| Simple statistical channel model for weak temperature-induced turbulence in underwater wireless optical communication systems HM Oubei, E Zedini, RT ElAfandy, A Kammoun, M Abdallah, TK Ng, ... Optics Letters 42 (13), 2455-2458, 2017 | 146 | 2017 |
| Performance evaluation of underwater wireless optical communications links in the presence of different air bubble populations HM Oubei, RT ElAfandy, KH Park, TK Ng, MS Alouini, BS Ooi IEEE Photonics Journal 9 (2), 1-9, 2017 | 124 | 2017 |
| Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics C Zhao, TK Ng, RT ElAfandy, A Prabaswara, GB Consiglio, IA Ajia, ... Nano letters 16 (7), 4616-4623, 2016 | 122 | 2016 |
| Distributed Bragg reflectors for GaN-based vertical-cavity surface-emitting lasers C Zhang, R ElAfandy, J Han Applied Sciences 9 (8), 1593, 2019 | 76 | 2019 |
| Efficient Weibull channel model for salinity induced turbulent underwater wireless optical communications HM Oubei, E Zedini, RT ElAfandy, A Kammoun, TK Ng, MS Alouini, ... 2017 Opto-Electronics and Communications Conference (OECC) and Photonics …, 2017 | 64 | 2017 |
| On the phenomenon of large photoluminescence red shift in GaN nanoparticles AB Slimane, A Najar, R Elafandy, DP San-Román-Alerigi, D Anjum, ... Nanoscale research letters 8, 1-6, 2013 | 49 | 2013 |
| Room-temperature operation of c-plane GaN vertical cavity surface emitting laser on conductive nanoporous distributed Bragg reflector RT ElAfandy, JH Kang, B Li, TK Kim, JS Kwak, J Han Applied Physics Letters 117 (1), 2020 | 48 | 2020 |
| Exfoliation of Threading Dislocation‐Free, Single‐Crystalline, Ultrathin Gallium Nitride Nanomembranes RT ElAfandy, MA Majid, TK Ng, L Zhao, D Cha, BS Ooi Advanced Functional Materials 24 (16), 2305-2311, 2014 | 45 | 2014 |
| Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer D Priante, B Janjua, A Prabaswara, RC Subedi, RT Elafandy, S Lopatin, ... Optical Materials Express 7 (12), 4214-4224, 2017 | 33 | 2017 |
| True yellow light-emitting diodes as phosphor for tunable color-rendering index laser-based white light B Janjua, TK Ng, C Zhao, A Prabaswara, GB Consiglio, D Priante, C Shen, ... Acs Photonics 3 (11), 2089-2095, 2016 | 33 | 2016 |
| Study and application of birefringent nanoporous GaN in the polarization control of blue vertical-cavity surface-emitting lasers RT Elafandy, JH Kang, C Mi, TK Kim, JS Kwak, J Han ACS Photonics 8 (4), 1041-1047, 2021 | 29 | 2021 |
| Nanomembrane‐Based, Thermal‐Transport Biosensor for Living Cells RT ElAfandy, AF AbuElela, P Mishra, B Janjua, HM Oubei, U Büttner, ... Small 13 (7), 1603080, 2017 | 28 | 2017 |
| Thermal transport of nanoporous gallium nitride for photonic applications T Zhou, C Zhang, R ElAfandy, G Yuan, Z Deng, K Xiong, FM Chen, ... Journal of Applied Physics 125 (15), 2019 | 26 | 2019 |
| Twofold Porosity and Surface Functionalization Effect on Pt–Porous GaN for High-Performance H2-Gas Sensors at Room Temperature M Shafa, D Priante, RT ElAfandy, MN Hedhili, ST Mahmoud, TK Ng, ... ACS omega 4 (1), 1678-1684, 2019 | 21 | 2019 |
| Flexible InGaN nanowire membranes for enhanced solar water splitting RT ElAfandy, M Ebaid, JW Min, C Zhao, TK Ng, BS Ooi Optics express 26 (14), A640-A650, 2018 | 18 | 2018 |
| On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy P Mishra, B Janjua, TK Ng, DH Anjum, RT Elafandy, A Prabaswara, ... Optical Materials Express 6 (6), 2052-2062, 2016 | 18 | 2016 |
| Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires D Priante, RT Elafandy, A Prabaswara, B Janjua, C Zhao, MS Alias, ... Journal of Applied Physics 124 (1), 2018 | 17 | 2018 |
| Optical properties of freestanding GaN nanomembranes using monochromated valence-EELS M Benaissa, W Sigle, I Benabdallah, RT Elafandy, TK Ng, PA Van Aken Materials Science and Engineering: B 272, 115333, 2021 | 11 | 2021 |
| Development of nanopore-based near ultraviolet vertical-cavity surface emitting lasers C Zhang, RT ElAfandy, J Zhang, S Chen, A Nurmikko, J Han Gallium Nitride Materials and Devices XIV 10918, 138-148, 2019 | 11 | 2019 |
| First demonstration of orange-yellow light emitter devices in InGaP/InAlGaP laser structure using strain-induced quantum well intermixing technique MA Majid, AA Al-Jabr, RT Elafandy, HM Oubei, MS Alias, BA Alnahhas, ... Novel In-Plane Semiconductor Lasers XV 9767, 37-44, 2016 | 11 | 2016 |
Tien Khee NgPrincipal Scientist, KAUST; Fellow of IET, Fellow of IOP在 kaust.edu.sa 的电子邮件经过验证
