| Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability M Xiao, B Wang, J Liu, R Zhang, Z Zhang, C Ding, S Lu, K Sasaki, GQ Lu, ... IEEE Transactions on Power Electronics 36 (8), 8565-8569, 2021 | 98 | 2021 |
| High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K B Wang, M Xiao, X Yan, HY Wong, J Ma, K Sasaki, H Wang, Y Zhang Applied Physics Letters 115 (26), 2019 | 71 | 2019 |
| 2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension B Wang, M Xiao, J Spencer, Y Qin, K Sasaki, MJ Tadjer, Y Zhang IEEE Electron Device Letters 44 (2), 221-224, 2022 | 69 | 2022 |
| Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ... Journal of physics D: applied physics 56 (9), 093001, 2023 | 48 | 2023 |
| Improvement of TCAD augmented machine learning using autoencoder for semiconductor variation identification and inverse design K Mehta, SS Raju, M Xiao, B Wang, Y Zhang, HY Wong IEEE Access 8, 143519-143529, 2020 | 47 | 2020 |
| TCAD-machine learning framework for device variation and operating temperature analysis with experimental demonstration HY Wong, M Xiao, B Wang, YK Chiu, X Yan, J Ma, K Sasaki, H Wang, ... IEEE Journal of the Electron Devices Society 8, 992-1000, 2020 | 44 | 2020 |
| TCAD-augmented machine learning with and without domain expertise H Dhillon, K Mehta, M Xiao, B Wang, Y Zhang, HY Wong IEEE Transactions on Electron Devices 68 (11), 5498-5503, 2021 | 43 | 2021 |
| Low thermal resistance (0.5 K/W) Ga₂O₃ Schottky rectifiers with double-side packaging B Wang, M Xiao, J Knoll, C Buttay, K Sasaki, GQ Lu, C Dimarino, Y Zhang IEEE Electron Device Letters 42 (8), 1132-1135, 2021 | 39 | 2021 |
| Application of noise to avoid overfitting in TCAD augmented machine learning SS Raju, B Wang, K Mehta, M Xiao, Y Zhang, HY Wong 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 33 | 2020 |
| Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes C Buttay, HY Wong, B Wang, M Xiao, C Dimarino, Y Zhang Microelectronics Reliability 114, 113743, 2020 | 32 | 2020 |
| NiO junction termination extension for high-voltage (> 3 kV) Ga2O3 devices M Xiao, B Wang, J Spencer, Y Qin, M Porter, Y Ma, Y Wang, K Sasaki, ... Applied Physics Letters 122 (18), 2023 | 24 | 2023 |
| Packaging of a 10-kV double-side cooled silicon carbide diode module with thin substrates coated by a nonlinear resistive polymer-nanoparticle composite Z Zhang, S Lu, B Wang, Y Zhang, N Yun, W Sung, KDT Ngo, GQ Lu IEEE Transactions on Power Electronics 37 (12), 14462-14470, 2022 | 24 | 2022 |
| First demonstration of vertical superjunction diode in GaN M Xiao, Y Ma, Z Du, Y Qin, K Liu, K Cheng, F Udrea, A Xie, E Beam, ... 2022 International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2022 | 17 | 2022 |
| Evaluation of 650V, 100A direct-drive GaN power switch for electric vehicle powertrain applications Q Song, JP Kozak, M Xiao, Y Ma, B Wang, R Zhang, R Volkov, K Smith, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 15 | 2021 |
| 1 kV GaN-on-Si quasi-vertical Schottky rectifier Y Qin, M Xiao, R Zhang, Q Xie, T Palacios, B Wang, Y Ma, I Kravchenko, ... IEEE Electron Device Letters 44 (7), 1052-1055, 2023 | 14 | 2023 |
| Chip size minimization for wide and ultrawide bandgap power devices B Wang, M Xiao, Z Zhang, Y Wang, Y Qin, Q Song, GQ Lu, K Ngo, ... IEEE Transactions on Electron Devices 70 (2), 633-639, 2023 | 14 | 2023 |
| Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices Y Ma, Y Qin, M Porter, J Spencer, Z Du, M Xiao, B Wang, Y Wang, ... Advanced Electronic Materials, 2300662, 2023 | 7 | 2023 |
| 2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness Y Qin, M Porter, M Xiao, Z Du, H Zhang, Y Ma, J Spencer, B Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 6 | 2023 |
| Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes A Almalki, L Madani, N Sengouga, S Alhassan, S Alotaibi, A Alhassni, ... Materials Today Electronics 4, 100042, 2023 | 6 | 2023 |
| NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed M Xiao, B Wang, R Zhang, Q Song, J Spencer, Z Du, Y Qin, K Sasaki, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 4 | 2023 |
Yuhao ZhangCPES, Virginia Tech在 vt.edu 的电子邮件经过验证
Yuhao ZhangCPES, Virginia Tech在 vt.edu 的电子邮件经过验证
Ming XiaoXidian University, CPES, Virginia tech在 xidian.edu.cn 的电子邮件经过验证
Yunwei MaPh.D. canditate, Virginia Tech在 vt.edu 的电子邮件经过验证