Estimation and analysis for modelling of stand-alone graphene/AlGaAs/GaAs schottky solar photovoltaic cell module for power conversion efficiency S Hungyo, RS Dhar, K Kumar, KJ Singh, R Dey, S Bhattacharya Microsystem Technologies 27 (10), 3693-3701, 2021 | 13 | 2021 |
Performance analysis and development of strain induced quantum well based nano-system device technology K Kumar, RS Dhar, S Bhattacharya, R Dey Microsystem Technologies 27 (10), 3703-3710, 2021 | 11 | 2021 |
Exploration of improved leakage based performance analysis for underlap induced strained-Si layer in tri-layered channel DG nanoFETs K Kumar, RS Dhar Physica Scripta 96 (12), 124006, 2021 | 9 | 2021 |
Design of DG MOSFET with tri-layered strained silicon channel K Kumar, L Khiangte, RS Dhar Journal of Physics: Conference Series 1478 (1), 012002, 2020 | 7 | 2020 |
Modelling and Implementation of Double Gate n-channel FET with Strain Engineered Tri-Layered Channel System for Enriched Drain Current K Kuleen, SD Rudra, N Swagat Sumy State University, 2022 | 2 | 2022 |
Development of 14nm Tri-layered (s-Si/s-SiGe/s-Si) Channel DG-NanoFET K Kumar, RS Dhar 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 1-4, 2020 | 2 | 2020 |
Modelling and Simulation of 10nm Strained Channel DG-Nano-FET K Kumar, RS Dhar 2020 7th International Conference on Signal Processing and Integrated …, 2020 | 2 | 2020 |
State-of-the-art MOSFET and TCAD in the advancement of technology: A review L Khiangte, RS Dhar, K Kumar, JL Pachuau Mizoram Science Congress 2018 (MSC 2018), 37-41, 2018 | 2 | 2018 |
TCAD Modeling and Analysis of sub-30nm Strained Channel MOSFET L Khiangte, K Kumar, RS Dhar International Conference on Intelligent Computing and Smart Communication …, 2020 | 1 | 2020 |
Strain engineering analysis for nanoscaled tri-layered heterostructure-on-insulator RS Dhar, L Khiangte, K Kumar International Journal of Nanoscience, 2019 | 1 | 2019 |
Design and analysis of tri-layered strained channel HOI CGAA FET R Barik, K Kumar, RS Dhar International Journal of Nanoparticles 14 (2-4), 138-146, 2022 | | 2022 |
Physics and Modelling of Tri-Layered Strained Channel for Development of Double Gate n-channel FET K Kumar, RS Dhar | | 2021 |
Development and Characterization of Nano Material Membrane Device for Enhanced Transmittance S Talukdar, RS Dhar, K Kumar 2021 International Conference on Advances in Electrical, Computing …, 2021 | | 2021 |
Design of 2-Bit Parallel Asynchronous Self-timed Adder and 2-Bit Parallel Adder Using Radix Adder K Kumar, T Sharma International Conference on Intelligent Computing and Applications, 197-205, 2018 | | 2018 |
Design and Analysis of Tri-Layered Strained Channel HOI DG FET at 14nm K Kumar, RS Dhar Nanoscience and Technology: An International Journal, 0 | | |