 | 1996 |
| Cd F 2: In—A Critical Positive Test of the Toyozawa Model of Impurity Self-Trapping JE Dmochowski, JM Langer, Z Kaliński, W Jantsch Physical review letters 56 (16), 1735, 1986 | 63 | 1986 |
| Large-versus small-lattice-relaxation models of the DX centers in Ga 1− x Al x As JE Dmochowski, JM Langer, J Raczyńska, W Jantsch Physical Review B 38 (5), 3276, 1988 | 62 | 1988 |
| Temperature dependence of the Schottky barrier in Al/AlGaAs metal‐semiconductor junctions P Revva, JM Langer, M Missous, AR Peaker Journal of applied physics 74 (1), 416-425, 1993 | 55 | 1993 |
| Energy transfer between shallow centers and rare-earth ion cores: Er 3+ ion in silicon T Gregorkiewicz, DTX Thao, JM Langer, HHPT Bekman, MS Bresler, ... Physical Review B 61 (8), 5369, 2000 | 47 | 2000 |
| Gallium: a second bistable impurity center in CdF2 JE Dmochowski, W Jantsch, D Dobosz, JM Langer Acta physica Polonica. A 73 (2), 247-249, 1988 | 47 | 1988 |
| Lattice relaxation, radiative and non-radiative deexcitation at localized defects JM Langer Radiation Effects 72 (1-4), 55-72, 1983 | 47 | 1983 |
| Donor gettering in GaAs by rare‐earth elements J Raczyńska, K Fronc, JM Langer, A Lemańska, A Stapor Applied physics letters 53 (9), 761-763, 1988 | 44 | 1988 |
| Optical properties of transition metal impurities in CdSe II. Photoionization spectra JML JM Baranowski physica status solidi (b) 48, 863–873, 1971 | 44 | 1971 |
| Strong lattice relaxation at localized defects JM Langer J. Phys. Soc. Jpn 49, S207-S214, 1980 | 43 | 1980 |
| Energy structure and recombination for ZnS bulk crystals doped with Tb, Er and Eu D Hommel, H Hartmann, M Godlewski, JM Langer, A Stapor Journal of Crystal Growth 72 (1-2), 346-350, 1985 | 39 | 1985 |
| Optical properties of transition metal impurities in CdSe. I. Crystal‐field spectra JM Langer, JM Baranowski physica status solidi (b) 44 (1), 155-166, 1971 | 38 | 1971 |
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