| Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks J Wei, S Liu, S Li, J Fang, T Li, W Sun IEEE Transactions on Power Electronics 34 (3), 2748-2757, 2018 | 56 | 2018 |
| Investigations on the degradations of double-trench SiC power MOSFETs under repetitive avalanche stress J Wei, S Liu, L Yang, L Tang, R Lou, T Li, J Fang, S Li, C Zhang, W Sun IEEE Transactions on electron devices 66 (1), 546-552, 2018 | 52 | 2018 |
| Comprehensive analysis of electrical parameters degradations for SiC power MOSFETs under repetitive short-circuit stress J Wei, S Liu, L Yang, J Fang, T Li, S Li, W Sun IEEE Transactions on Electron Devices 65 (12), 5440-5447, 2018 | 49 | 2018 |
| Single pulse unclamped-inductive-switching induced failure and analysis for 650 V p-GaN HEMT S Liu, S Li, C Zhang, N Li, X Tao, C Ge, L Qian, S Xin, W Sun IEEE Transactions on Power Electronics 35 (11), 11328-11331, 2020 | 26 | 2020 |
| Comparison investigations on unclamped-inductive-switching behaviors of power GaN switching devices S Li, S Liu, C Zhang, L Qian, S Xin, C Ge, W Sun IEEE Transactions on Industrial Electronics 69 (5), 5041-5049, 2021 | 23 | 2021 |
| Investigation on degradation mechanism and optimization for SiC power MOSFETs under long-term short-circuit stress J Wei, S Liu, J Fang, S Li, T Li, W Sun 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 18 | 2018 |
| High‐temperature electrical performances and physics‐based analysis of p‐GaN HEMT device S Li, S Liu, Y Tian, C Zhang, J Wei, X Tao, N Li, L Zhang, W Sun IET Power Electronics 13 (3), 420-425, 2020 | 14 | 2020 |
| Investigations on electrical parameters degradations of p-GaN HEMTs under repetitive UIS stresses S Li, S Liu, C Zhang, N Li, X Tao, J Wei, L Zhang, W Sun IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (2 …, 2020 | 14 | 2020 |
| Lateral DMOS with partial-resist-implanted drift region for alleviating hot-carrier effect S Liu, S Li, Z Li, W Sun, W Su, S Ma, F Lin, Y Liu, G Sun IEEE Transactions on Device and Materials Reliability 17 (4), 780-784, 2017 | 14 | 2017 |
| Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures J Wei, Z Wei, H Fu, J Cao, T Wu, J Sun, X Zhu, S Li, L Zhang, S Liu, W Sun IEEE Transactions on Power Electronics, 2023 | 13 | 2023 |
| Reliability concern of 650-V normally-OFF GaN devices under reverse freewheeling stress S Li, S Liu, C Zhang, X Tao, N Li, L Qian, C Ge, S Xin, W Sun IEEE Transactions on Electron Devices 67 (8), 3492-3495, 2020 | 13 | 2020 |
| Electrical performances degradations and physics based mechanisms under negative bias temperature instability stress for p-GaN gate high electron mobility transistors C Zhang, S Liu, S Li, N Li, X Tao, B Hou, B Zhou, J Wei, Y Chen, W Sun Semiconductor Science and Technology 36 (1), 014007, 2020 | 11 | 2020 |
| Understanding electrical parameter degradations of P-GaN HEMT under repetitive short-circuit stresses S Li, S Liu, C Zhang, L Qian, C Ge, S Xin, W Sun, Z Yang, Y Zhu, L Ni IEEE Transactions on Power Electronics 36 (11), 12173-12176, 2021 | 10 | 2021 |
| Investigation on the degradation mechanism for GaN cascode device under repetitive hard-switching stress C Zhang, S Liu, S Li, Y Ma, W Lu, J Huang, W Sun, Z Yang, Y Zhu, L Ni IEEE Transactions on Power Electronics 37 (5), 6009-6017, 2021 | 8 | 2021 |
| Extraction method of interfacial injected charges for SiC power MOSFETs J Wei, S Liu, S Li, H Song, X Chen, T Li, J Fang, W Sun Superlattices and microstructures 113, 706-712, 2018 | 8 | 2018 |
| Dynamic characteristics analysis of 1.2 kV SiC VDMOS under high temperature up to 375° C X Chen, S Li, H Song, J Wei, S Liu, W Sun 2017 IEEE 24th International Symposium on the Physical and Failure Analysis …, 2017 | 8 | 2017 |
| Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs S Li, Y Ma, C Zhang, W Lu, M Liu, M Li, L Yang, S Liu, J Wei, L Zhang, ... IEEE Transactions on Power Electronics, 2023 | 7 | 2023 |
| Hybrid Gate p-GaN Power HEMTs Technology for Enhanced Vth Stability C Zhang, S Li, S Liu, W Lu, Y Ma, J Wei, L Zhang, W Sun, D Wang, J Zhou, ... 2022 International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2022 | 6 | 2022 |
| A silicon-on-insulator lateral IGBT with segmented trenches for improving short-circuit withstanding capability L Zhang, J Ma, M Luo, W Cui, P Liu, S Liu, J Wei, S Li, W Sun, N He, ... IEEE Transactions on Electron Devices 69 (7), 4042-4045, 2022 | 6 | 2022 |
| Electrical degradations of P-GaN HEMT under high off-state bias stress with negative gate voltage C Zhang, S Li, S Liu, J Wei, W Wu, W Sun 2019 IEEE 26th International Symposium on Physical and Failure Analysis of …, 2019 | 6 | 2019 |
