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Kuleen Kumar
Kuleen Kumar
IIT Guwahati, NIT Mizoram
在 nitmz.ac.in 的电子邮件经过验证
标题
引用次数
引用次数
年份
Estimation and analysis for modelling of stand-alone graphene/AlGaAs/GaAs schottky solar photovoltaic cell module for power conversion efficiency
S Hungyo, RS Dhar, K Kumar, KJ Singh, R Dey, S Bhattacharya
Microsystem Technologies 27 (10), 3693-3701, 2021
132021
Performance analysis and development of strain induced quantum well based nano-system device technology
K Kumar, RS Dhar, S Bhattacharya, R Dey
Microsystem Technologies 27 (10), 3703-3710, 2021
112021
Exploration of improved leakage based performance analysis for underlap induced strained-Si layer in tri-layered channel DG nanoFETs
K Kumar, RS Dhar
Physica Scripta 96 (12), 124006, 2021
92021
Design of DG MOSFET with tri-layered strained silicon channel
K Kumar, L Khiangte, RS Dhar
Journal of Physics: Conference Series 1478 (1), 012002, 2020
72020
Modelling and Implementation of Double Gate n-channel FET with Strain Engineered Tri-Layered Channel System for Enriched Drain Current
K Kuleen, SD Rudra, N Swagat
Sumy State University, 2022
22022
Development of 14nm Tri-layered (s-Si/s-SiGe/s-Si) Channel DG-NanoFET
K Kumar, RS Dhar
2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 1-4, 2020
22020
Modelling and Simulation of 10nm Strained Channel DG-Nano-FET
K Kumar, RS Dhar
2020 7th International Conference on Signal Processing and Integrated …, 2020
22020
State-of-the-art MOSFET and TCAD in the advancement of technology: A review
L Khiangte, RS Dhar, K Kumar, JL Pachuau
Mizoram Science Congress 2018 (MSC 2018), 37-41, 2018
22018
TCAD Modeling and Analysis of sub-30nm Strained Channel MOSFET
L Khiangte, K Kumar, RS Dhar
International Conference on Intelligent Computing and Smart Communication …, 2020
12020
Strain engineering analysis for nanoscaled tri-layered heterostructure-on-insulator
RS Dhar, L Khiangte, K Kumar
International Journal of Nanoscience, 2019
12019
Design and analysis of tri-layered strained channel HOI CGAA FET
R Barik, K Kumar, RS Dhar
International Journal of Nanoparticles 14 (2-4), 138-146, 2022
2022
Physics and Modelling of Tri-Layered Strained Channel for Development of Double Gate n-channel FET
K Kumar, RS Dhar
2021
Development and Characterization of Nano Material Membrane Device for Enhanced Transmittance
S Talukdar, RS Dhar, K Kumar
2021 International Conference on Advances in Electrical, Computing …, 2021
2021
Design of 2-Bit Parallel Asynchronous Self-timed Adder and 2-Bit Parallel Adder Using Radix Adder
K Kumar, T Sharma
International Conference on Intelligent Computing and Applications, 197-205, 2018
2018
Design and Analysis of Tri-Layered Strained Channel HOI DG FET at 14nm
K Kumar, RS Dhar
Nanoscience and Technology: An International Journal, 0
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