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Salvatore Race
Salvatore Race
R&D BiMOS engineer, Hitachi Energy
在 hitachienergy.com 的电子邮件经过验证
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引用次数
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年份
Circuit-based electrothermal modeling of SiC power modules with nonlinear thermal models
S Race, A Philipp, M Nagel, T Ziemann, I Kovacevic-Badstuebner, ...
IEEE transactions on power electronics 37 (7), 7965-7976, 2022
242022
Thermal resistance advanced calculator (TRAC)
L Codecasa, S Race, V d'Alessandro, D Gualandris, A Morelli, CM Villa
2018 24rd International Workshop on Thermal Investigations of ICs and …, 2018
142018
Design for reliability of SiC multichip power modules: The effect of variability
S Race, T Ziemann, I Kovacevic-Badstuebner, R Stark, S Tiwari, ...
2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021
122021
Accuracy of thermal analysis for SiC power devices
S Race, T Ziemann, S Tiwari, I Kovacevic-Badstuebner, U Grossner
2021 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2021
112021
TRAC: A thermal resistance advanced calculator for electronic packages
L Codecasa, S Race, V d’Alessandro, D Gualandris, A Morelli, CM Villa
Energies 12 (6), 1050, 2019
112019
Thermal resistance and impedance calculator (TRIC)
L Codecasa, F De Viti, S Race, V d’Alessandro, D Gualandris, A Morelli, ...
2019 25th International Workshop on Thermal Investigations of ICs and …, 2019
102019
Power cycling reliability of SiC MOSFETs in discrete and module packages
I Kovacevic-Badstuebner, S Race, T Ziemann, S Tiwari, U Grossner, ...
2022 IEEE International Reliability Physics Symposium (IRPS), 10C. 3-1-10C. 3-6, 2022
72022
High-energy proton and atmospheric-neutron irradiations of SiC power MOSFETs: SEB study and impact on channel and drift resistances
C Martinella, S Race, R Stark, RG Alia, A Javanainen, U Grossner
IEEE Transactions on Nuclear Science 70 (8), 1844-1851, 2023
52023
Towards digital twins for the optimization of power electronic switching cells with discrete SiC power MOSFETs
S Race, M Nagel, I Kovacevic-Badstuebner, T Ziemann, U Grossner
PCIM Europe 2022; International Exhibition and Conference for Power …, 2022
52022
Virtual PCB layout prototyping: Importance of modeling gate driver and parasitic capacitances
M Nagel, S Race, I Kovacevic-Badstuebner, T Ziemann, U Grossner
2022 IEEE Design Methodologies Conference (DMC), 1-5, 2022
42022
Modeling approach for design selection and reliability analysis of SiC power modules
I Kovacevic-Badstuebner, S Race, U Grossner
2022 IEEE International Workshop on Integrated Power Packaging (IWIPP), 1-5, 2022
32022
Thermal analysis of SiC power semiconductor packages using the structure function
S Race, I Kovacevic-Badstuebner, M Nagel, T Ziemann, S Tiwari, ...
2021 27th International Workshop on Thermal Investigations of ICs and …, 2021
32021
Small-signal impedance and split CV characterization of high-κ SiC power MOSFETs
S Race, I Kovacevic-Badstubner, R Stark, A Tsibizov, M Belanche, ...
Materials Science Forum 1091, 67-71, 2023
22023
Extended analysis of power cycling behavior of TO-packaged SiC power MOSFETs
I Kovacevic-Badstuebner, S Race, U Grossner, E Mengotti, C Kenel, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
22023
3-D electrothermal modeling of SiC multichip power modules for a more accurate reliability assessment
S Race, R Stark, I Kovacevic-Badstuebner, M Nagel, T Ziemann, ...
CIPS 2022; 12th International Conference on Integrated Power Electronics …, 2022
22022
Exploring the border traps near the SiO2-SiC interface using conductance measurements
P Kumar, M Krummenacher, HG Medeiros, S Race, P Natzke, ...
2024 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2024
12024
Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses
S Bonaldo, C Martinella, S Race, N Für, S Mattiazzo, M Bagatin, ...
IEEE Transactions on Nuclear Science, 2024
12024
Power Cycling of Sintered SiC Power MOSFET Baseplate-less Modules with Aluminum Oxide and Silicon Nitride Substrates
I Kovacevic-Badstuebner, E Mengotti, P Natzke, S Race, E Bianda, ...
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
12023
Gate Impedance Analysis of SiC power MOSFETs with SiO2 and High-k Dielectric
S Race, P Kumar, P Natzke, I Kovacevic-Badstuebner, ME Bathen, ...
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
12023
Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique
C Dorfer, ME Bathen, S Race, P Kumar, A Tsibizov, J Woerle, U Grossner
Applied Physics Letters 122 (18), 2023
12023
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